JPS5814945A - Vapor growth apparatus - Google Patents

Abstract

PURPOSE:To obtain the vapor growth apparatus preventing the generation of crystal defect such as slip band and the floatation of a susceptor constituted so as to subject the susceptor to induction heating from the side of a base plate wafer by arranging an induction heating coil above the base plate wafer placing surface of the susceptor. CONSTITUTION:High frequency current is supplied to an induction heating coil 5 to generate electromagnetic force for pressing a base plate wafer 3 toward a susceptor 2 and close adhesiveness of the wafer 3 and the susceptor 2 is made well. In this condition, the susceptor 2 is subjected to induction heating to uniformly raise the temp. of each wafer 3 by heat conduction and gas phase growth free from crystal defect such as strip band is carried out. In addition, because the induction heating coil 5 is present above the susceptor 2, downwardly directed electromagnetic force is acted on the susceptor 2 to suppress the floatation of the susceptor 2.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a vapor phase growth apparatus. As shown in FIG. The susceptor 2 is supported by the rotating shaft 4 and rotated, and a high-frequency oscillator 6 is connected to the induction heating coil 5 placed below the susceptor 2.
A high frequency current is passed through the susceptor 2 to inductively heat the susceptor 2, and the heat is transferred to the substrate wafer 3.
is heated, and a reactive gas (for example, a mixed gas of H2 and 5iCj4) is fed into the reaction perger l through the gas passage 7 in the rotating shaft 4 to cause vapor phase growth on the surface of the substrate wafer/%3. I'm vomiting.

However, in such a conventional vapor phase growth apparatus, there is a temperature difference between the susceptor 2 and the substrate wafer 3, which can cause crystal defects such as slip bands on the substrate wafer 3, and also increases the temperature of the substrate wafer 3. Ji! III wave oscillator6. When the frequency is lowered, for example, when the frequency reaches 30 KHz, there is a drawback that the susceptor 2 floats due to the force of the high frequency current flowing through the induction heating coil 5.

An object of the present invention is to provide a vapor phase growth apparatus that can prevent the occurrence of crystal defects such as slip bands and suppress the floating of a susceptor.

The vapor phase growth apparatus of the present invention disposes an induction heating coil above the substrate wafer mounting surface of the susceptor, and heats the susceptor from the substrate wafer side by induction, thereby suscepting the substrate wafer to the substrate wafer. It is designed to apply an electromagnetic force to the side of the device.

Embodiments of the present invention will be described in detail below with reference to the drawings.

FIG. 2 shows a first embodiment of the present invention. In the vapor phase growth apparatus of this embodiment, a susceptor 2 is disposed horizontally in a reaction pellet jar 1, and a substrate wafer is placed on this susceptor 2. 3 is placed so that it receives heat. ? The segment 2 is supported by a rotating shaft 4 that passes through the bottom plate of the reaction pellet jar 1. A reaction gas supply pipe 8 is installed through the upper part of the reaction pellet jar 1, and a reaction gas supply pipe 8 is attached from the supply head 8 at the tip thereof. Reaction gas is supplied into the reaction Pel jar 1. A reaction gas outlet 9 is provided on the bottom plate 1 of the reaction Pel jar 1. The reaction Pel jar 1 is placed opposite the top surface of the substrate wafer 3. An induction heating coil 5 is disposed outside and above the holder and is supported by a support IO.

In this example, the support 1O is the bottom plate IA of the reaction Pelger 1.
installed on. A high frequency oscillator 6 is connected to the induction heating coil 5.

In such a vapor phase growth apparatus, the induction heating coil 5
When a high frequency current is applied to the substrate wafer 3, an electromagnetic force that presses the substrate wafer 3 toward the susceptor 2 acts, and the adhesion between the substrate wafer 3 and the susceptor 2 improves. In this state, when the temperature of the susceptor 2 rises due to induction heating, the temperature rises uniformly due to thermal conduction of each substrate wafer/3ti above it, allowing vapor phase growth without crystal defects such as slip bands. In addition, since the induction heating coil 5 is located above the susceptor 2, a downward electromagnetic force acts on the susceptor 2, causing the susceptor 2 to
Fi will not surface.

FIG. 3 shows a second embodiment of the present invention. In the vapor phase growth apparatus of this embodiment, a visiting heating coil is disposed above the susceptor 2. Although the process is similar, this embodiment differs in that the induction heating coil 6 is placed inside the reaction Pel jar 1. In this case, the induction heating coil 5Fi should be installed to prevent corrosion by the reaction gas.
It is protected with a suppurant material 11 such as quartz.

The same effect as in the first embodiment can be obtained even if it is made as shown in FIG.

As explained above, in the vapor phase growth apparatus of the present invention, ore,
Since an induction heating coil is arranged above the susceptor to perform vapor phase growth on the substrate wafer I on the upper surface of the susceptor, an electromagnetic force that presses the substrate wafer I against the susceptor acts, and the substrate wafer and the susceptor are brought into close contact with each other. The induction-heated susceptor allows each substrate to be uniformly coated with the knee 71 to ensure good properties.
is heated, and it is possible to perform vapor phase growth without O crystal defects such as slip bands. Therefore, according to the invention:
Yield and productivity can be improved. 1. According to the present invention, a downward electromagnetic force is applied to the susceptor by the induction heating coil, and the floating of the susceptor can be prevented.

[Brief explanation of the drawing]

FIG. 1 is a vertical sectional view showing one embodiment of a conventional vapor phase growth apparatus, and FIGS. FIG. 3 is a vertical cross-sectional view of the second embodiment. 1... Reactor jar, 2... Susceptor, 3...
Substrate wafer, 4... rotating shaft, 5... induction heating coil.

Claims (1)

[Claims] placing a substrate wafer on a susceptor rotating within a reaction Pel jar, and supplying a reaction gas into the reaction Pel jar;
A vapor phase growth apparatus for growing the substrate wafer in a vapor phase while inductively heating the susceptor with an induction heating coil, wherein the induction heating coil is disposed above the susceptor.