JPS6352464B2 - - Google Patents

Info

Publication number
JPS6352464B2
JPS6352464B2 JP54083967A JP8396779A JPS6352464B2 JP S6352464 B2 JPS6352464 B2 JP S6352464B2 JP 54083967 A JP54083967 A JP 54083967A JP 8396779 A JP8396779 A JP 8396779A JP S6352464 B2 JPS6352464 B2 JP S6352464B2
Authority
JP
Japan
Prior art keywords
layer
insulating film
main surface
single crystal
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54083967A
Other languages
English (en)
Japanese (ja)
Other versions
JPS568842A (en
Inventor
Kotaro Kato
Yoshitaka Sugawara
Yoshikazu Hosokawa
Tatsuya Kamei
Kyoshi Tsukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Priority to JP8396779A priority Critical patent/JPS568842A/ja
Publication of JPS568842A publication Critical patent/JPS568842A/ja
Publication of JPS6352464B2 publication Critical patent/JPS6352464B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Element Separation (AREA)
JP8396779A 1979-07-04 1979-07-04 Semiconductor integrated circuit device Granted JPS568842A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8396779A JPS568842A (en) 1979-07-04 1979-07-04 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8396779A JPS568842A (en) 1979-07-04 1979-07-04 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS568842A JPS568842A (en) 1981-01-29
JPS6352464B2 true JPS6352464B2 (enrdf_load_stackoverflow) 1988-10-19

Family

ID=13817310

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8396779A Granted JPS568842A (en) 1979-07-04 1979-07-04 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS568842A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5951544A (ja) * 1982-09-17 1984-03-26 Jido Keisoku Gijutsu Kenkiyuukumiai 誘電体分離半導体集積回路装置の製造方法
JPS6062156A (ja) * 1983-09-16 1985-04-10 Nippon Telegr & Teleph Corp <Ntt> 高耐圧半導体装置
JPS61115346A (ja) * 1984-11-12 1986-06-02 Nec Corp 集積化コンデンサ構造
JPH06105712B2 (ja) * 1985-06-13 1994-12-21 沖電気工業株式会社 高耐圧バイポ−ラ型半導体集積装置およびその製造方法
JPH0717710B2 (ja) * 1989-05-19 1995-03-01 出光石油化学株式会社 エチレン系重合体組成物の製造方法
US5583072A (en) * 1995-06-30 1996-12-10 Siemens Components, Inc. Method of manufacturing a monolithic linear optocoupler
US5903016A (en) * 1995-06-30 1999-05-11 Siemens Components, Inc. Monolithic linear optocoupler

Also Published As

Publication number Publication date
JPS568842A (en) 1981-01-29

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