JPS625995B2 - - Google Patents
Info
- Publication number
- JPS625995B2 JPS625995B2 JP56113621A JP11362181A JPS625995B2 JP S625995 B2 JPS625995 B2 JP S625995B2 JP 56113621 A JP56113621 A JP 56113621A JP 11362181 A JP11362181 A JP 11362181A JP S625995 B2 JPS625995 B2 JP S625995B2
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- reaction
- induction heating
- heating coil
- substrate wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000006698 induction Effects 0.000 claims description 31
- 238000010438 heat treatment Methods 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 24
- 238000001947 vapour-phase growth Methods 0.000 claims description 19
- 238000002955 isolation Methods 0.000 claims description 14
- 239000012495 reaction gas Substances 0.000 claims description 8
- 239000012535 impurity Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
本発明は、気相成長装置の改良に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a vapor phase growth apparatus.
従来の気相成長装置は、反応ベルジヤー内で回
転するサセプタ上に基板ウエーハを載置し、前記
反応ベルジヤー内に反応ガスを供給し、該反応ベ
ルジヤー内に設けた加熱ヒータで基板ウエーハを
加熱しつつ該基板ウエーハを気相成長させてい
た。 In a conventional vapor phase growth apparatus, a substrate wafer is placed on a susceptor rotating within a reaction bell gear, a reaction gas is supplied into the reaction bell gear, and a heater provided in the reaction bell gear heats the substrate wafer. At the same time, the substrate wafer was subjected to vapor phase growth.
しかしながら、このような構成では加熱ヒータ
からの不純物が基板ウエーハに付着し、良好な半
導体を得ることができない欠点があつた。 However, such a configuration has the drawback that impurities from the heater adhere to the substrate wafer, making it impossible to obtain a good semiconductor.
これを改善するためには、加熱ヒータを隔離手
段で反応ベルジヤー内の雰囲気から隔離すれば良
いが、このようにすると、隔離手段の介在により
加熱ヒータの加熱効率が低下してしまう欠点があ
る。 In order to improve this problem, the heater can be isolated from the atmosphere inside the reaction bell jar using an isolation means, but if this is done, there is a drawback that the heating efficiency of the heater is reduced due to the intervention of the isolation means.
そこで、隔離手段を介して加熱しても加熱効率
が低下しないヒータとして、誘導加熱コイルを用
いた気相成長装置が提案されている。この成長装
置は、第１図に示すように、反応ベルジヤー１内
のサセプタ２上に基板ウエーハ３を載置し、この
サセプタ２を回転軸４に支持させて回転させつ
つ、石英等の隔離手段１１で反応ベルジヤー１内
雰囲気から隔離して該サセプタ２の下に配置した
誘導加熱コイル５に高周波発振器６より高周波電
流を流し、サセプタ２を誘導加熱することにより
その熱を基板ウエーハ３に伝えて基板ウエーハ３
を加熱し、且つ回転軸４内のガス通路７より反応
ベルジヤー１内に反応ガス（例えば、H2とSiCl4
の混合ガス）を送り込んで基板ウエーハ３の表面
に気相成長を生じさせている。 Therefore, a vapor phase growth apparatus using an induction heating coil has been proposed as a heater whose heating efficiency does not decrease even when heating is performed through an isolation means. As shown in FIG. 1, in this growth apparatus, a substrate wafer 3 is placed on a susceptor 2 in a reaction bell jar 1, and while the susceptor 2 is supported and rotated by a rotating shaft 4, isolation means such as quartz is used. At step 11, a high frequency current is applied from a high frequency oscillator 6 to an induction heating coil 5 placed under the susceptor 2 isolated from the atmosphere inside the reaction bell gear 1, and the susceptor 2 is heated by induction, thereby transmitting the heat to the substrate wafer 3. Substrate wafer 3
is heated, and a reaction gas (for example, H 2 and SiCl 4
A mixed gas) is fed to cause vapor phase growth on the surface of the substrate wafer 3.
このように誘導加熱コイル５を用いると、隔離
手段１１を用いても誘導加熱ゆえサセプタ２を効
率よく加熱できる。また、隔離手段１１の存在に
より、誘導加熱コイル５からの不純物が反応ベル
ジヤー１内に出なくなり、基板ウエーハ３に不純
物が付着しなくなり、良好な半導体を得ることが
できる。 When the induction heating coil 5 is used in this manner, the susceptor 2 can be efficiently heated due to induction heating even if the isolation means 11 is used. Further, due to the presence of the isolation means 11, impurities from the induction heating coil 5 do not come out into the reaction bell gear 1, and impurities do not adhere to the substrate wafer 3, so that a good semiconductor can be obtained.
しかしながら、このような従来の誘導加熱コイ
ルを用いた気相成長装置では、サセプタ２と基板
ウエーハ３の温度差が出て、基板ウエーハ３上に
スリツプバンド等の結晶欠陥が発生する原因にな
つていた。また高周波発振器６の周波数を下げて
行くと、例えば周波数が30KHzになると、サセ
プタ２が誘導加熱コイル５に流れる高周波電流の
力により浮上する欠点があつた。 However, in such a conventional vapor phase growth apparatus using an induction heating coil, a temperature difference occurs between the susceptor 2 and the substrate wafer 3, which causes crystal defects such as slip bands to occur on the substrate wafer 3. Ta. Further, when the frequency of the high-frequency oscillator 6 is lowered, for example, when the frequency reaches 30 KHz, there is a drawback that the susceptor 2 floats due to the force of the high-frequency current flowing through the induction heating coil 5.
本発明の目的は、誘導加熱コイルを用いている
にも拘らずスリツプバンド等の結晶欠陥の発生を
防止でき、且つサセプタの浮上を抑制できる気相
成長装置を提供するにある。 SUMMARY OF THE INVENTION An object of the present invention is to provide a vapor phase growth apparatus that can prevent the occurrence of crystal defects such as slip bands, even though an induction heating coil is used, and can suppress the floating of a susceptor.
本発明の気相成長装置は、反応ベルジヤー内の
雰囲気から隔離手段で隔離した構造の誘導加熱コ
イルを、サセプタの上方に配設し、基板ウエーハ
側よりサセプタを誘導加熱することにより、基板
ウエーハにこの基板ウエーハをサセプタの側に押
しつける電磁力を作用させるようにしたものであ
る。 The vapor phase growth apparatus of the present invention has an induction heating coil separated from the atmosphere in the reaction bell jar by an isolation means above the susceptor, and heats the susceptor from the substrate wafer side by induction. An electromagnetic force is applied to press the substrate wafer against the susceptor.
以下本発明の実施例を図面を参照して詳細に説
明する。第２図は本発明の第１実施例を示したも
のである。本実施例の気相成長装置においては、
反応ベルジヤー１内にサセプタ２が水平に配設さ
れ、このサセプタ２上に基板ウエーハ３が載置さ
れて加熱を受けるようになつている。サセプタ２
は反応ベルジヤー１の底板１Ａを貫通する回転軸
４に支持されている。反応ベルジヤー１の上部に
は反応ガス供給管８が貫通して取付けられ、その
先端の供給ヘツド８Ａから反応ベルジヤー１内に
反応ガスの供給が行われるようになつている。反
応ベルジヤー１の底板１Ａには反応ガス排出口９
が設けれている。基板ウエーハ３の上面に対向し
て反応ベルジヤー１の外部上方に誘導加熱コイル
５が配設されて支持体１０に支持されている。こ
の場合、反応ベルジヤー１が、該反応ベルジヤー
１内の雰囲気から誘導加熱コイル５を隔離する隔
離手段１１を兼ねている。支持体１０は本実施例
では反応ベルジヤー１の底板１Ａに取付けられて
いる。誘導加熱コイル５には高周波発振器６が接
続されている。 Embodiments of the present invention will be described in detail below with reference to the drawings. FIG. 2 shows a first embodiment of the present invention. In the vapor phase growth apparatus of this example,
A susceptor 2 is disposed horizontally within the reaction bell gear 1, and a substrate wafer 3 is placed on the susceptor 2 to be heated. Susceptor 2
is supported by a rotating shaft 4 passing through the bottom plate 1A of the reaction bell jar 1. A reaction gas supply pipe 8 is attached to the upper part of the reaction bell gear 1 so as to pass therethrough, and the reaction gas is supplied into the reaction bell gear 1 from a supply head 8A at the tip thereof. A reaction gas outlet 9 is provided on the bottom plate 1A of the reaction bell jar 1.
is provided. An induction heating coil 5 is disposed outside and above the reaction bell gear 1, facing the upper surface of the substrate wafer 3, and is supported by a support 10. In this case, the reaction bell gear 1 also serves as isolation means 11 for isolating the induction heating coil 5 from the atmosphere inside the reaction bell gear 1. The support 10 is attached to the bottom plate 1A of the reaction bell jar 1 in this embodiment. A high frequency oscillator 6 is connected to the induction heating coil 5.
このような気相成長装置においては、誘導加熱
コイル５に高周波電流を流すと、基板ウエーハ３
をサセプタ２の方向に押し付ける電磁力が働き、
基板ウエーハ３とサセプタ２との密着性が良くな
る。かかる状態で、サセプタ２が誘導加熱されて
温度上昇すると、その上の各基板ウエーハ３は熱
伝導により均一に温度上昇し、スリツプバンド等
の結晶欠陥のない気相成長ができる。また、サセ
プタ２の上方に誘導加熱コイル５が存在するの
で、サセプタ２に対して下向きの電磁力が作用
し、サセプタ２は浮上することはない。 In such a vapor phase growth apparatus, when a high frequency current is passed through the induction heating coil 5, the substrate wafer 3
An electromagnetic force acts to push the susceptor 2 toward the susceptor 2,
Adhesion between the substrate wafer 3 and the susceptor 2 is improved. In this state, when the susceptor 2 is heated by induction and its temperature rises, the temperature of each substrate wafer 3 thereon rises uniformly due to thermal conduction, allowing vapor phase growth without crystal defects such as slip bands. Further, since the induction heating coil 5 is present above the susceptor 2, a downward electromagnetic force acts on the susceptor 2, and the susceptor 2 does not float.
第３図は本発明の第２実施例を示したものであ
る。本実施例の気相成長装置においては、誘導加
熱コイル５をサセプタ２の上方に配設した点は第
１実施例と同様であるが、本実施例ではこの誘導
加熱コイル５を反応ベルジヤー１の中に入れた点
で相違している。この場合には、石英等よりなる
隔離手段１１も反応ベルジヤー１内に設置されて
いる。このようにすると、誘導加熱コイル５から
の不純物が反応ベルジヤー１内の雰囲気中に出る
のを防止できると共に、誘導加熱コイル５が反応
ガスで腐蝕されるのも防止できる。 FIG. 3 shows a second embodiment of the invention. The vapor phase growth apparatus of this embodiment is similar to the first embodiment in that the induction heating coil 5 is disposed above the susceptor 2; The difference is that it is placed inside. In this case, isolation means 11 made of quartz or the like are also installed within the reaction bell gear 1. In this way, it is possible to prevent impurities from the induction heating coil 5 from coming out into the atmosphere inside the reaction bell gear 1, and it is also possible to prevent the induction heating coil 5 from being corroded by the reaction gas.
このようにしても第１実施例と同様の効果を得
ることができる。 Even in this case, the same effects as in the first embodiment can be obtained.
以上説明したように本発明の気相成長装置にお
いては、隔離手段で反応ベルジヤー内雰囲気から
隔離した誘導加熱コイルをサセプタの上方に配設
し、サセプタ上面の基板ウエーハに気相成長を行
わせるようにしたので、基板ウエーハをサセプタ
に押しつける電磁力が働き、基板ウエーハとサセ
プタとの密着性が良くなり、誘導加熱されたサセ
プタにより均一に各基板ウエーハが加熱され、ス
リツプバンド等の結晶欠陥のない気相成長を行わ
せることができる。従つて、本発明によれば誘導
加熱による気相成長装置でも歩留及び生産性を向
上させることができる。また、本発明によれば、
サセプタには誘導加熱コイルにより下向きの電磁
力が作用し、サセプタの浮上を防止することがで
きる。更に本発明では、誘導加熱コイルを反応ベ
ルジヤー内の雰囲気から隔離手段で隔離している
ので、誘導加熱コイルからの不純物が反応ベルジ
ヤー内の雰囲気中に出るのを防止して良好な半導
体を得ることができると共に誘導加熱コイルが反
応ベルジヤー内の反応ガスにより腐蝕されるのも
防止することができる。 As explained above, in the vapor phase growth apparatus of the present invention, the induction heating coil isolated from the atmosphere inside the reaction bellier by the isolation means is disposed above the susceptor, and the substrate wafer on the upper surface of the susceptor is subjected to vapor phase growth. As a result, the electromagnetic force that presses the substrate wafer against the susceptor works, improving the adhesion between the substrate wafer and the susceptor, and each substrate wafer is uniformly heated by the induction heated susceptor, resulting in no crystal defects such as slip bands. Vapor phase growth can be performed. Therefore, according to the present invention, yield and productivity can be improved even in a vapor phase growth apparatus using induction heating. Further, according to the present invention,
A downward electromagnetic force is applied to the susceptor by the induction heating coil, thereby preventing the susceptor from floating. Further, in the present invention, since the induction heating coil is isolated from the atmosphere inside the reaction bell gear by the isolation means, impurities from the induction heating coil are prevented from coming out into the atmosphere inside the reaction bell gear, thereby obtaining a good semiconductor. At the same time, it is possible to prevent the induction heating coil from being corroded by the reaction gas in the reaction bell jar.
第１図は従来の気相成長装置の一実施例を示す
縦断面図、第２図及び第３図は本発明に係る気相
成長装置の第１、第２実施例の縦断面図である。
１…反応ベルジヤー、２…サセプタ、３…基板
ウエーハ、４…回転軸、５…誘導加熱コイル、１
１…隔離手段。
FIG. 1 is a longitudinal sectional view showing an embodiment of a conventional vapor phase growth apparatus, and FIGS. 2 and 3 are longitudinal sectional views of first and second embodiments of the vapor phase growth apparatus according to the present invention. . DESCRIPTION OF SYMBOLS 1... Reaction bell gear, 2... Susceptor, 3... Substrate wafer, 4... Rotating shaft, 5... Induction heating coil, 1
1. Isolation measures.
Claims (1)
板ウエーハを載置し、前記反応ベルジヤー内に反
応ガスを供給し、隔離手段で前記反応ベルジヤー
内の雰囲気から隔離した誘導加熱コイルで前記サ
セプタを誘導加熱しつつ前記基板ウエーハを気相
成長させる気相成長装置において、前記隔離手段
で前記反応ベルジヤー内の雰囲気から隔離された
前記誘導加熱コイルは前記サセプタの上方に配置
されていることを特徴とする気相成長装置。1. A substrate wafer is placed on a susceptor rotating within a reaction bellgear, a reaction gas is supplied into the reaction bellgear, and the susceptor is induction heated with an induction heating coil isolated from the atmosphere in the reaction bellgear by an isolation means. In the vapor phase growth apparatus, the induction heating coil is isolated from the atmosphere in the reaction bell jar by the isolation means and is disposed above the susceptor. growth equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11362181A JPS5814945A (en) | 1981-07-22 | 1981-07-22 | Vapor growth apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11362181A JPS5814945A (en) | 1981-07-22 | 1981-07-22 | Vapor growth apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5814945A JPS5814945A (en) | 1983-01-28 |
| JPS625995B2 true JPS625995B2 (en) | 1987-02-07 |
Family
ID=14616850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11362181A Granted JPS5814945A (en) | 1981-07-22 | 1981-07-22 | Vapor growth apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5814945A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61246370A (en) * | 1985-04-23 | 1986-11-01 | Sakaguchi Dennetsu Kk | Gaseous phase chemical reaction furnace |
| JPS6347364A (en) * | 1986-08-15 | 1988-02-29 | Nippon Telegr & Teleph Corp <Ntt> | Method and apparatus for chemical vapor deposition |
| JP4366979B2 (en) * | 2003-04-18 | 2009-11-18 | 株式会社デンソー | CVD equipment |
| JP2005294606A (en) * | 2004-04-01 | 2005-10-20 | Ngk Insulators Ltd | Wafer heating unit |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57110665A (en) * | 1980-12-26 | 1982-07-09 | Seiko Epson Corp | Heating mechanism for vacuum apparatus |
-
1981
- 1981-07-22 JP JP11362181A patent/JPS5814945A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57110665A (en) * | 1980-12-26 | 1982-07-09 | Seiko Epson Corp | Heating mechanism for vacuum apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5814945A (en) | 1983-01-28 |
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