JPS57128943A - Insulation isolated semiconductor integrated device and manufacture thereof - Google Patents

Insulation isolated semiconductor integrated device and manufacture thereof

Info

Publication number
JPS57128943A
JPS57128943A JP56014094A JP1409481A JPS57128943A JP S57128943 A JPS57128943 A JP S57128943A JP 56014094 A JP56014094 A JP 56014094A JP 1409481 A JP1409481 A JP 1409481A JP S57128943 A JPS57128943 A JP S57128943A
Authority
JP
Japan
Prior art keywords
layer
region
pattern
substrate
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56014094A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6155253B2 (enrdf_load_stackoverflow
Inventor
Akinobu Satou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI
Original Assignee
JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI filed Critical JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI
Priority to JP56014094A priority Critical patent/JPS57128943A/ja
Publication of JPS57128943A publication Critical patent/JPS57128943A/ja
Publication of JPS6155253B2 publication Critical patent/JPS6155253B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/7627—Vertical isolation by full isolation by porous oxide silicon, i.e. FIPOS techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76281—Lateral isolation by selective oxidation of silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP56014094A 1981-02-02 1981-02-02 Insulation isolated semiconductor integrated device and manufacture thereof Granted JPS57128943A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56014094A JPS57128943A (en) 1981-02-02 1981-02-02 Insulation isolated semiconductor integrated device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56014094A JPS57128943A (en) 1981-02-02 1981-02-02 Insulation isolated semiconductor integrated device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57128943A true JPS57128943A (en) 1982-08-10
JPS6155253B2 JPS6155253B2 (enrdf_load_stackoverflow) 1986-11-27

Family

ID=11851515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56014094A Granted JPS57128943A (en) 1981-02-02 1981-02-02 Insulation isolated semiconductor integrated device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57128943A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59175744A (ja) * 1983-03-25 1984-10-04 Fujitsu Ltd 半導体装置及びその製造方法
JPH05166919A (ja) * 1991-12-18 1993-07-02 Mitsubishi Electric Corp 半導体装置及びその製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE40362E1 (en) 1987-04-23 2008-06-10 Polymer Group, Inc. Apparatus and method for hydroenhancing fabric
US12020830B2 (en) 2018-09-28 2024-06-25 Furukawa Electric Co., Ltd. Insulation-coated compound superconducting wire and rewinding method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59175744A (ja) * 1983-03-25 1984-10-04 Fujitsu Ltd 半導体装置及びその製造方法
JPH05166919A (ja) * 1991-12-18 1993-07-02 Mitsubishi Electric Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPS6155253B2 (enrdf_load_stackoverflow) 1986-11-27

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