JPS57117283A - 3-5 group compound semiconductor device - Google Patents

3-5 group compound semiconductor device

Info

Publication number
JPS57117283A
JPS57117283A JP449481A JP449481A JPS57117283A JP S57117283 A JPS57117283 A JP S57117283A JP 449481 A JP449481 A JP 449481A JP 449481 A JP449481 A JP 449481A JP S57117283 A JPS57117283 A JP S57117283A
Authority
JP
Japan
Prior art keywords
layer
film
tin
ohmic contact
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP449481A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244836B2 (enrdf_load_stackoverflow
Inventor
Katsumi Tsujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP449481A priority Critical patent/JPS57117283A/ja
Priority to NLAANVRAGE8200038,A priority patent/NL186354C/xx
Priority to DE19823200788 priority patent/DE3200788A1/de
Publication of JPS57117283A publication Critical patent/JPS57117283A/ja
Priority to US06/681,710 priority patent/US4553154A/en
Publication of JPS6244836B2 publication Critical patent/JPS6244836B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
JP449481A 1981-01-13 1981-01-13 3-5 group compound semiconductor device Granted JPS57117283A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP449481A JPS57117283A (en) 1981-01-13 1981-01-13 3-5 group compound semiconductor device
NLAANVRAGE8200038,A NL186354C (nl) 1981-01-13 1982-01-07 Halfgeleiderinrichting die uit iii-v verbindingen bestaat, met een samengestelde elektrode.
DE19823200788 DE3200788A1 (de) 1981-01-13 1982-01-13 Elektrode fuer halbleiterbauteile
US06/681,710 US4553154A (en) 1981-01-13 1984-12-13 Light emitting diode electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP449481A JPS57117283A (en) 1981-01-13 1981-01-13 3-5 group compound semiconductor device

Publications (2)

Publication Number Publication Date
JPS57117283A true JPS57117283A (en) 1982-07-21
JPS6244836B2 JPS6244836B2 (enrdf_load_stackoverflow) 1987-09-22

Family

ID=11585622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP449481A Granted JPS57117283A (en) 1981-01-13 1981-01-13 3-5 group compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS57117283A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0463480A (ja) * 1990-07-02 1992-02-28 Sharp Corp ３―ｖ族化合物半導体装置
JP2008098336A (ja) * 2006-10-11 2008-04-24 Stanley Electric Co Ltd 半導体発光素子およびその製造方法
JP2020202350A (ja) * 2019-06-13 2020-12-17 ローム株式会社 半導体発光装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5411689A (en) * 1977-06-28 1979-01-27 Toshiba Corp Light emitting element of gallium phosphide
JPS5575276A (en) * 1978-12-02 1980-06-06 Sharp Corp 3[5 group compound semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5411689A (en) * 1977-06-28 1979-01-27 Toshiba Corp Light emitting element of gallium phosphide
JPS5575276A (en) * 1978-12-02 1980-06-06 Sharp Corp 3[5 group compound semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0463480A (ja) * 1990-07-02 1992-02-28 Sharp Corp ３―ｖ族化合物半導体装置
JP2008098336A (ja) * 2006-10-11 2008-04-24 Stanley Electric Co Ltd 半導体発光素子およびその製造方法
JP2020202350A (ja) * 2019-06-13 2020-12-17 ローム株式会社 半導体発光装置

Also Published As

Publication number Publication date
JPS6244836B2 (enrdf_load_stackoverflow) 1987-09-22

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