JPS57114282A - Non-volatile semiconductor memory - Google Patents

Non-volatile semiconductor memory

Info

Publication number
JPS57114282A
JPS57114282A JP56000588A JP58881A JPS57114282A JP S57114282 A JPS57114282 A JP S57114282A JP 56000588 A JP56000588 A JP 56000588A JP 58881 A JP58881 A JP 58881A JP S57114282 A JPS57114282 A JP S57114282A
Authority
JP
Japan
Prior art keywords
region
drain
source
phosphorus
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56000588A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0132673B2 (cs
Inventor
Shuichi Oya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56000588A priority Critical patent/JPS57114282A/ja
Publication of JPS57114282A publication Critical patent/JPS57114282A/ja
Publication of JPH0132673B2 publication Critical patent/JPH0132673B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Non-Volatile Memory (AREA)
JP56000588A 1981-01-06 1981-01-06 Non-volatile semiconductor memory Granted JPS57114282A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56000588A JPS57114282A (en) 1981-01-06 1981-01-06 Non-volatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56000588A JPS57114282A (en) 1981-01-06 1981-01-06 Non-volatile semiconductor memory

Publications (2)

Publication Number Publication Date
JPS57114282A true JPS57114282A (en) 1982-07-16
JPH0132673B2 JPH0132673B2 (cs) 1989-07-10

Family

ID=11477879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56000588A Granted JPS57114282A (en) 1981-01-06 1981-01-06 Non-volatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPS57114282A (cs)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61127179A (ja) * 1984-11-21 1986-06-14 ローム・コーポレーション 単一トランジスタの電気的プログラム式メモリ装置、その製造方法及び使用方法
JPS622570A (ja) * 1985-04-30 1987-01-08 テキサス　インスツルメンツ　インコ−ポレイテツド フロ−テイング・ゲ−ト電界効果トランジスタ
JPS62118581A (ja) * 1985-09-27 1987-05-29 テキサス　インスツルメンツ　インコ−ポレイテツド Ｅｅｐｒｏｍメモリセルおよびその製作方法
JPS62276878A (ja) * 1986-05-26 1987-12-01 Hitachi Ltd 半導体記憶装置
JPS6481272A (en) * 1987-09-24 1989-03-27 Hitachi Ltd Semiconductor memory device
US5587947A (en) * 1994-03-03 1996-12-24 Rohm Corporation Low voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and erase

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5178991A (cs) * 1974-12-30 1976-07-09 Intel Corp

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5178991A (cs) * 1974-12-30 1976-07-09 Intel Corp

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61127179A (ja) * 1984-11-21 1986-06-14 ローム・コーポレーション 単一トランジスタの電気的プログラム式メモリ装置、その製造方法及び使用方法
JPS622570A (ja) * 1985-04-30 1987-01-08 テキサス　インスツルメンツ　インコ−ポレイテツド フロ−テイング・ゲ−ト電界効果トランジスタ
JPS62118581A (ja) * 1985-09-27 1987-05-29 テキサス　インスツルメンツ　インコ−ポレイテツド Ｅｅｐｒｏｍメモリセルおよびその製作方法
JPS62276878A (ja) * 1986-05-26 1987-12-01 Hitachi Ltd 半導体記憶装置
JPS6481272A (en) * 1987-09-24 1989-03-27 Hitachi Ltd Semiconductor memory device
US5587947A (en) * 1994-03-03 1996-12-24 Rohm Corporation Low voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and erase
US5687120A (en) * 1994-03-03 1997-11-11 Rohn Corporation Low voltage one transistor flash eeprom cell using fowler-nordheim programming and erase
US5689459A (en) * 1994-03-03 1997-11-18 Rohm Corporation Low voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and erase

Also Published As

Publication number Publication date
JPH0132673B2 (cs) 1989-07-10

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