JPS57111016A - Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer - Google Patents

Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer

Info

Publication number
JPS57111016A
JPS57111016A JP18902280A JP18902280A JPS57111016A JP S57111016 A JPS57111016 A JP S57111016A JP 18902280 A JP18902280 A JP 18902280A JP 18902280 A JP18902280 A JP 18902280A JP S57111016 A JPS57111016 A JP S57111016A
Authority
JP
Japan
Prior art keywords
mixed crystal
gallium phosphide
phosphide arsenide
arsenide mixed
ratio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18902280A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6347135B2 (https=
Inventor
Shinichi Hasegawa
Hisanori Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Monsanto Chemical Co
Priority to JP18902280A priority Critical patent/JPS57111016A/ja
Publication of JPS57111016A publication Critical patent/JPS57111016A/ja
Publication of JPS6347135B2 publication Critical patent/JPS6347135B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3218—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides

Landscapes

  • Led Devices (AREA)
JP18902280A 1980-12-26 1980-12-26 Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer Granted JPS57111016A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18902280A JPS57111016A (en) 1980-12-26 1980-12-26 Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18902280A JPS57111016A (en) 1980-12-26 1980-12-26 Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer

Publications (2)

Publication Number Publication Date
JPS57111016A true JPS57111016A (en) 1982-07-10
JPS6347135B2 JPS6347135B2 (https=) 1988-09-20

Family

ID=16233986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18902280A Granted JPS57111016A (en) 1980-12-26 1980-12-26 Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer

Country Status (1)

Country Link
JP (1) JPS57111016A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4756792A (en) * 1985-09-09 1988-07-12 Mitsubishi Monsanto Chemical Co., Ltd. Method for vapor-phase epitaxial growth of a single crystalline-, gallium arsenide thin film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4756792A (en) * 1985-09-09 1988-07-12 Mitsubishi Monsanto Chemical Co., Ltd. Method for vapor-phase epitaxial growth of a single crystalline-, gallium arsenide thin film

Also Published As

Publication number Publication date
JPS6347135B2 (https=) 1988-09-20

Similar Documents

Publication Publication Date Title
GB1490665A (en) Method of growing epitaxial layers of silicon
JPS56138917A (en) Vapor phase epitaxial growth
JPS57111016A (en) Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer
KR870003554A (ko) 비소화칼륨 단결정 박막의 기상 에피택셜 성장방법
JPS55148477A (en) Fabricating method of light emitting diode
JPS568815A (en) Method of growing of compound semiconductor in vapor phase epitaxial film
JPS5624985A (en) Manufacture of gallium phosphide green light emitting element
JPS56118329A (en) Vapor phase epitaxial growth method for compound semiconductor monocrystalling thin film
JPS5317067A (en) Vapor phase epitaxial growth method
JPS5271172A (en) Growth of p type boron phosphide semiconductor
JPS5724591A (en) Manufacture of semiconductor laser device
JPS5491175A (en) Vapour-phase growth method of compound semiconductor crystal
JPS5775420A (en) Gallium phosphide epitaxial wafer and manufacture thereof
JPS6437832A (en) Method of growing compound semiconductor crystal
JPS5670630A (en) Manufacture of compound semiconductor by gas phase epitaxial growth
JPS6428374A (en) Method for selectively growing tungsten
JPS52116072A (en) Process for doping nitrogen to gallium phosphide
JPS5673427A (en) Manufacture of gallium arsenide epitaxial wafer
JPS56125827A (en) Vapor phase epitaxial growing method of compound semiconductor film
JPS5698823A (en) Method of vapor growth of semiconductor of 3-5 group compound
JPS54133093A (en) Manufacture for gallium phosphide green color light emitting element
JPS5775421A (en) Method of vapor growth compound semiconductor epitaxial film
JPS5972717A (ja) 半導体単結晶の製造方法
ATE80498T1 (de) Materialsparendes verfahren zur herstellung von mischkristallen.
JPS57123897A (en) Forming method of compound semiconductor crystal