JPS6367332B2 - - Google Patents
Info
- Publication number
- JPS6367332B2 JPS6367332B2 JP1898681A JP1898681A JPS6367332B2 JP S6367332 B2 JPS6367332 B2 JP S6367332B2 JP 1898681 A JP1898681 A JP 1898681A JP 1898681 A JP1898681 A JP 1898681A JP S6367332 B2 JPS6367332 B2 JP S6367332B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- sample
- chamber
- magnetic
- plasma generation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000008021 deposition Effects 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 16
- 238000000605 extraction Methods 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 10
- 230000007246 mechanism Effects 0.000 claims description 9
- 230000035699 permeability Effects 0.000 claims description 9
- 238000009826 distribution Methods 0.000 claims description 6
- 230000004907 flux Effects 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 33
- 239000000758 substrate Substances 0.000 description 17
- 238000005755 formation reaction Methods 0.000 description 15
- 238000000151 deposition Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000009471 action Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000005686 electrostatic field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1898681A JPS57133636A (en) | 1981-02-13 | 1981-02-13 | Film forming device utilizing plasma at low temperature |
| CA000375908A CA1159012A (en) | 1980-05-02 | 1981-04-22 | Plasma deposition apparatus |
| US06/257,616 US4401054A (en) | 1980-05-02 | 1981-04-27 | Plasma deposition apparatus |
| FR8108726A FR2481838A1 (fr) | 1980-05-02 | 1981-04-30 | Appareil de depot de plasma pour former une pellicule sur un substrat |
| DE3117252A DE3117252C2 (de) | 1980-05-02 | 1981-04-30 | Plasmaauftragvorrichtung |
| NL8102172A NL191267C (nl) | 1980-05-02 | 1981-05-01 | Inrichting voor het met plasma bewerken van een substraat. |
| GB8113505A GB2076587B (en) | 1980-05-02 | 1981-05-01 | Plasma deposition apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1898681A JPS57133636A (en) | 1981-02-13 | 1981-02-13 | Film forming device utilizing plasma at low temperature |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57133636A JPS57133636A (en) | 1982-08-18 |
| JPS6367332B2 true JPS6367332B2 (enrdf_load_stackoverflow) | 1988-12-26 |
Family
ID=11986903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1898681A Granted JPS57133636A (en) | 1980-05-02 | 1981-02-13 | Film forming device utilizing plasma at low temperature |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57133636A (enrdf_load_stackoverflow) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60115235A (ja) * | 1983-11-26 | 1985-06-21 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体基板上への絶縁膜形成方法 |
| JPS60116781A (ja) * | 1983-11-28 | 1985-06-24 | Kyocera Corp | 高硬度窒化ホウ素膜の製造方法 |
| JPS60116780A (ja) * | 1983-11-28 | 1985-06-24 | Kyocera Corp | 高硬度窒化ホウ素膜の製造方法 |
| JPH0638401B2 (ja) * | 1984-08-13 | 1994-05-18 | 日本電信電話株式会社 | 半導体薄膜形成法 |
| JPH0616496B2 (ja) * | 1986-09-24 | 1994-03-02 | 日本電気株式会社 | 励起種ｃｖｄ装置 |
| JPH066786B2 (ja) * | 1987-03-17 | 1994-01-26 | 日本電信電話株式会社 | 薄膜形成装置 |
| JPS6455871A (en) * | 1987-08-26 | 1989-03-02 | Sumitomo Electric Industries | Manufacture of self-alignment type gate electrode |
| JPH01198478A (ja) * | 1988-02-01 | 1989-08-10 | Canon Inc | マイクロ波プラズマｃｖｄ装置 |
| EP0406690B1 (en) * | 1989-06-28 | 1997-03-12 | Canon Kabushiki Kaisha | Process for continuously forming a large area functional deposited film by microwave PCVD method and an apparatus suitable for practicing the same |
| JP2714247B2 (ja) * | 1990-10-29 | 1998-02-16 | キヤノン株式会社 | マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する方法及び装置 |
| JP2824808B2 (ja) * | 1990-11-16 | 1998-11-18 | キヤノン株式会社 | マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する装置 |
| US5629054A (en) * | 1990-11-20 | 1997-05-13 | Canon Kabushiki Kaisha | Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method |
| JP2810532B2 (ja) * | 1990-11-29 | 1998-10-15 | キヤノン株式会社 | 堆積膜形成方法及び堆積膜形成装置 |
| JP3101330B2 (ja) * | 1991-01-23 | 2000-10-23 | キヤノン株式会社 | マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する方法及び装置 |
| US6096389A (en) * | 1995-09-14 | 2000-08-01 | Canon Kabushiki Kaisha | Method and apparatus for forming a deposited film using a microwave CVD process |
| US10431429B2 (en) * | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
| JP6795143B2 (ja) * | 2018-06-14 | 2020-12-02 | 株式会社エスイー | 原料をマイクロ波表面波プラズマで処理して原料と異なる生成物を得る製造装置及び製造方法 |
| JP6963848B2 (ja) * | 2018-06-14 | 2021-11-10 | 株式会社エスイー | 原料をマイクロ波表面波プラズマで処理して原料と異なる生成物を得る製造装置及び製造方法 |
-
1981
- 1981-02-13 JP JP1898681A patent/JPS57133636A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57133636A (en) | 1982-08-18 |
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