JPS6312128A - Barrel type vapor growth apparatus - Google Patents

Barrel type vapor growth apparatus

Info

Publication number
JPS6312128A
JPS6312128A JP62055829A JP5582987A JPS6312128A JP S6312128 A JPS6312128 A JP S6312128A JP 62055829 A JP62055829 A JP 62055829A JP 5582987 A JP5582987 A JP 5582987A JP S6312128 A JPS6312128 A JP S6312128A
Authority
JP
Japan
Prior art keywords
susceptor
coil
growth apparatus
type vapor
top plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62055829A
Other languages
Japanese (ja)
Inventor
Isao Sekiya
関谷 功
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Machine Co Ltd
Original Assignee
Toshiba Machine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Machine Co Ltd filed Critical Toshiba Machine Co Ltd
Publication of JPS6312128A publication Critical patent/JPS6312128A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00Heating by electric, magnetic or electromagnetic fields
    • H05B6/64Heating using microwaves
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C23C16/4588Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
    • H01L21/205

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)

Abstract

PURPOSE:To prevent the decrease in temperature at the end part of a susceptor and to make the temperature of the susceptor uniform in the longitudinal direction, by providing a top plate part and a linking member, which comprises a ring part suspended from the top plate part, between a hanger and the top end of the susceptor. CONSTITUTION:The top end of truncated susceptor 19 is suspented from a hanger 16. An RF coil 21 is arranged in the susceptor 19. A linking member 17, which comprises a top plate part 17a and a ring part 17b suspended from the plate part 17a, is provided between the hanger 16 and the susceptor 19. Since the top end of the susceptor 19 is positioned lower than the top end of the coil 21, the top end part of the susceptor 19 is heated at a temperature higher than that of the intermediate part. Therefore, the decrease in temperature at the top end part of the susceptor 19 is prevented, and the uniform temperature distribution in the susceptor 19 in the longitudinal direction can be obtained.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、バレル型気相成長装置に係り、特にサセプタ
の温度分布の改善に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a barrel-type vapor phase growth apparatus, and particularly to improving the temperature distribution of a susceptor.

〔従来技術〕[Prior art]

バレル型気相成長装置として、第3図に示すように、外
周に複数の平面を有する裁頭角錐形のサセプタ1をトッ
ププレート2に吊下し、このトッププレート2をハンガ
ー3によって支持し、サセプタ1の内部にRFコイル4
全設けて、サセプタ1’を加熱する方式が提案されてい
る。
As a barrel type vapor phase growth apparatus, as shown in FIG. 3, a truncated pyramid-shaped susceptor 1 having a plurality of flat surfaces on the outer periphery is suspended from a top plate 2, and this top plate 2 is supported by a hanger 3. RF coil 4 inside susceptor 1
A method has been proposed in which all the susceptors are provided and the susceptor 1' is heated.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

ところで、前記のように、サセプタ1′(il−その内
部に設けたRFコイル4で加熱する場合、トッププレー
ト2があるため、11(、Fコイル4の上端はサセプタ
1の上端より下に位置することになる。
By the way, as mentioned above, when heating with the RF coil 4 provided inside the susceptor 1'(il), the top end of the F coil 4 is located below the top end of the susceptor 1 because of the top plate 2. I will do it.

このため、サセプタ1の上端部寄りの温度に、RFコイ
ルのない上端側へ多量に逃げ、第2図の曲線T1で示す
ように、低下し、サセプタ1の上端から相当広い範囲に
わ之って温度勾配を生じてしまう。そこで、サセプタ1
の上端部の相当広範囲にウェハW全装着することができ
ず、有効使用面、積が低くなる。また、サセプタ1の上
端部は反応ガスやパージガスによってより強く冷却され
るため、中間部より強く加熱して端部における温度のダ
レ全中央部側へ持込まないようにすることが好ましい。
Therefore, a large amount of the temperature near the upper end of the susceptor 1 escapes to the upper end side where there is no RF coil, and as shown by curve T1 in FIG. This results in a temperature gradient. Therefore, susceptor 1
The entire wafer W cannot be mounted over a fairly wide area at the upper end of the wafer, and the effective usable area and area become low. Further, since the upper end of the susceptor 1 is cooled more strongly by the reaction gas and purge gas, it is preferable to heat the upper end of the susceptor 1 more strongly than the middle part to prevent any temperature drop at the end from reaching the center.

〔問題点を解決するための手段〕[Means for solving problems]

本発明に、裁頭角錐形のサセプタの上端をハンガーによ
り吊下し、サセプタの内部にRF’コイル全配置したバ
レル型気相成長装置において、ハンガーとサセプタ上端
との間に、トッププレート部と、このトッププレート部
から垂下するリング部とからなる連結部材全介在させ、
サセプタの上端(i−RFコイルの上端より低い位置に
設定したものである。
In the present invention, in a barrel-type vapor phase growth apparatus in which the upper end of a truncated pyramid-shaped susceptor is suspended by a hanger and all RF' coils are arranged inside the susceptor, a top plate portion is provided between the hanger and the upper end of the susceptor. , a connecting member consisting of a ring part hanging from this top plate part is entirely interposed,
The upper end of the susceptor is set at a lower position than the upper end of the i-RF coil.

〔作 用〕[For production]

サセプタの上端がRFコイルの上端より低い位置にある
ため、サセプタの上端部が中間部より強(加熱され、サ
セプタと連結部材に切り離されて発生が押えられる。こ
の上端部における温度のダレをなくすことにより、サセ
プタの長手方向の温度分布の均一性がより確実に得られ
る。
Since the upper end of the susceptor is located at a lower position than the upper end of the RF coil, the upper end of the susceptor is heated more strongly than the middle part, and the susceptor and the connecting member are separated, suppressing the generation. As a result, the uniformity of the temperature distribution in the longitudinal direction of the susceptor can be more reliably obtained.

〔実施例〕〔Example〕

以下本発明の一実施例を示す第1図について説明する。 FIG. 1 showing one embodiment of the present invention will be described below.

10はベースグレート、11は反応筒、12はシールリ
ング、13番エシールプレートで、これらにより反応室
14全形成している。シールプレート13上には回転駆
動装置15が設けられ、これによって回転を与えられる
ハンガー16が反応室14内に伸びている。このハンガ
ー16に石英ガラス製であり、その下端のつばによって
連結部材17が受止められている。連結部材17はトッ
ププレート部17aとリング部17bとからなっている
。トッププレート部17aとリング部17bは石英ガラ
ス、Si3N4やカーボンなどの耐熱・非汚染性の材料
、好ましくは石英ガラスやS i 3N4のように熱伝
導度も低い材料からなり、このリング部17bにサセプ
タ19が吊下されている。このサセプタ19ホ上下に伸
びる角錐面部19aのほかは、つば19b を有するの
みの形状である。
Reference numeral 10 denotes a base grate, 11 a reaction cylinder, 12 a seal ring, and No. 13 an esseal plate, which form the entire reaction chamber 14. A rotary drive device 15 is provided on the seal plate 13, and a hanger 16 that is rotated thereby extends into the reaction chamber 14. This hanger 16 is made of quartz glass, and a connecting member 17 is received by the brim at its lower end. The connecting member 17 consists of a top plate portion 17a and a ring portion 17b. The top plate portion 17a and the ring portion 17b are made of a heat-resistant, non-contaminating material such as quartz glass, Si3N4, or carbon, preferably a material with low thermal conductivity such as quartz glass or Si3N4. A susceptor 19 is suspended. The susceptor 19 has a shape that only includes a flange 19b except for the pyramidal surface portion 19a extending vertically.

サセプタ19の内部には、ベースプレート10上に設置
された石英ガラス製の略つり鐘状をしたコイルカバー2
0が置かれ、この中にRFコイル21が配置されている
Inside the susceptor 19, a bell-shaped coil cover 2 made of quartz glass is installed on the base plate 10.
0 is placed therein, and the RF coil 21 is placed therein.

前記リング部17bの下端に、前記RFコイル21の上
端より該RFコイル21の1〜2巻分下方に位置する長
さに定められ、これに吊下されているサセプタ19の上
端よりRFコイル21の上端が1〜2巻分上方へ突出し
て位置するようになっている。
The length of the susceptor 19 is determined to be one to two turns below the RF coil 21 from the upper end of the RF coil 21, and the RF coil 21 is attached to the lower end of the ring portion 17b. The upper end thereof is positioned so as to protrude upward by one or two turns.

なお、YモFコイル21の下端もサセプタ19の下端よ
り同様に1〜2巻分下方に位置するように設定されてい
る。
Note that the lower end of the Y-F coil 21 is also set to be located one to two turns below the lower end of the susceptor 19.

シールプレート13には反応ガスやパージガス全供給す
るノズル22が設けられ、ベースプレート10には排気
口23が設けられている。
The seal plate 13 is provided with a nozzle 22 for supplying all of the reaction gas and purge gas, and the base plate 10 is provided with an exhaust port 23.

次いで本装置の作用について説明する。サセプタ19に
、R,Fコイル21に印加された高周波電力によって加
熱されるが、RFコイル21はサセプタ19の長手方向
の全域に行き渡り、かつその上下端がサセプタ19の上
下端より突出しているため、RFコイル21のピッチお
よび端部かもの突出量さらにはRFコイル21とサセプ
タ19の距離などを調整することにより、サセプタ19
の長手方向の温度分布を第2図の曲線T2で示すように
することができる。サセプタ19とリング部17bは切
り離されているため、リング部17b’に石英ガラス’
psi3N4のように熱伝導度が低い材料で形成した場
合はもちろんカーボンのように熱伝導性が高い材料で形
成した場合でも、サセプタ19の上端からリング部17
bへ逃げる熱量は少なく押えられる。また、リング部1
7b kカーボンで形成した場合GS ’Jング部17
bの下端がRFコイル21によって積極的に加熱されて
高温になるため、サセプタ19の上端からリング部17
bへの熱の逃げは少な(押えも訛る。
Next, the operation of this device will be explained. The susceptor 19 is heated by the high frequency power applied to the R and F coils 21, but the RF coil 21 extends over the entire length of the susceptor 19, and its upper and lower ends protrude from the upper and lower ends of the susceptor 19. By adjusting the pitch of the RF coil 21, the amount of protrusion of the end portion, and the distance between the RF coil 21 and the susceptor 19, the susceptor 19 can be adjusted.
The temperature distribution in the longitudinal direction can be made as shown by curve T2 in FIG. Since the susceptor 19 and the ring part 17b are separated, the ring part 17b' is made of quartz glass.
Even if the susceptor 19 is made of a material with low thermal conductivity such as psi3N4 or a material with high thermal conductivity such as carbon, the ring portion 17 can be removed from the upper end of the susceptor 19.
The amount of heat escaping to b can be suppressed to a small amount. In addition, ring part 1
7b When formed with k carbon GS' Jing part 17
Since the lower end of b is actively heated by the RF coil 21 and reaches a high temperature, the ring portion 17 is heated from the upper end of the susceptor 19.
There is little heat escaping to b (the presser foot is also loose).

そこで、サセプタ19の上端の温度低下は小さく押えら
れ、該上端部の温度が中央部分I’llより高い1′頃
向金示すようにすることができる。これによってサセプ
タ19の端部にだける温度のダレ全防止し、サセプタ1
9の全長にわたる温度の均一性が確保される。なお、リ
ング部17bをカーボンで形成した場合は、トッププレ
ート部17a全石英ガラスやS i 3N4で形成する
ことが好ましい。
Therefore, the temperature drop at the upper end of the susceptor 19 can be suppressed to a small level, and the temperature at the upper end can be made to reach around 1' which is higher than the central part I'll. This completely prevents any temperature drop from occurring at the end of the susceptor 19.
Temperature uniformity over the entire length of 9 is ensured. Note that when the ring portion 17b is made of carbon, it is preferable that the top plate portion 17a be made of all-quartz glass or Si 3N4.

連 前述した実施例はX結部材17t−トッププレートo[
517aとリング部17bに分割して形成した例を示し
たが、一体重に形成してもよいことは言うまでもない。
The above-mentioned embodiment has an X-connection member 17t-top plate o[
Although an example has been shown in which the ring portion 517a and the ring portion 17b are formed separately, it goes without saying that the ring portion 517a and the ring portion 17b may be formed in one piece.

〔発明の効果〕〔Effect of the invention〕

以上述べたように本発明によれば、サセプタの端部の温
度のダレを防止でき、これによってサセプタの長手方向
の温度の均一性をより高い精度で比較的簡単に得ること
ができる。
As described above, according to the present invention, it is possible to prevent the temperature at the end of the susceptor from sagging, and thereby the temperature uniformity in the longitudinal direction of the susceptor can be obtained with higher precision and relatively easily.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は不発明の一実施例を示す概要断面図、第2図は
本発明による装置と従来装置のサセプタ長手方向のサセ
プタ表面温度分布全示すグラフ、第3図は従来装置の概
要断面図である。 16・・・ハンガー、 17・・・連結部材、 17a
・・・トッププレート部、 17b・・・リング部、 
19・・・サセプタ、20・・・コイルカバー、21・
・・RFコイル。
FIG. 1 is a schematic sectional view showing an embodiment of the invention, FIG. 2 is a graph showing the entire susceptor surface temperature distribution in the longitudinal direction of the susceptor of the device according to the present invention and the conventional device, and FIG. 3 is a schematic sectional view of the conventional device. It is. 16... Hanger, 17... Connecting member, 17a
...Top plate part, 17b...Ring part,
19... Susceptor, 20... Coil cover, 21.
...RF coil.

Claims (1)

【特許請求の範囲】 1、裁頭角錐形のサセプタの上端をハンガーにより吊下
し、該サセプタの内部にRFコイルを配置したバレル型
気相成長装置において、前記ハンガーとサセプタ上端と
の間にトッププレート部と、同トッププレート部から垂
下するリング部とからなる連結部材を介在させ、前記サ
セプタの上端を前記RFコイルの上端より低い位置に設
定したことを特徴とするバレル型気相成長装置。 2、連結部材が、耐熱・非汚染性の材料で形成されてい
ることを特徴とする特許請求の範囲第1項記載のバレル
型気相成長装置。 3、連結部材のリング部が、熱伝導度が低く耐熱・非汚
染性の絶縁材料で形成されていることを特徴とする特許
請求の範囲第1項記載のバレル型気相成長装置。 4、連結部材のトッププレート部が石英で形成され、リ
ング部がカーボンで形成されていることを特徴とする特
許請求の範囲第1項記載のバレル型気相成長装置。
[Scope of Claims] 1. In a barrel-type vapor phase growth apparatus in which the upper end of a susceptor in the shape of a truncated pyramid is suspended by a hanger and an RF coil is disposed inside the susceptor, there is no space between the hanger and the upper end of the susceptor. A barrel-type vapor phase growth apparatus characterized in that a connecting member consisting of a top plate part and a ring part hanging from the top plate part is interposed, and the upper end of the susceptor is set at a lower position than the upper end of the RF coil. . 2. The barrel-type vapor phase growth apparatus according to claim 1, wherein the connecting member is made of a heat-resistant and non-contaminating material. 3. The barrel-type vapor phase growth apparatus according to claim 1, wherein the ring portion of the connecting member is made of a heat-resistant, non-contaminating insulating material with low thermal conductivity. 4. The barrel type vapor phase growth apparatus according to claim 1, wherein the top plate portion of the connecting member is made of quartz, and the ring portion is made of carbon.
JP62055829A 1986-03-20 1987-03-11 Barrel type vapor growth apparatus Pending JPS6312128A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61-62590 1986-03-20
JP6259086 1986-03-20

Publications (1)

Publication Number Publication Date
JPS6312128A true JPS6312128A (en) 1988-01-19

Family

ID=13204687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62055829A Pending JPS6312128A (en) 1986-03-20 1987-03-11 Barrel type vapor growth apparatus

Country Status (3)

Country Link
US (1) US4794220A (en)
JP (1) JPS6312128A (en)
KR (1) KR900004440B1 (en)

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KR900004440B1 (en) 1990-06-25
KR870009607A (en) 1987-10-27
US4794220A (en) 1988-12-27

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