JP2582012Y2 - Wafer heater - Google Patents

Description

[Detailed description of the invention]

[0001]

The present invention relates to a semiconductor manufacturing apparatus.
For example, the present invention relates to, for example, a single-wafer diffusion / CVD apparatus, and more particularly, to a heater for heating the wafer.

[0002]

2. Description of the Related Art FIG. 3 is an explanatory view showing a part of a configuration of one example of a conventional heater, and FIG. 4 is a view showing a temperature distribution in a wafer surface with respect to a heater position in the conventional example. Conventional single-wafer diffusion C
The VD apparatus will be described with reference to FIG. 1A. Reference numeral 1 denotes a reaction chamber (water-cooled chamber), reference numeral 5 denotes a heater cover, and reference numerals 2 and 3 denote a wafer table and a heater provided on and inside the heater cover 5, respectively. is there.

[0003] Reference numeral 4 denotes a wafer mounted on the wafer table 2, 6 denotes a gas jet nozzle for jetting a reaction gas into the reaction chamber 1, 7 denotes a wafer transfer port for carrying the wafer 4 into and out of the reaction chamber 1, and 8 denotes a wafer transfer port. The gate valve, 9 is an exhaust port, and 10 is a gate valve.

[0004] Conventional heaters employ such a single-wafer diffusion / C
In the VD device, as shown in FIG.
This is divided into a plurality of zones, and the electrode terminals 3B for applying electric power to each zone are fixed by fixing parts 11 such as screws and nuts.

[0005]

In the above-mentioned conventional example, when the in-plane temperature of the wafer 4 is controlled by changing the electric power applied to each zone of the heater 3 through the electrode terminals 3B, the electrode terminals are not controlled. Since the heater wire 3A is fixed to the heater wire 3B by the fixing component 11, the fixing component 11 blocks the radiation due to the emission and heat generation of the heater wire portion immediately below the heater wire 3A. 4A, the temperature of the portion of the wafer 4 immediately above the fixed component 11 drops as shown in FIG.
There is a problem that the in-plane temperature uniformity is deteriorated.

[0006]

In order to solve the above-mentioned problems, the present invention provides a wafer mounting table in a reaction chamber, and a heater below a wafer horizontally supported by the wafer mounting table. In a wafer heating heater configured to heat the wafer, the heater may be a heater wire.
And the heater wire is supplied to each zone divided into a plurality of zones.
And an electrode terminal for applying a force.
Provided near the wafer in the vertical lower region of the c-plane
And the electrode terminal is in front of the heater wire.
Introduced from the opposite direction of the wafer
Irradiates the wafer surface direction from the heater wire.
Adhere so that radiant heat is not shielded by the electrode terminals.
Connected .

[0007]

[Function] By bonding the heater wire 3A and the electrode terminal 3B without using a fixed component in this manner, the emission of light from the heater wire portion on the electrode terminal 3B and the radiation due to heat generation are not blocked. The temperature drop in the portion of the wafer 4 on 3B is extremely small, and the in-plane temperature uniformity of the wafer 4 is improved.

[0008]

FIG. 1A is an explanatory view showing the structure of an example of a single-wafer diffusion / CVD apparatus implementing a heater according to the present invention, and FIG.
(B) is an explanatory view showing a part of the configuration of one embodiment of the heater of the present invention, and FIG. 2 is a diagram showing a temperature distribution in a wafer surface with respect to a heater position of the present invention. In this embodiment, the above-described single-wafer diffusion / CVD apparatus shown in FIG.
As shown in (B), an electrode terminal 3B for applying electric power to each of the plurality of divided zones is fitted into the heater wire 3A, and is bonded with an adhesive of the same material as the heater wire.

Since the heater wire 3A and the electrode terminal 3B are bonded without using a fixed part in this manner, the emission and heat radiation of the heater wire portion on the electrode terminal 3B will not be blocked, so that the electrode terminal 3B Wafer 4 on top
The temperature drop at the portion is extremely small as shown in FIG. 2A, and the in-plane temperature uniformity of the wafer 4 is improved.

[0010]

As described above, according to the present invention, the wafer 4 can be heated uniformly by bonding the heater wire 3A and the electrode terminal 3B without using a fixed component, so that the temperature within the wafer surface can be reduced. The film can be made uniform, and the film can be uniformly formed and processed on the wafer surface in the diffusion / CVD process.

[Brief description of the drawings]

FIG. 1 (A) is a single-wafer diffusion / implementation heater implementing the present invention.
FIG. 2B is an explanatory view showing a configuration of an example of a CVD apparatus, and FIG. 2B is an explanatory view showing a part of the configuration of an embodiment of the heater of the present invention.

FIG. 2 is a diagram illustrating a temperature distribution in a wafer surface with respect to a heater position according to the present invention.

FIG. 3 is an explanatory view showing a part of a configuration of an example of a conventional heater.

FIG. 4 is a diagram showing a temperature distribution in a wafer surface with respect to a heater position in a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Reaction chamber 2 Wafer mounting table 3A Heater wire 3B Electrode terminal 3 Heater 4 Wafer 5 Heater cover 6 Gas ejection nozzle 7 Wafer transfer port 9 Exhaust port

Claims (2)

(57) [Scope of request for utility model registration] A wafer is provided in a reaction chamber, and a heater is provided at a lower position of the wafer horizontally supported by the wafer mounting table to heat the wafer. In the heating heater, the heater includes a heater wire and the heater wire divided into a plurality of zones.
With the electrode terminals that apply power to each divided zone
Being configured in a region vertically below the wafer surface.
The electrode terminal is provided near the wafer, and the electrode terminal is
What is the direction in which the wafer is positioned with respect to the heater line?
Introduced from the opposite direction, the heater wire
Radiation heat applied in the direction of c is shielded by the electrode terminals
It is characterized by being connected by bonding so that it is not
Wafer heater that. 2. The heater for heating a wafer according to claim 1, wherein the heater wire and the electrode terminal are bonded with an adhesive of the same material.