JPS57128024A - Single crystallization for non-single crystalline semiconductor layer - Google Patents

Single crystallization for non-single crystalline semiconductor layer

Info

Publication number
JPS57128024A
JPS57128024A JP1254981A JP1254981A JPS57128024A JP S57128024 A JPS57128024 A JP S57128024A JP 1254981 A JP1254981 A JP 1254981A JP 1254981 A JP1254981 A JP 1254981A JP S57128024 A JPS57128024 A JP S57128024A
Authority
JP
Japan
Prior art keywords
scanned
scanning
region
crystal
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1254981A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6329819B2 (enExample
Inventor
Junji Sakurai
Haruhisa Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1254981A priority Critical patent/JPS57128024A/ja
Publication of JPS57128024A publication Critical patent/JPS57128024A/ja
Publication of JPS6329819B2 publication Critical patent/JPS6329819B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)
JP1254981A 1981-01-30 1981-01-30 Single crystallization for non-single crystalline semiconductor layer Granted JPS57128024A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1254981A JPS57128024A (en) 1981-01-30 1981-01-30 Single crystallization for non-single crystalline semiconductor layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1254981A JPS57128024A (en) 1981-01-30 1981-01-30 Single crystallization for non-single crystalline semiconductor layer

Publications (2)

Publication Number Publication Date
JPS57128024A true JPS57128024A (en) 1982-08-09
JPS6329819B2 JPS6329819B2 (enExample) 1988-06-15

Family

ID=11808407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1254981A Granted JPS57128024A (en) 1981-01-30 1981-01-30 Single crystallization for non-single crystalline semiconductor layer

Country Status (1)

Country Link
JP (1) JPS57128024A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119824A (ja) * 1982-12-27 1984-07-11 Fujitsu Ltd 半導体装置の製造方法
JPS59224121A (ja) * 1983-06-03 1984-12-17 Agency Of Ind Science & Technol レ−ザアニ−リング装置
JPS6076117A (ja) * 1983-09-30 1985-04-30 Sony Corp 半導体薄膜の結晶化方法
JPS60126840A (ja) * 1983-12-13 1985-07-06 Matsushita Electric Ind Co Ltd Ｓｏｉ形成用レーザ照射方法
JPS60189216A (ja) * 1984-03-08 1985-09-26 Agency Of Ind Science & Technol レ−ザアニ−リング装置
JPS62145718A (ja) * 1985-12-20 1987-06-29 Agency Of Ind Science & Technol 半導体単結晶層の製造方法
JPS62216318A (ja) * 1986-03-18 1987-09-22 Fujitsu Ltd レ−ザアニ−ル装置
JPH01246829A (ja) * 1988-03-28 1989-10-02 Tokyo Electron Ltd ビームアニール装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02128314U (enExample) * 1989-03-29 1990-10-23

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52115681A (en) * 1975-12-10 1977-09-28 Shii Shii Fuan Jiyon Method of improving crystallinity of semiconductor coating by scanning laser beam

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52115681A (en) * 1975-12-10 1977-09-28 Shii Shii Fuan Jiyon Method of improving crystallinity of semiconductor coating by scanning laser beam

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119824A (ja) * 1982-12-27 1984-07-11 Fujitsu Ltd 半導体装置の製造方法
JPS59224121A (ja) * 1983-06-03 1984-12-17 Agency Of Ind Science & Technol レ−ザアニ−リング装置
JPS6076117A (ja) * 1983-09-30 1985-04-30 Sony Corp 半導体薄膜の結晶化方法
JPS60126840A (ja) * 1983-12-13 1985-07-06 Matsushita Electric Ind Co Ltd Ｓｏｉ形成用レーザ照射方法
JPS60189216A (ja) * 1984-03-08 1985-09-26 Agency Of Ind Science & Technol レ−ザアニ−リング装置
JPS62145718A (ja) * 1985-12-20 1987-06-29 Agency Of Ind Science & Technol 半導体単結晶層の製造方法
JPS62216318A (ja) * 1986-03-18 1987-09-22 Fujitsu Ltd レ−ザアニ−ル装置
JPH01246829A (ja) * 1988-03-28 1989-10-02 Tokyo Electron Ltd ビームアニール装置

Also Published As

Publication number Publication date
JPS6329819B2 (enExample) 1988-06-15

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