JPS57112041A - Evaluation for silicon single crystal - Google Patents

Evaluation for silicon single crystal

Info

Publication number
JPS57112041A
JPS57112041A JP18733780A JP18733780A JPS57112041A JP S57112041 A JPS57112041 A JP S57112041A JP 18733780 A JP18733780 A JP 18733780A JP 18733780 A JP18733780 A JP 18733780A JP S57112041 A JPS57112041 A JP S57112041A
Authority
JP
Japan
Prior art keywords
single crystal
life
evaluation
tested
20omegacm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18733780A
Other languages
English (en)
Inventor
Akira Osawa
Koichiro Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18733780A priority Critical patent/JPS57112041A/ja
Publication of JPS57112041A publication Critical patent/JPS57112041A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP18733780A 1980-12-29 1980-12-29 Evaluation for silicon single crystal Pending JPS57112041A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18733780A JPS57112041A (en) 1980-12-29 1980-12-29 Evaluation for silicon single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18733780A JPS57112041A (en) 1980-12-29 1980-12-29 Evaluation for silicon single crystal

Publications (1)

Publication Number Publication Date
JPS57112041A true JPS57112041A (en) 1982-07-12

Family

ID=16204226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18733780A Pending JPS57112041A (en) 1980-12-29 1980-12-29 Evaluation for silicon single crystal

Country Status (1)

Country Link
JP (1) JPS57112041A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60203840A (ja) * 1984-02-29 1985-10-15 ハ−ン　−　マイトネル　−　インスチツ−ト・ベルリン・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング 光感知材料の無接触非破壊試験のためのマイクロ波測定方法およびマイクロ波測定装置
JPS6166975A (ja) * 1984-09-06 1986-04-05 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 物質の電気的性質を測定する装置
JPWO2016174947A1 (ja) * 2015-04-28 2018-02-15 カーリットホールディングス株式会社 シリコン材料からなる光学部材及びそれを有する光学機器
JP2019050283A (ja) * 2017-09-08 2019-03-28 信越半導体株式会社 シリコン単結晶基板中の炭素濃度評価方法、及び半導体デバイスの製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60203840A (ja) * 1984-02-29 1985-10-15 ハ−ン　−　マイトネル　−　インスチツ−ト・ベルリン・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング 光感知材料の無接触非破壊試験のためのマイクロ波測定方法およびマイクロ波測定装置
JPS6166975A (ja) * 1984-09-06 1986-04-05 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 物質の電気的性質を測定する装置
JPWO2016174947A1 (ja) * 2015-04-28 2018-02-15 カーリットホールディングス株式会社 シリコン材料からなる光学部材及びそれを有する光学機器
JP2019050283A (ja) * 2017-09-08 2019-03-28 信越半導体株式会社 シリコン単結晶基板中の炭素濃度評価方法、及び半導体デバイスの製造方法

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