JPH0132673B2 - - Google Patents

Info

Publication number
JPH0132673B2
JPH0132673B2 JP56000588A JP58881A JPH0132673B2 JP H0132673 B2 JPH0132673 B2 JP H0132673B2 JP 56000588 A JP56000588 A JP 56000588A JP 58881 A JP58881 A JP 58881A JP H0132673 B2 JPH0132673 B2 JP H0132673B2
Authority
JP
Japan
Prior art keywords
drain
floating gate
region
gate electrode
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56000588A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57114282A (en
Inventor
Shuichi Ooya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56000588A priority Critical patent/JPS57114282A/ja
Publication of JPS57114282A publication Critical patent/JPS57114282A/ja
Publication of JPH0132673B2 publication Critical patent/JPH0132673B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Non-Volatile Memory (AREA)
JP56000588A 1981-01-06 1981-01-06 Non-volatile semiconductor memory Granted JPS57114282A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56000588A JPS57114282A (en) 1981-01-06 1981-01-06 Non-volatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56000588A JPS57114282A (en) 1981-01-06 1981-01-06 Non-volatile semiconductor memory

Publications (2)

Publication Number Publication Date
JPS57114282A JPS57114282A (en) 1982-07-16
JPH0132673B2 true JPH0132673B2 (cs) 1989-07-10

Family

ID=11477879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56000588A Granted JPS57114282A (en) 1981-01-06 1981-01-06 Non-volatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPS57114282A (cs)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
JPS622570A (ja) * 1985-04-30 1987-01-08 テキサス　インスツルメンツ　インコ−ポレイテツド フロ−テイング・ゲ−ト電界効果トランジスタ
JPS62118581A (ja) * 1985-09-27 1987-05-29 テキサス　インスツルメンツ　インコ−ポレイテツド Ｅｅｐｒｏｍメモリセルおよびその製作方法
JP2555027B2 (ja) * 1986-05-26 1996-11-20 株式会社日立製作所 半導体記憶装置
JP2602244B2 (ja) * 1987-09-24 1997-04-23 株式会社日立製作所 半導体記憶装置
DE69523743T2 (de) * 1994-03-03 2002-08-01 Rohm Corp., San Jose Überlöschungsdetektion in einer niederspannungs-eintransistor-flash-eeprom-zelle unter verwendung von fowler-nordheim-programmierung und -löschung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3984822A (en) * 1974-12-30 1976-10-05 Intel Corporation Double polycrystalline silicon gate memory device

Also Published As

Publication number Publication date
JPS57114282A (en) 1982-07-16

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