JPS571254A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS571254A
JPS571254A JP7431780A JP7431780A JPS571254A JP S571254 A JPS571254 A JP S571254A JP 7431780 A JP7431780 A JP 7431780A JP 7431780 A JP7431780 A JP 7431780A JP S571254 A JPS571254 A JP S571254A
Authority
JP
Japan
Prior art keywords
polycrystalline
type
layer
withstand voltage
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7431780A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6228571B2 (enrdf_load_stackoverflow
Inventor
Saburo Oikawa
Yoshio Terasawa
Akio Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7431780A priority Critical patent/JPS571254A/ja
Publication of JPS571254A publication Critical patent/JPS571254A/ja
Publication of JPS6228571B2 publication Critical patent/JPS6228571B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
JP7431780A 1980-06-04 1980-06-04 Semiconductor device and its manufacture Granted JPS571254A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7431780A JPS571254A (en) 1980-06-04 1980-06-04 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7431780A JPS571254A (en) 1980-06-04 1980-06-04 Semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPS571254A true JPS571254A (en) 1982-01-06
JPS6228571B2 JPS6228571B2 (enrdf_load_stackoverflow) 1987-06-22

Family

ID=13543614

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7431780A Granted JPS571254A (en) 1980-06-04 1980-06-04 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS571254A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6289360A (ja) * 1985-10-15 1987-04-23 シ−メンス、アクチエンゲゼルシヤフト 電力用サイリスタ
JPH02249230A (ja) * 1988-11-25 1990-10-05 Fujitsu Ltd 金属電極の形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6289360A (ja) * 1985-10-15 1987-04-23 シ−メンス、アクチエンゲゼルシヤフト 電力用サイリスタ
JPH02249230A (ja) * 1988-11-25 1990-10-05 Fujitsu Ltd 金属電極の形成方法

Also Published As

Publication number Publication date
JPS6228571B2 (enrdf_load_stackoverflow) 1987-06-22

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