JPS568842A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS568842A JPS568842A JP8396779A JP8396779A JPS568842A JP S568842 A JPS568842 A JP S568842A JP 8396779 A JP8396779 A JP 8396779A JP 8396779 A JP8396779 A JP 8396779A JP S568842 A JPS568842 A JP S568842A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- slots
- region
- island
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Element Separation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8396779A JPS568842A (en) | 1979-07-04 | 1979-07-04 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8396779A JPS568842A (en) | 1979-07-04 | 1979-07-04 | Semiconductor integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS568842A true JPS568842A (en) | 1981-01-29 |
JPS6352464B2 JPS6352464B2 (enrdf_load_stackoverflow) | 1988-10-19 |
Family
ID=13817310
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8396779A Granted JPS568842A (en) | 1979-07-04 | 1979-07-04 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS568842A (enrdf_load_stackoverflow) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5951544A (ja) * | 1982-09-17 | 1984-03-26 | Jido Keisoku Gijutsu Kenkiyuukumiai | 誘電体分離半導体集積回路装置の製造方法 |
JPS6062156A (ja) * | 1983-09-16 | 1985-04-10 | Nippon Telegr & Teleph Corp <Ntt> | 高耐圧半導体装置 |
JPS61115346A (ja) * | 1984-11-12 | 1986-06-02 | Nec Corp | 集積化コンデンサ構造 |
JPS61287169A (ja) * | 1985-06-13 | 1986-12-17 | Oki Electric Ind Co Ltd | 高耐圧バイポ−ラ型半導体集積装置およびその製造方法 |
US5494982A (en) * | 1989-05-19 | 1996-02-27 | Idemitsu Petrochemical Company, Limited | Process for preparing ethylenic polymer composition |
US5583072A (en) * | 1995-06-30 | 1996-12-10 | Siemens Components, Inc. | Method of manufacturing a monolithic linear optocoupler |
US5903016A (en) * | 1995-06-30 | 1999-05-11 | Siemens Components, Inc. | Monolithic linear optocoupler |
-
1979
- 1979-07-04 JP JP8396779A patent/JPS568842A/ja active Granted
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5951544A (ja) * | 1982-09-17 | 1984-03-26 | Jido Keisoku Gijutsu Kenkiyuukumiai | 誘電体分離半導体集積回路装置の製造方法 |
JPS6062156A (ja) * | 1983-09-16 | 1985-04-10 | Nippon Telegr & Teleph Corp <Ntt> | 高耐圧半導体装置 |
JPS61115346A (ja) * | 1984-11-12 | 1986-06-02 | Nec Corp | 集積化コンデンサ構造 |
JPS61287169A (ja) * | 1985-06-13 | 1986-12-17 | Oki Electric Ind Co Ltd | 高耐圧バイポ−ラ型半導体集積装置およびその製造方法 |
US5494982A (en) * | 1989-05-19 | 1996-02-27 | Idemitsu Petrochemical Company, Limited | Process for preparing ethylenic polymer composition |
US5583072A (en) * | 1995-06-30 | 1996-12-10 | Siemens Components, Inc. | Method of manufacturing a monolithic linear optocoupler |
US5903016A (en) * | 1995-06-30 | 1999-05-11 | Siemens Components, Inc. | Monolithic linear optocoupler |
Also Published As
Publication number | Publication date |
---|---|
JPS6352464B2 (enrdf_load_stackoverflow) | 1988-10-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IE833068L (en) | Producing a semiconductor device having isolation regions¹between elements | |
US4193836A (en) | Method for making semiconductor structure | |
JPS568842A (en) | Semiconductor integrated circuit device | |
JPS54116888A (en) | Manufacture of dielectric separate substrate | |
JPS577959A (en) | Semiconductor device | |
JPS54154272A (en) | Contact forming method for semiconductor device | |
JPS56146247A (en) | Manufacture of semiconductor device | |
US3913121A (en) | Semiconductor structure | |
JPS6155253B2 (enrdf_load_stackoverflow) | ||
JPS54154966A (en) | Semiconductor electron device | |
JPS6428962A (en) | Semiconductor device and manufacture thereof | |
JPS6457641A (en) | Manufacture of semiconductor device | |
JPS55105340A (en) | Semiconductor device and its manufacturing method | |
JPS57133637A (en) | Semiconductor integrated circuit device | |
JPS6226837A (ja) | 半導体装置の製造方法 | |
JPS5783042A (en) | Manufacture of semiconductor device | |
JPS5522878A (en) | Insulation gate type field effect semiconductor device | |
JPS5596652A (en) | Method of fabricating semiconductor device | |
JPS6455853A (en) | Semiconductor device and manufacture thereof | |
JPS5768048A (en) | Semiconductor device and manufacture thereof | |
JPS57196544A (en) | Manufacture of integrated circuit isolated by oxide film | |
JPS55111169A (en) | Method of manufacturing semiconductor device | |
JPS56158444A (en) | Manufacture of semiconductor integrated circuit | |
JPS6288334A (ja) | 誘電体絶縁分離基板の製造方法 | |
JPS5640256A (en) | Manufacture of semiconductor device |