JPS57184219A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57184219A JPS57184219A JP6985981A JP6985981A JPS57184219A JP S57184219 A JPS57184219 A JP S57184219A JP 6985981 A JP6985981 A JP 6985981A JP 6985981 A JP6985981 A JP 6985981A JP S57184219 A JPS57184219 A JP S57184219A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layer
- contact window
- shaped
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 239000007772 electrode material Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To form the side surface of a contact window in gentle inclined plane- shaped form, and to prevent disconnection by shaping an electrode material layer or an insulator layer to the side surface of the contact window without being accompanied by treatment at a high temperature. CONSTITUTION:Field oxide films 24 are formed to the surface of a P<-> type Si substrate 21, the contact window section is shaped, an oxide film is molded onto the substrate 21 at the same time as a gate oxide film 26, and a PSG film 29 having the phosphorus of low concentration is further formed. The contact window 33 is shaped, an N<+> type region 31 formed at the same time as source- drain regions 30a, 30b is exposed, and a polycrystal Si layer 34 is molded through a CVD method. Polycrystal Si layers 34c coated to the side surfaces of the contact window 33 in inclined plane-shaped form are left and formed through the etching of the whole surface, and the Al electrode layer 36 is shaped onto the layers 34c. The Al layer 36 is sintered into the P<-> type Si substrate 21 while penetrating the N<+> type layer 31 through heating treatment, and a substrate electrode 36 connecting to the substrate 21 in ohmic shape is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6985981A JPS57184219A (en) | 1981-05-08 | 1981-05-08 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6985981A JPS57184219A (en) | 1981-05-08 | 1981-05-08 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57184219A true JPS57184219A (en) | 1982-11-12 |
Family
ID=13414948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6985981A Pending JPS57184219A (en) | 1981-05-08 | 1981-05-08 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57184219A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5444474A (en) * | 1977-09-14 | 1979-04-07 | Matsushita Electric Ind Co Ltd | Contact forming method of semiconductor device |
-
1981
- 1981-05-08 JP JP6985981A patent/JPS57184219A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5444474A (en) * | 1977-09-14 | 1979-04-07 | Matsushita Electric Ind Co Ltd | Contact forming method of semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0052989A3 (en) | Method of fabricating a semiconductor device | |
| JPS64768A (en) | Manufacture of semiconductor element | |
| JPS57184219A (en) | Manufacture of semiconductor device | |
| JPS55157241A (en) | Manufacture of semiconductor device | |
| JPS5713760A (en) | Semiconductor device and manufacture thereof | |
| JPS5568651A (en) | Manufacturing method of semiconductor device | |
| JPS57196542A (en) | Semiconductor integrated circuit device and manufacture thereof | |
| JPS57128943A (en) | Insulation isolated semiconductor integrated device and manufacture thereof | |
| JPS57194583A (en) | Mos semiconductor device and manufacture thereof | |
| JPS57169267A (en) | Semiconductor device and manufacture thereof | |
| JPS56138951A (en) | Manufacture of semiconductor memory device | |
| JPS61267368A (en) | Manufacture of misfet | |
| JPS5717174A (en) | Semiconductor device | |
| JPS57167653A (en) | Manufacture of semiconductor device | |
| JPS5550661A (en) | Insulated gate type field effect semiconductor device | |
| JPS57184248A (en) | Manufacture of semiconductor device | |
| JPS6465875A (en) | Thin film transistor and manufacture thereof | |
| JPS57180165A (en) | Semiconductor device and manufacture thereof | |
| JPS57207375A (en) | Manufacture of semiconductor device | |
| JPS5490978A (en) | Manufacture for mos type semiconductor device | |
| JPS57141968A (en) | Insulated gate type field effect transistor | |
| JPS57167660A (en) | Forming method for high-melting point metallic silicide layer | |
| JPS57114274A (en) | Electrode for semiconductor device and manufacture thereof | |
| JPS57153462A (en) | Manufacture of semiconductor integrated circuit device | |
| JPS57204145A (en) | Manufacture of semiconductor device |