JPS5550632A - Measuring life time of minority carrier in n-type semiconductor - Google Patents

Measuring life time of minority carrier in n-type semiconductor

Info

Publication number
JPS5550632A
JPS5550632A JP12480078A JP12480078A JPS5550632A JP S5550632 A JPS5550632 A JP S5550632A JP 12480078 A JP12480078 A JP 12480078A JP 12480078 A JP12480078 A JP 12480078A JP S5550632 A JPS5550632 A JP S5550632A
Authority
JP
Japan
Prior art keywords
type semiconductor
life time
minority carriers
purity
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12480078A
Other languages
Japanese (ja)
Other versions
JPS5857907B2 (en
Inventor
Yuichi Furukawa
Hiroshi Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON SILICON KK
NIPPON SILICONE KK
Mitsubishi Metal Corp
Original Assignee
NIPPON SILICON KK
NIPPON SILICONE KK
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON SILICON KK, NIPPON SILICONE KK, Mitsubishi Metal Corp filed Critical NIPPON SILICON KK
Priority to JP12480078A priority Critical patent/JPS5857907B2/en
Publication of JPS5550632A publication Critical patent/JPS5550632A/en
Publication of JPS5857907B2 publication Critical patent/JPS5857907B2/en
Expired legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To accurately measure only the life time which is determined by the purity of semiconductor crystals by minimizing the surface recombination speed of minority carriers in measuring the life time of minority carriers in n-type semiconductors.
CONSTITUTION: An n-type semiconductor that is a specimen is immersed into the room-temperature solution of stannous chloride for about 30 minitutes, then, it is dried by infrared rays. As a result, a surface inversion layer or a surface junction is formed on the n-type semiconductor surface by absorption of positive ions, electric fields are generated between the layer and the inner portion, the surface recomfination center does not actually contribute any more, thereby the surface recombination of holes or minority carriers is suppressed. In the case the lift time of the holes are measured by the method utilizing photoelectromagnetic effects using the treated specimen, the values are obtained as the life time determined by the purity of the crystal and the density of the crystal defects inside the n-type semiconductor. By this method, the life time can be measured without the effects of the surface recombination speed even in the case of thin n-type semiconductor wafers, and high- quality wafers can be produced.
COPYRIGHT: (C)1980,JPO&Japio
JP12480078A 1978-10-11 1978-10-11 Minority carrier lifetime measurement method for N-type semiconductors Expired JPS5857907B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12480078A JPS5857907B2 (en) 1978-10-11 1978-10-11 Minority carrier lifetime measurement method for N-type semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12480078A JPS5857907B2 (en) 1978-10-11 1978-10-11 Minority carrier lifetime measurement method for N-type semiconductors

Publications (2)

Publication Number Publication Date
JPS5550632A true JPS5550632A (en) 1980-04-12
JPS5857907B2 JPS5857907B2 (en) 1983-12-22

Family

ID=14894429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12480078A Expired JPS5857907B2 (en) 1978-10-11 1978-10-11 Minority carrier lifetime measurement method for N-type semiconductors

Country Status (1)

Country Link
JP (1) JPS5857907B2 (en)

Also Published As

Publication number Publication date
JPS5857907B2 (en) 1983-12-22

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