JPS57128086A - Magneto-electric transducer element - Google Patents

Abstract

PURPOSE:To improve the characteristics of an element by a method wherein a distance larger than generally accepted is provided between each of current electrodes and voltage electrodes and the substrate periphery so that dicing caused crush may not affect the dynamic layer and electric field concentration containing the electrodes. CONSTITUTION:A cross shaped GaAs dynamic layer 22 is formed by the epitaxial growth technique at the central part of a square (100) GaAs substrate 21. On the layer 22, current electrodes 23, 24 are provided at the two extremes of the power transmitting segment (a) and voltage electrodes 25, 26 are provided at the two extremes of the output transmitting segment (b). The dicing lines 21a-21d along the four external sides of the square substrate 21 form an angle of 45 deg. with the directions (x) and (y) of the cleavage surfaces and the chip generation widths along the cleavage surface directions (x) and (y) are to be roughly equal with each other. A distance of not less than 10mum is to be provided between each of the current electrodes 23, 24 and voltage electrodes 25, 26, and the periphery of the substrate 21. This setup prevents dicing caused crush from affecting the dynamic layer 22 and the center of electric field concentration where the current electrodes 23, 24 and voltage electrodes 25, 26 are located, improving device characteristics and reliability.