JPS568842A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS568842A
JPS568842A JP8396779A JP8396779A JPS568842A JP S568842 A JPS568842 A JP S568842A JP 8396779 A JP8396779 A JP 8396779A JP 8396779 A JP8396779 A JP 8396779A JP S568842 A JPS568842 A JP S568842A
Authority
JP
Japan
Prior art keywords
substrate
slots
region
island
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8396779A
Other languages
Japanese (ja)
Other versions
JPS6352464B2 (en
Inventor
Kotaro Kato
Yoshitaka Sugawara
Yoshikazu Hosokawa
Tatsuya Kamei
Kiyoshi Tsukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Priority to JP8396779A priority Critical patent/JPS568842A/en
Publication of JPS568842A publication Critical patent/JPS568842A/en
Publication of JPS6352464B2 publication Critical patent/JPS6352464B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit

Abstract

PURPOSE:To obtain a separated dielectric substrate having a high withstand voltage by a simple process when a semiconductor substrate is to be made in an island shape by V-shaped separating slots by a method wherein a lamination structure consisted of a high impurity concentraton region and an insulating oxide film are prepared under the base of island region. CONSTITUTION:An n-type Si substrate 31 is covered with an SiO2 film 32 and is etched using an anisotropic etching liquid, and V-shaped separating slots 33 are formed to produces an island region in the substrate 31. An n-type impurity is made to diffuses into the whole face containing the slots 33 to form an n<+>-type region 34 constituting a channel stopper in the surface layer of substrate 31 under the film 32, and the whole face is covered with an insulating SiO2 film 32. Then a polycrystalline Si layer 35 is piled up having the thickness deeper than the slots 33 being able to withstand handing, the back face of substrate 31 is burnished to expose the apex of slots 33 and the region of substrate surrounded with slots 33 is made to be a complete island-shape. After the disposition mentioned above, each function element 38, Al wirings 39, etc., are prepared in a single crystalline island 36 by an ordinary method.
JP8396779A 1979-07-04 1979-07-04 Semiconductor integrated circuit device Granted JPS568842A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8396779A JPS568842A (en) 1979-07-04 1979-07-04 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8396779A JPS568842A (en) 1979-07-04 1979-07-04 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS568842A true JPS568842A (en) 1981-01-29
JPS6352464B2 JPS6352464B2 (en) 1988-10-19

Family

ID=13817310

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8396779A Granted JPS568842A (en) 1979-07-04 1979-07-04 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS568842A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5951544A (en) * 1982-09-17 1984-03-26 Jido Keisoku Gijutsu Kenkiyuukumiai Manufacture of isolated dielectric material semiconductor integrated circuit device
JPS6062156A (en) * 1983-09-16 1985-04-10 Nippon Telegr & Teleph Corp <Ntt> High withstand voltage semiconductor device
JPS61115346A (en) * 1984-11-12 1986-06-02 Nec Corp Integrated capacitor structure
JPS61287169A (en) * 1985-06-13 1986-12-17 Oki Electric Ind Co Ltd High withstand voltage bipolar type semiconductor integrated device and manufacture thereof
US5494982A (en) * 1989-05-19 1996-02-27 Idemitsu Petrochemical Company, Limited Process for preparing ethylenic polymer composition
US5583072A (en) * 1995-06-30 1996-12-10 Siemens Components, Inc. Method of manufacturing a monolithic linear optocoupler
US5903016A (en) * 1995-06-30 1999-05-11 Siemens Components, Inc. Monolithic linear optocoupler

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5951544A (en) * 1982-09-17 1984-03-26 Jido Keisoku Gijutsu Kenkiyuukumiai Manufacture of isolated dielectric material semiconductor integrated circuit device
JPS6317334B2 (en) * 1982-09-17 1988-04-13 Jido Keisoku Gijutsu Kenkyukumiai
JPS6062156A (en) * 1983-09-16 1985-04-10 Nippon Telegr & Teleph Corp <Ntt> High withstand voltage semiconductor device
JPS61115346A (en) * 1984-11-12 1986-06-02 Nec Corp Integrated capacitor structure
JPS61287169A (en) * 1985-06-13 1986-12-17 Oki Electric Ind Co Ltd High withstand voltage bipolar type semiconductor integrated device and manufacture thereof
US5494982A (en) * 1989-05-19 1996-02-27 Idemitsu Petrochemical Company, Limited Process for preparing ethylenic polymer composition
US5583072A (en) * 1995-06-30 1996-12-10 Siemens Components, Inc. Method of manufacturing a monolithic linear optocoupler
US5903016A (en) * 1995-06-30 1999-05-11 Siemens Components, Inc. Monolithic linear optocoupler

Also Published As

Publication number Publication date
JPS6352464B2 (en) 1988-10-19

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