JPS6312128A - Barrel type vapor growth apparatus - Google Patents
Barrel type vapor growth apparatusInfo
- Publication number
- JPS6312128A JPS6312128A JP62055829A JP5582987A JPS6312128A JP S6312128 A JPS6312128 A JP S6312128A JP 62055829 A JP62055829 A JP 62055829A JP 5582987 A JP5582987 A JP 5582987A JP S6312128 A JPS6312128 A JP S6312128A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- coil
- growth apparatus
- type vapor
- top plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001947 vapour-phase growth Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 238000009826 distribution Methods 0.000 abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
-
- H01L21/205—
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、バレル型気相成長装置に係り、特にサセプタ
の温度分布の改善に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a barrel-type vapor phase growth apparatus, and particularly to improving the temperature distribution of a susceptor.
バレル型気相成長装置として、第３図に示すように、外
周に複数の平面を有する裁頭角錐形のサセプタ１をトッ
ププレート２に吊下し、このトッププレート２をハンガ
ー３によって支持し、サセプタ１の内部にＲＦコイル４
全設けて、サセプタ１’を加熱する方式が提案されてい
る。As a barrel type vapor phase growth apparatus, as shown in FIG. 3, a truncated pyramid-shaped susceptor 1 having a plurality of flat surfaces on the outer periphery is suspended from a top plate 2, and this top plate 2 is supported by a hanger 3. RF coil 4 inside susceptor 1
A method has been proposed in which all the susceptors are provided and the susceptor 1' is heated.
ところで、前記のように、サセプタ１′（ｉｌ−その内
部に設けたＲＦコイル４で加熱する場合、トッププレー
ト２があるため、１１（、Ｆコイル４の上端はサセプタ
１の上端より下に位置することになる。By the way, as mentioned above, when heating with the RF coil 4 provided inside the susceptor 1'(il), the top end of the F coil 4 is located below the top end of the susceptor 1 because of the top plate 2. I will do it.
このため、サセプタ１の上端部寄りの温度に、ＲＦコイ
ルのない上端側へ多量に逃げ、第２図の曲線Ｔ１で示す
ように、低下し、サセプタ１の上端から相当広い範囲に
わ之って温度勾配を生じてしまう。そこで、サセプタ１
の上端部の相当広範囲にウェハＷ全装着することができ
ず、有効使用面、積が低くなる。また、サセプタ１の上
端部は反応ガスやパージガスによってより強く冷却され
るため、中間部より強く加熱して端部における温度のダ
レ全中央部側へ持込まないようにすることが好ましい。Therefore, a large amount of the temperature near the upper end of the susceptor 1 escapes to the upper end side where there is no RF coil, and as shown by curve T1 in FIG. This results in a temperature gradient. Therefore, susceptor 1
The entire wafer W cannot be mounted over a fairly wide area at the upper end of the wafer, and the effective usable area and area become low. Further, since the upper end of the susceptor 1 is cooled more strongly by the reaction gas and purge gas, it is preferable to heat the upper end of the susceptor 1 more strongly than the middle part to prevent any temperature drop at the end from reaching the center.
本発明に、裁頭角錐形のサセプタの上端をハンガーによ
り吊下し、サセプタの内部にＲＦ’コイル全配置したバ
レル型気相成長装置において、ハンガーとサセプタ上端
との間に、トッププレート部と、このトッププレート部
から垂下するリング部とからなる連結部材全介在させ、
サセプタの上端（ｉ−ＲＦコイルの上端より低い位置に
設定したものである。In the present invention, in a barrel-type vapor phase growth apparatus in which the upper end of a truncated pyramid-shaped susceptor is suspended by a hanger and all RF' coils are arranged inside the susceptor, a top plate portion is provided between the hanger and the upper end of the susceptor. , a connecting member consisting of a ring part hanging from this top plate part is entirely interposed,
The upper end of the susceptor is set at a lower position than the upper end of the i-RF coil.
サセプタの上端がＲＦコイルの上端より低い位置にある
ため、サセプタの上端部が中間部より強（加熱され、サ
セプタと連結部材に切り離されて発生が押えられる。こ
の上端部における温度のダレをなくすことにより、サセ
プタの長手方向の温度分布の均一性がより確実に得られ
る。Since the upper end of the susceptor is located at a lower position than the upper end of the RF coil, the upper end of the susceptor is heated more strongly than the middle part, and the susceptor and the connecting member are separated, suppressing the generation. As a result, the uniformity of the temperature distribution in the longitudinal direction of the susceptor can be more reliably obtained.
以下本発明の一実施例を示す第１図について説明する。 FIG. 1 showing one embodiment of the present invention will be described below.
１０はベースグレート、１１は反応筒、１２はシールリ
ング、１３番エシールプレートで、これらにより反応室
１４全形成している。シールプレート１３上には回転駆
動装置１５が設けられ、これによって回転を与えられる
ハンガー１６が反応室１４内に伸びている。このハンガ
ー１６に石英ガラス製であり、その下端のつばによって
連結部材１７が受止められている。連結部材１７はトッ
ププレート部１７ａとリング部１７ｂとからなっている
。トッププレート部１７ａとリング部１７ｂは石英ガラ
ス、Ｓｉ３Ｎ４やカーボンなどの耐熱・非汚染性の材料
、好ましくは石英ガラスやＳ ｉ ３Ｎ４のように熱伝
導度も低い材料からなり、このリング部１７ｂにサセプ
タ１９が吊下されている。このサセプタ１９ホ上下に伸
びる角錐面部１９ａのほかは、つば１９ｂ を有するの
みの形状である。Reference numeral 10 denotes a base grate, 11 a reaction cylinder, 12 a seal ring, and No. 13 an esseal plate, which form the entire reaction chamber 14. A rotary drive device 15 is provided on the seal plate 13, and a hanger 16 that is rotated thereby extends into the reaction chamber 14. This hanger 16 is made of quartz glass, and a connecting member 17 is received by the brim at its lower end. The connecting member 17 consists of a top plate portion 17a and a ring portion 17b. The top plate portion 17a and the ring portion 17b are made of a heat-resistant, non-contaminating material such as quartz glass, Si3N4, or carbon, preferably a material with low thermal conductivity such as quartz glass or Si3N4. A susceptor 19 is suspended. The susceptor 19 has a shape that only includes a flange 19b except for the pyramidal surface portion 19a extending vertically.
サセプタ１９の内部には、ベースプレート１０上に設置
された石英ガラス製の略つり鐘状をしたコイルカバー２
０が置かれ、この中にＲＦコイル２１が配置されている
。Inside the susceptor 19, a bell-shaped coil cover 2 made of quartz glass is installed on the base plate 10.
0 is placed therein, and the RF coil 21 is placed therein.
前記リング部１７ｂの下端に、前記ＲＦコイル２１の上
端より該ＲＦコイル２１の１〜２巻分下方に位置する長
さに定められ、これに吊下されているサセプタ１９の上
端よりＲＦコイル２１の上端が１〜２巻分上方へ突出し
て位置するようになっている。The length of the susceptor 19 is determined to be one to two turns below the RF coil 21 from the upper end of the RF coil 21, and the RF coil 21 is attached to the lower end of the ring portion 17b. The upper end thereof is positioned so as to protrude upward by one or two turns.
なお、ＹモＦコイル２１の下端もサセプタ１９の下端よ
り同様に１〜２巻分下方に位置するように設定されてい
る。Note that the lower end of the Y-F coil 21 is also set to be located one to two turns below the lower end of the susceptor 19.
シールプレート１３には反応ガスやパージガス全供給す
るノズル２２が設けられ、ベースプレート１０には排気
口２３が設けられている。The seal plate 13 is provided with a nozzle 22 for supplying all of the reaction gas and purge gas, and the base plate 10 is provided with an exhaust port 23.
次いで本装置の作用について説明する。サセプタ１９に
、Ｒ，Ｆコイル２１に印加された高周波電力によって加
熱されるが、ＲＦコイル２１はサセプタ１９の長手方向
の全域に行き渡り、かつその上下端がサセプタ１９の上
下端より突出しているため、ＲＦコイル２１のピッチお
よび端部かもの突出量さらにはＲＦコイル２１とサセプ
タ１９の距離などを調整することにより、サセプタ１９
の長手方向の温度分布を第２図の曲線Ｔ２で示すように
することができる。サセプタ１９とリング部１７ｂは切
り離されているため、リング部１７ｂ’に石英ガラス’
ｐｓｉ３Ｎ４のように熱伝導度が低い材料で形成した場
合はもちろんカーボンのように熱伝導性が高い材料で形
成した場合でも、サセプタ１９の上端からリング部１７
ｂへ逃げる熱量は少なく押えられる。また、リング部１
７ｂ ｋカーボンで形成した場合ＧＳ ’Ｊング部１７
ｂの下端がＲＦコイル２１によって積極的に加熱されて
高温になるため、サセプタ１９の上端からリング部１７
ｂへの熱の逃げは少な（押えも訛る。Next, the operation of this device will be explained. The susceptor 19 is heated by the high frequency power applied to the R and F coils 21, but the RF coil 21 extends over the entire length of the susceptor 19, and its upper and lower ends protrude from the upper and lower ends of the susceptor 19. By adjusting the pitch of the RF coil 21, the amount of protrusion of the end portion, and the distance between the RF coil 21 and the susceptor 19, the susceptor 19 can be adjusted.
The temperature distribution in the longitudinal direction can be made as shown by curve T2 in FIG. Since the susceptor 19 and the ring part 17b are separated, the ring part 17b' is made of quartz glass.
Even if the susceptor 19 is made of a material with low thermal conductivity such as psi3N4 or a material with high thermal conductivity such as carbon, the ring portion 17 can be removed from the upper end of the susceptor 19.
The amount of heat escaping to b can be suppressed to a small amount. In addition, ring part 1
7b When formed with k carbon GS' Jing part 17
Since the lower end of b is actively heated by the RF coil 21 and reaches a high temperature, the ring portion 17 is heated from the upper end of the susceptor 19.
There is little heat escaping to b (the presser foot is also loose).
そこで、サセプタ１９の上端の温度低下は小さく押えら
れ、該上端部の温度が中央部分Ｉ’ｌｌより高い１′頃
向金示すようにすることができる。これによってサセプ
タ１９の端部にだける温度のダレ全防止し、サセプタ１
９の全長にわたる温度の均一性が確保される。なお、リ
ング部１７ｂをカーボンで形成した場合は、トッププレ
ート部１７ａ全石英ガラスやＳ ｉ ３Ｎ４で形成する
ことが好ましい。Therefore, the temperature drop at the upper end of the susceptor 19 can be suppressed to a small level, and the temperature at the upper end can be made to reach around 1' which is higher than the central part I'll. This completely prevents any temperature drop from occurring at the end of the susceptor 19.
Temperature uniformity over the entire length of 9 is ensured. Note that when the ring portion 17b is made of carbon, it is preferable that the top plate portion 17a be made of all-quartz glass or Si 3N4.
連
前述した実施例はＸ結部材１７ｔ−トッププレートｏ［
５１７ａとリング部１７ｂに分割して形成した例を示し
たが、一体重に形成してもよいことは言うまでもない。The above-mentioned embodiment has an X-connection member 17t-top plate o[
Although an example has been shown in which the ring portion 517a and the ring portion 17b are formed separately, it goes without saying that the ring portion 517a and the ring portion 17b may be formed in one piece.
以上述べたように本発明によれば、サセプタの端部の温
度のダレを防止でき、これによってサセプタの長手方向
の温度の均一性をより高い精度で比較的簡単に得ること
ができる。As described above, according to the present invention, it is possible to prevent the temperature at the end of the susceptor from sagging, and thereby the temperature uniformity in the longitudinal direction of the susceptor can be obtained with higher precision and relatively easily.
第１図は不発明の一実施例を示す概要断面図、第２図は
本発明による装置と従来装置のサセプタ長手方向のサセ
プタ表面温度分布全示すグラフ、第３図は従来装置の概
要断面図である。
１６・・・ハンガー、 １７・・・連結部材、 １７ａ
・・・トッププレート部、 １７ｂ・・・リング部、
１９・・・サセプタ、２０・・・コイルカバー、２１・
・・ＲＦコイル。FIG. 1 is a schematic sectional view showing an embodiment of the invention, FIG. 2 is a graph showing the entire susceptor surface temperature distribution in the longitudinal direction of the susceptor of the device according to the present invention and the conventional device, and FIG. 3 is a schematic sectional view of the conventional device. It is. 16... Hanger, 17... Connecting member, 17a
...Top plate part, 17b...Ring part,
19... Susceptor, 20... Coil cover, 21.
...RF coil.
Claims (1)
し、該サセプタの内部にＲＦコイルを配置したバレル型
気相成長装置において、前記ハンガーとサセプタ上端と
の間にトッププレート部と、同トッププレート部から垂
下するリング部とからなる連結部材を介在させ、前記サ
セプタの上端を前記ＲＦコイルの上端より低い位置に設
定したことを特徴とするバレル型気相成長装置。 ２、連結部材が、耐熱・非汚染性の材料で形成されてい
ることを特徴とする特許請求の範囲第１項記載のバレル
型気相成長装置。 ３、連結部材のリング部が、熱伝導度が低く耐熱・非汚
染性の絶縁材料で形成されていることを特徴とする特許
請求の範囲第１項記載のバレル型気相成長装置。 ４、連結部材のトッププレート部が石英で形成され、リ
ング部がカーボンで形成されていることを特徴とする特
許請求の範囲第１項記載のバレル型気相成長装置。[Scope of Claims] 1. In a barrel-type vapor phase growth apparatus in which the upper end of a susceptor in the shape of a truncated pyramid is suspended by a hanger and an RF coil is disposed inside the susceptor, there is no space between the hanger and the upper end of the susceptor. A barrel-type vapor phase growth apparatus characterized in that a connecting member consisting of a top plate part and a ring part hanging from the top plate part is interposed, and the upper end of the susceptor is set at a lower position than the upper end of the RF coil. . 2. The barrel-type vapor phase growth apparatus according to claim 1, wherein the connecting member is made of a heat-resistant and non-contaminating material. 3. The barrel-type vapor phase growth apparatus according to claim 1, wherein the ring portion of the connecting member is made of a heat-resistant, non-contaminating insulating material with low thermal conductivity. 4. The barrel type vapor phase growth apparatus according to claim 1, wherein the top plate portion of the connecting member is made of quartz, and the ring portion is made of carbon.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61-62590 | 1986-03-20 | ||
| JP6259086 | 1986-03-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6312128A true JPS6312128A (en) | 1988-01-19 |
Family
ID=13204687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62055829A Pending JPS6312128A (en) | 1986-03-20 | 1987-03-11 | Barrel type vapor growth apparatus |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4794220A (en) |
| JP (1) | JPS6312128A (en) |
| KR (1) | KR900004440B1 (en) |
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|---|---|---|---|---|
| US5178681A (en) * | 1991-01-29 | 1993-01-12 | Applied Materials, Inc. | Suspension system for semiconductor reactors |
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| CN104746037B (en) * | 2013-12-29 | 2017-07-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and MOCVD device |
| US9972740B2 (en) | 2015-06-07 | 2018-05-15 | Tesla, Inc. | Chemical vapor deposition tool and process for fabrication of photovoltaic structures |
| US9748434B1 (en) | 2016-05-24 | 2017-08-29 | Tesla, Inc. | Systems, method and apparatus for curing conductive paste |
| US9954136B2 (en) | 2016-08-03 | 2018-04-24 | Tesla, Inc. | Cassette optimized for an inline annealing system |
| US10115856B2 (en) | 2016-10-31 | 2018-10-30 | Tesla, Inc. | System and method for curing conductive paste using induction heating |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3384049A (en) * | 1966-10-27 | 1968-05-21 | Emil R. Capita | Vapor deposition apparatus including centrifugal force substrate-holding means |
| US3699298A (en) * | 1971-12-23 | 1972-10-17 | Western Electric Co | Methods and apparatus for heating and/or coating articles |
| US4496828A (en) * | 1983-07-08 | 1985-01-29 | Ultra Carbon Corporation | Susceptor assembly |
| US4579080A (en) * | 1983-12-09 | 1986-04-01 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
-
1987
- 1987-03-11 JP JP62055829A patent/JPS6312128A/en active Pending
- 1987-03-12 KR KR1019870002189A patent/KR900004440B1/en not_active IP Right Cessation
- 1987-03-19 US US07/027,727 patent/US4794220A/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5178681A (en) * | 1991-01-29 | 1993-01-12 | Applied Materials, Inc. | Suspension system for semiconductor reactors |
Also Published As
| Publication number | Publication date |
|---|---|
| KR900004440B1 (en) | 1990-06-25 |
| KR870009607A (en) | 1987-10-27 |
| US4794220A (en) | 1988-12-27 |
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