JPS57110665A - Heating mechanism for vacuum apparatus - Google Patents
Heating mechanism for vacuum apparatusInfo
- Publication number
- JPS57110665A JPS57110665A JP18676880A JP18676880A JPS57110665A JP S57110665 A JPS57110665 A JP S57110665A JP 18676880 A JP18676880 A JP 18676880A JP 18676880 A JP18676880 A JP 18676880A JP S57110665 A JPS57110665 A JP S57110665A
- Authority
- JP
- Japan
- Prior art keywords
- temp
- substrate holder
- heater
- uniformity
- vacuum apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To produce a film of high quality and high homogenity of properties by constituting a sample substrate holder and a heating heater in a vacuum apparatus into one body, and leading the leads of the heaters to the outside by means of a rotator. CONSTITUTION:A heating heater is embedded in a substrate holder to neath pattern 31, and the end parts thereof are conducted to the circumferential edge part of the substrate holder, and are further led to the outside by means of a rotary pole 33 and lead terminals 32. Thereby, the uniformity of film thickness is stabilized to about + or -3-5%, and the temp. difference of the substrate holder per se is kept within about + or -1 deg.C by the integration thereof with the heater, thus resulting in considerably improved temp, uniformity of the substrate. Further, the temp. of the heater per se and the temp. of the substrate holder attain roughly the same temp., and therefore the absolute temp. is controlled precisely.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18676880A JPS57110665A (en) | 1980-12-26 | 1980-12-26 | Heating mechanism for vacuum apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18676880A JPS57110665A (en) | 1980-12-26 | 1980-12-26 | Heating mechanism for vacuum apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57110665A true JPS57110665A (en) | 1982-07-09 |
Family
ID=16194285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18676880A Pending JPS57110665A (en) | 1980-12-26 | 1980-12-26 | Heating mechanism for vacuum apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57110665A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5814945A (en) * | 1981-07-22 | 1983-01-28 | Shimada Phys & Chem Ind Co Ltd | Vapor growth apparatus |
| WO1994001597A1 (en) * | 1992-07-07 | 1994-01-20 | Cobrain N.V. | Apparatus and method for treating a wafer of semiconductor material |
-
1980
- 1980-12-26 JP JP18676880A patent/JPS57110665A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5814945A (en) * | 1981-07-22 | 1983-01-28 | Shimada Phys & Chem Ind Co Ltd | Vapor growth apparatus |
| JPS625995B2 (en) * | 1981-07-22 | 1987-02-07 | Shimada Rika Kogyo Kk | |
| WO1994001597A1 (en) * | 1992-07-07 | 1994-01-20 | Cobrain N.V. | Apparatus and method for treating a wafer of semiconductor material |
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