JPS6347135B2 - - Google Patents

Info

Publication number
JPS6347135B2
JPS6347135B2 JP18902280A JP18902280A JPS6347135B2 JP S6347135 B2 JPS6347135 B2 JP S6347135B2 JP 18902280 A JP18902280 A JP 18902280A JP 18902280 A JP18902280 A JP 18902280A JP S6347135 B2 JPS6347135 B2 JP S6347135B2
Authority
JP
Japan
Prior art keywords
mixed crystal
layer
ratio
gallium arsenide
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP18902280A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57111016A (en
Inventor
Shinichi Hasegawa
Hisanori Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Monsanto Chemical Co
Priority to JP18902280A priority Critical patent/JPS57111016A/ja
Publication of JPS57111016A publication Critical patent/JPS57111016A/ja
Publication of JPS6347135B2 publication Critical patent/JPS6347135B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3218—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides

Landscapes

  • Led Devices (AREA)
JP18902280A 1980-12-26 1980-12-26 Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer Granted JPS57111016A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18902280A JPS57111016A (en) 1980-12-26 1980-12-26 Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18902280A JPS57111016A (en) 1980-12-26 1980-12-26 Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer

Publications (2)

Publication Number Publication Date
JPS57111016A JPS57111016A (en) 1982-07-10
JPS6347135B2 true JPS6347135B2 (https=) 1988-09-20

Family

ID=16233986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18902280A Granted JPS57111016A (en) 1980-12-26 1980-12-26 Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer

Country Status (1)

Country Link
JP (1) JPS57111016A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6259595A (ja) * 1985-09-09 1987-03-16 Mitsubishi Monsanto Chem Co ひ化ガリウム単結晶薄膜の気相エピタキシヤル成長方法

Also Published As

Publication number Publication date
JPS57111016A (en) 1982-07-10

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