JPS5599766A - Manufacture of semiconductor integrated circuit device - Google Patents
Manufacture of semiconductor integrated circuit deviceInfo
- Publication number
- JPS5599766A JPS5599766A JP711079A JP711079A JPS5599766A JP S5599766 A JPS5599766 A JP S5599766A JP 711079 A JP711079 A JP 711079A JP 711079 A JP711079 A JP 711079A JP S5599766 A JPS5599766 A JP S5599766A
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- semiconductor integrated
- oxide film
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To make it possible to operate fine processing by a method wherein a comparatively thick oxide film is formed on the low density integrated ciruit part, and the growth thickness of the oxide film is limited to a comparatively small magnitude on the high density integrated part, in a semiconductor integrated device, such as a linear IC, including an I<2>L. CONSTITUTION:A suitable donor impurity is selectively diffused into the linear circuit part and the part where the I<2>L part is to be provided, on the surface of P-type Si substrate 10, and thereby N<+>-type regions 12 and 14 are formed. After this, N<->-type Si epitaxial layer 16 is formed. Next, the surfaces of linear circuit part 16a and I<2>L part 16b are oxidized and thereby they are made into 18A and 18B. On top of these is formed anti-oxidation film 20. Next, P<+>-type isolation region 22 is formed, and it is separated into part 16A and 16B. P-type base region 24 is formed on 16A. P-type base region 26 and P-type injector region 28 are formed on 16B. Next, insulation film 30 is formed. Further, N<+>-type collector contact region 32 is formed in region 24, N<+>-type collector contact region 34 above layer 12, and a plurality of N<+>-type collector regions 36 and 38 in region 26.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP711079A JPS5599766A (en) | 1979-01-26 | 1979-01-26 | Manufacture of semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP711079A JPS5599766A (en) | 1979-01-26 | 1979-01-26 | Manufacture of semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5599766A true JPS5599766A (en) | 1980-07-30 |
Family
ID=11656942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP711079A Pending JPS5599766A (en) | 1979-01-26 | 1979-01-26 | Manufacture of semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5599766A (en) |
-
1979
- 1979-01-26 JP JP711079A patent/JPS5599766A/en active Pending
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