JPS6228571B2 - - Google Patents
Info
- Publication number
- JPS6228571B2 JPS6228571B2 JP55074317A JP7431780A JPS6228571B2 JP S6228571 B2 JPS6228571 B2 JP S6228571B2 JP 55074317 A JP55074317 A JP 55074317A JP 7431780 A JP7431780 A JP 7431780A JP S6228571 B2 JPS6228571 B2 JP S6228571B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor layer
- type
- electrode
- polycrystalline semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 80
- 239000000758 substrate Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 description 11
- 230000012010 growth Effects 0.000 description 10
- 238000001259 photo etching Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7431780A JPS571254A (en) | 1980-06-04 | 1980-06-04 | Semiconductor device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7431780A JPS571254A (en) | 1980-06-04 | 1980-06-04 | Semiconductor device and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS571254A JPS571254A (en) | 1982-01-06 |
| JPS6228571B2 true JPS6228571B2 (enrdf_load_stackoverflow) | 1987-06-22 |
Family
ID=13543614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7431780A Granted JPS571254A (en) | 1980-06-04 | 1980-06-04 | Semiconductor device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS571254A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3667362D1 (de) * | 1985-10-15 | 1990-01-11 | Siemens Ag | Leistungsthyristor. |
| JPH02249230A (ja) * | 1988-11-25 | 1990-10-05 | Fujitsu Ltd | 金属電極の形成方法 |
-
1980
- 1980-06-04 JP JP7431780A patent/JPS571254A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS571254A (en) | 1982-01-06 |
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