JPS57126175A - Amorphous silicon carbide/amorophous silicon hetero junction optoelectric element - Google Patents

Amorphous silicon carbide/amorophous silicon hetero junction optoelectric element

Info

Publication number
JPS57126175A
JPS57126175A JP56012313A JP1231381A JPS57126175A JP S57126175 A JPS57126175 A JP S57126175A JP 56012313 A JP56012313 A JP 56012313A JP 1231381 A JP1231381 A JP 1231381A JP S57126175 A JPS57126175 A JP S57126175A
Authority
JP
Japan
Prior art keywords
layer
type
light
silicon carbide
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56012313A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0363229B2 (enrdf_load_stackoverflow
Inventor
Yoshihiro Hamakawa
Yoshihisa Owada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Priority to JP56012313A priority Critical patent/JPS57126175A/ja
Priority to US06/253,141 priority patent/US4385199A/en
Priority to US06/266,064 priority patent/US4388482A/en
Priority to CA000391378A priority patent/CA1176740A/en
Priority to AT81110111T priority patent/ATE38296T1/de
Priority to AU78224/81A priority patent/AU558650B2/en
Priority to EP81110111A priority patent/EP0053402B1/en
Priority to DE8181110111T priority patent/DE3176919D1/de
Publication of JPS57126175A publication Critical patent/JPS57126175A/ja
Priority to US06/420,711 priority patent/US4385200A/en
Priority to SG65589A priority patent/SG65589G/en
Priority to HK796/89A priority patent/HK79689A/xx
Publication of JPH0363229B2 publication Critical patent/JPH0363229B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP56012313A 1980-12-03 1981-01-29 Amorphous silicon carbide/amorophous silicon hetero junction optoelectric element Granted JPS57126175A (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP56012313A JPS57126175A (en) 1981-01-29 1981-01-29 Amorphous silicon carbide/amorophous silicon hetero junction optoelectric element
US06/253,141 US4385199A (en) 1980-12-03 1981-04-10 Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon
US06/266,064 US4388482A (en) 1981-01-29 1981-05-19 High-voltage photovoltaic cell having a heterojunction of amorphous semiconductor and amorphous silicon
CA000391378A CA1176740A (en) 1980-12-03 1981-12-02 High-voltage photovoltaic cell having a hetero junction of amorphous semiconductor and amorphous silicon
AU78224/81A AU558650B2 (en) 1980-12-03 1981-12-03 Amorphous semiconductor high-voltage photovoltaic cell
AT81110111T ATE38296T1 (de) 1980-12-03 1981-12-03 Photovolteische zelle vom pin-typ mit heterouebergang zwischen einer amorphen siliziumverbindung und amorphem silizium.
EP81110111A EP0053402B1 (en) 1980-12-03 1981-12-03 Pin photovoltaic cell having a hetero junction of amorphous siliconcompound and amorphous silicon
DE8181110111T DE3176919D1 (en) 1980-12-03 1981-12-03 Pin photovoltaic cell having a hetero junction of amorphous siliconcompound and amorphous silicon
US06/420,711 US4385200A (en) 1980-12-03 1982-09-21 Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon
SG65589A SG65589G (en) 1980-12-03 1989-09-20 Pin photovoltaic cell having a hetero junction of amorphous silicon compound and amorphous silicon
HK796/89A HK79689A (en) 1980-12-03 1989-10-05 Pin photovoltaic cell having a hetero junction of amorphous silicon compound and amorphous silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56012313A JPS57126175A (en) 1981-01-29 1981-01-29 Amorphous silicon carbide/amorophous silicon hetero junction optoelectric element

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58044692A Division JPS58217414A (ja) 1983-03-16 1983-03-16 新規アモルフアスシリコンカ−バイド

Publications (2)

Publication Number Publication Date
JPS57126175A true JPS57126175A (en) 1982-08-05
JPH0363229B2 JPH0363229B2 (enrdf_load_stackoverflow) 1991-09-30

Family

ID=11801821

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56012313A Granted JPS57126175A (en) 1980-12-03 1981-01-29 Amorphous silicon carbide/amorophous silicon hetero junction optoelectric element

Country Status (1)

Country Link
JP (1) JPS57126175A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160175A (en) * 1981-03-28 1982-10-02 Semiconductor Energy Lab Co Ltd Photoelectric converter
JPS60247965A (ja) * 1984-05-23 1985-12-07 Seiko Epson Corp 固体撮像素子
JPS60251275A (ja) * 1984-05-29 1985-12-11 Mitsui Toatsu Chem Inc フツ素化シリコン薄膜の製法
US6383898B1 (en) 1999-05-28 2002-05-07 Sharp Kabushiki Kaisha Method for manufacturing photoelectric conversion device
US6731531B1 (en) 1997-07-29 2004-05-04 Micron Technology, Inc. Carburized silicon gate insulators for integrated circuits
US6835638B1 (en) 1997-07-29 2004-12-28 Micron Technology, Inc. Silicon carbide gate transistor and fabrication process
US7154153B1 (en) 1997-07-29 2006-12-26 Micron Technology, Inc. Memory device
US7196929B1 (en) 1997-07-29 2007-03-27 Micron Technology Inc Method for operating a memory device having an amorphous silicon carbide gate insulator
CN115863490A (zh) * 2021-09-24 2023-03-28 嘉兴阿特斯技术研究院有限公司 Pecvd法沉积本征非晶硅薄膜的方法、电池制备方法及电池

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4109271A (en) * 1977-05-27 1978-08-22 Rca Corporation Amorphous silicon-amorphous silicon carbide photovoltaic device
JPS554040A (en) * 1978-06-26 1980-01-12 Hitachi Ltd Photoconductive material
JPS5664476A (en) * 1979-08-30 1981-06-01 Plessey Overseas Armophous silicon solar battery

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4109271A (en) * 1977-05-27 1978-08-22 Rca Corporation Amorphous silicon-amorphous silicon carbide photovoltaic device
JPS554040A (en) * 1978-06-26 1980-01-12 Hitachi Ltd Photoconductive material
JPS5664476A (en) * 1979-08-30 1981-06-01 Plessey Overseas Armophous silicon solar battery

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160175A (en) * 1981-03-28 1982-10-02 Semiconductor Energy Lab Co Ltd Photoelectric converter
JPS60247965A (ja) * 1984-05-23 1985-12-07 Seiko Epson Corp 固体撮像素子
JPS60251275A (ja) * 1984-05-29 1985-12-11 Mitsui Toatsu Chem Inc フツ素化シリコン薄膜の製法
US6731531B1 (en) 1997-07-29 2004-05-04 Micron Technology, Inc. Carburized silicon gate insulators for integrated circuits
US6794255B1 (en) 1997-07-29 2004-09-21 Micron Technology, Inc. Carburized silicon gate insulators for integrated circuits
US6835638B1 (en) 1997-07-29 2004-12-28 Micron Technology, Inc. Silicon carbide gate transistor and fabrication process
US7154153B1 (en) 1997-07-29 2006-12-26 Micron Technology, Inc. Memory device
US7196929B1 (en) 1997-07-29 2007-03-27 Micron Technology Inc Method for operating a memory device having an amorphous silicon carbide gate insulator
US6383898B1 (en) 1999-05-28 2002-05-07 Sharp Kabushiki Kaisha Method for manufacturing photoelectric conversion device
CN115863490A (zh) * 2021-09-24 2023-03-28 嘉兴阿特斯技术研究院有限公司 Pecvd法沉积本征非晶硅薄膜的方法、电池制备方法及电池

Also Published As

Publication number Publication date
JPH0363229B2 (enrdf_load_stackoverflow) 1991-09-30

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