JPS6461958A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6461958A JPS6461958A JP62219827A JP21982787A JPS6461958A JP S6461958 A JPS6461958 A JP S6461958A JP 62219827 A JP62219827 A JP 62219827A JP 21982787 A JP21982787 A JP 21982787A JP S6461958 A JPS6461958 A JP S6461958A
- Authority
- JP
- Japan
- Prior art keywords
- type
- substrate
- gaas layer
- electrode
- type gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/1012—Auxiliary members for bump connectors, e.g. spacers
- H01L2224/10122—Auxiliary members for bump connectors, e.g. spacers being formed on the semiconductor or solid-state body to be connected
- H01L2224/10125—Reinforcing structures
- H01L2224/10126—Bump collar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10329—Gallium arsenide [GaAs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To prevent any cracks from occurring upon welding of an interconnector to a bus electrode, by providing a bonding paste part electrically insulated, to which external wirings of surface electrodes are connected, on an Si substrate. CONSTITUTION:An n-type Si substrate 1 includes an n-type GaAs layer 2, a p-type GaAs layer 3, and an antireflection film 4 formed thereon, all those elements constituting a GaAs solar cell 51. The substrate 1 further includes a bus electrode (bonding pad part) 5b of a p-type electrode 5 provided thereon via an insulating layer 8. Connection between a grid electrode 5a disposed on the p-type GaAs layer 3 and the bus electrode 5b disposed on the n-type Si substrate 1 is assured by providing part of the grid electrode 5a on the n-type Si substrate 1. Thereupon, an insulating layer 8 electrically isolates the grid electrode 5a from an pn junction 7. Consequently no direct stress is applied on the p-type GaAs layer 3 upon welding of an interconnector 12, thereby preventing any crack from being produced in the p-type GaAs layer 3.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62219827A JPS6461958A (en) | 1987-09-02 | 1987-09-02 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62219827A JPS6461958A (en) | 1987-09-02 | 1987-09-02 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6461958A true JPS6461958A (en) | 1989-03-08 |
Family
ID=16741664
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62219827A Pending JPS6461958A (en) | 1987-09-02 | 1987-09-02 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6461958A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03250673A (en) * | 1990-02-27 | 1991-11-08 | Mitsubishi Electric Corp | Compound semiconductor photoelectric conversion element on si substrate |
JPH03283474A (en) * | 1990-03-29 | 1991-12-13 | Mitsubishi Electric Corp | Compound semiconductor photoelectric conversion element of si substrate |
US5145793A (en) * | 1990-04-13 | 1992-09-08 | Mitsubishi Denki Kabushiki Kaisha | Manufacturing a gallium arsenide solar cell on a silicon substrate |
US6882761B2 (en) | 2001-01-22 | 2005-04-19 | The Furukawa Electric Co., Ltd. | Silicon platform for optical modules |
US8728880B2 (en) | 2010-12-17 | 2014-05-20 | Samsung Electronics Co., Ltd. | Graphene electronic device and method of fabricating the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS531484A (en) * | 1976-06-28 | 1978-01-09 | Seiko Epson Corp | Solar cell for watches |
JPS622268B2 (en) * | 1976-02-13 | 1987-01-19 | Staalkat Bv | |
JPS63156372A (en) * | 1986-12-19 | 1988-06-29 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
-
1987
- 1987-09-02 JP JP62219827A patent/JPS6461958A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS622268B2 (en) * | 1976-02-13 | 1987-01-19 | Staalkat Bv | |
JPS531484A (en) * | 1976-06-28 | 1978-01-09 | Seiko Epson Corp | Solar cell for watches |
JPS63156372A (en) * | 1986-12-19 | 1988-06-29 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03250673A (en) * | 1990-02-27 | 1991-11-08 | Mitsubishi Electric Corp | Compound semiconductor photoelectric conversion element on si substrate |
JPH03283474A (en) * | 1990-03-29 | 1991-12-13 | Mitsubishi Electric Corp | Compound semiconductor photoelectric conversion element of si substrate |
US5145793A (en) * | 1990-04-13 | 1992-09-08 | Mitsubishi Denki Kabushiki Kaisha | Manufacturing a gallium arsenide solar cell on a silicon substrate |
US6882761B2 (en) | 2001-01-22 | 2005-04-19 | The Furukawa Electric Co., Ltd. | Silicon platform for optical modules |
US8728880B2 (en) | 2010-12-17 | 2014-05-20 | Samsung Electronics Co., Ltd. | Graphene electronic device and method of fabricating the same |
US9257528B2 (en) | 2010-12-17 | 2016-02-09 | Samsung Electronics Co., Ltd. | Graphene electronic device and method of fabricating the same |
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