JPH03211822A - Semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To make the temperature distribution of a wafer uniform at the time of heat-treating the wafer, prevent the generation of crystal deffect, enable continuous growth, and improve throughput, by arranging a wafer and a resistance heater so as to face each other, and installing a means to change the distance between the resistance heater and the wafer. CONSTITUTION:A wafer 1 and a resistance heater 3 are arranged in a chamber 7, so as to face each other, and a means (vertically driving mechanism installed on a retaining stand 2) to change the distance between the resistance heater 3 and the wafer 1 is installed. Hence the wafer 1 can be closely brought into contact with the resistance heater 3 whose temperature distribution is almost uniform. By bringing the wafer 1 closely into contact with the resistance heater 3 in this manner, the temperature distribution of the wafer 1 can be almost uniform as compared with the case using a lamp heater. Thereby the generation of crystal defect can be prevented, and the maintenance for eliminating a film attaching to a quartz window in the case of lamp heating can be eliminated, so that continuous growth is enabled and throughput can be improved.

Description

[Detailed Description of the Invention] [Summary] Regarding semiconductor manufacturing equipment, the present invention is capable of making the temperature distribution of the wafer almost uniform during heat treatment of the wafer, thereby making it difficult for crystal defects to occur, and of removing a film attached to a quartz window. The purpose of the present invention is to provide a semiconductor manufacturing equipment that can eliminate such maintenance, enable continuous growth, and improve throughput. A means is provided for changing the distance between the resistance heater and the cough tube.

[Industrial application field]

The present invention relates to semiconductor manufacturing equipment, and can be applied to high-temperature heat treatment equipment that performs heat treatments such as CVD and annealing in LSI manufacturing processes, and can make the temperature distribution of the wafer almost uniform when heat treating the wafer. Regarding semiconductor manufacturing equipment that can be used.

In recent years, semiconductor manufacturing equipment that performs heat treatments such as CVD and annealing has been required to have larger diameters and more intensive processes. Therefore, there is a need for a semiconductor manufacturing apparatus that can produce single wafers and has a high throughput.

Conventionally, chemical vapor deposition equipment that uses resistance heating has been the mainstream for selective growth of semiconductors and metals, but during selective growth, by-products etc. IR (infrared) irradiation heating is currently widely used, but in the future, considering the need to lower the temperature of the process, even in the low temperature range, the temperature It seems that a method using resistance heating that can stably obtain the distribution will become necessary.

Note that IR irradiation heating is widely used because heat is stored in quartz, etc., but it does not directly heat the susceptor (because it is easy to selectively and efficiently heat just the wafer). It is.

[Conventional technology]

FIG. 4 is a diagram schematically showing a conventional semiconductor manufacturing apparatus.

The illustrated semiconductor manufacturing apparatus is applied to a single-wafer type high-temperature heat treatment apparatus that performs heat treatments such as CVD and annealing.

In this figure, 31 is a wafer made of Si, for example;
32 is a support base for supporting the wafer 31; 33 is a chamber made of, for example, quartz and capable of vacuum; 34 is an IR lamp for heating the wafer 31; and 35 is a reflector for reflecting the heat from the IR clamp 4. It is a board.

As shown in FIG. 4, an rR clamp 4 was used as a heat source, and the IR clamp 4 was installed above the chamber 33 and below the chamber 33 (either one may be used) to heat the wafer 31. Then, the distance between the wafer 31 and the chamber 33 (the upper surface of the chamber 33, the lower surface of the chamber 33) is approximately 5 cm, and the distance between the chamber 33 and the IR lamp 34 is approximately 1 cm.
The distance between the wafer 31 and the IR lamp 34 was approximately 6 m.
They were about cm apart.

[Problems to be Solved by the Invention] However, in the conventional semiconductor manufacturing apparatus described above, the rR clamp 4 cannot be installed in the chamber 33, but is installed above and below the chamber 33, and the wafer 31 and the IR lamp 34 had to be separated by about 6 cm. For this reason, when the wafer 31 is heat-treated, the temperature distribution of the wafer 31 tends to become non-uniform, and specifically, the temperature distribution of the wafer 31 tends to be uneven, especially in the peripheral area (slip line).
Heat dissipates more than the inside (due to the larger surface area), and the temperature in the peripheral area becomes lower, making it easier for crystal defects to form in the peripheral area. In the worst case, the element part c would also be damaged.

Furthermore, when applying the above apparatus to CVD, the wafer 31
When heat-treated, the quartz window for the TR lamp 34 becomes high temperature, and a film is formed even on the quartz window, which inevitably deteriorates the lamp efficiency. Therefore, cleaning to remove the film adhering to the quartz window must be periodically performed, which is extremely troublesome.

Therefore, continuous growth was not possible, resulting in a problem that throughput was not increased.

Therefore, the present invention makes it possible to make the temperature distribution of the wafer almost uniform when heat-treating the wafer, making it difficult for crystal defects to occur, and eliminating the need for maintenance such as removing the film attached to the quartz window. enable continuous growth,
An object of the present invention is to provide a semiconductor manufacturing apparatus that can improve throughput.

[Means to solve the problem]

In order to achieve the above object, the semiconductor manufacturing apparatus according to the present invention is characterized in that a wafer and a resistance heater are disposed facing each other in a chamber, and a means is provided for changing the distance between the resistance heater and the acid wafer. It is something to do.

[Effect]

As shown in FIG. 1, in the present invention, a wafer 1 and a resistance heater 3 are disposed facing each other in a chamber 7, and means for changing the distance between the resistance heater 3 and the wafer 1 (in this case, a support plate 2 is used) A vertical drive mechanism) is provided.

Therefore, the wafer 1 can be brought into close contact with the resistance heater 3 having a substantially uniform temperature distribution.
When the wafer 1 is heat-treated, the temperature distribution of the wafer 1 can be made substantially uniform. Details will be explained in Examples.

〔Example〕

Hereinafter, the present invention will be explained based on the drawings.

FIG. 1 is a schematic diagram showing the configuration of an embodiment of a semiconductor manufacturing apparatus according to the present invention. The illustrated example semiconductor manufacturing equipment is C
This is a case where it is applied to a VD device.

In this figure, 1 is a wafer made of, for example, Si, and 2 is a support stand for supporting the wafer 1, which can be moved up and down by a vertical drive mechanism (corresponding to the means according to the present invention). Reference numeral 3 denotes a resistance heater that heats the wafer 1, and here it can also function as a susceptor. 4 is a shower; 5 is a temperature measuring means for measuring the temperature of the wafer 1 and the resistance heater 3 using a thermocouple 6; 7 is a vacuum chamber made of quartz, for example; 8 is a wafer 1;
This is a wafer moving device that takes out the wafer from the wafer cassette, places it on the support stand 2, and takes it out.

Next, the principle of operation will be explained.

The resistance heater 3 here uses electric resistance to heat through electricity, and is always heated by passing an electric current through it. Then, the wafer 1 is placed on four (three is sufficient) support stands 2 on which thermocouples 6 are provided at a location away from the resistance heater 3 by the wafer moving device 8. Then, the wafer 1 is slowly lowered by a vertical mechanism provided on the support table 2, and the temperature of the wafer 1 is increased. Specifically, the support stand 2 can be moved up and down by a vertical mechanism through a hole provided in the resistance heater 3, and the resistance heater 3 is fixed to a chang-huff.

Finally, the wafer 1 is brought into close contact with a resistance heating heater 3 having a substantially uniform temperature distribution and heated.

In this way, by bringing the wafer 1 into close contact with the resistance heater 3, which has a substantially uniform temperature distribution, the temperature distribution of the wafer 1 can be made more uniform than when a conventional lamp heater is used. Therefore, it is possible to make it difficult for crystal defects to occur, and it is also possible to eliminate maintenance such as removing the film attached to the quartz window when using lamp heating, enabling continuous growth and improving throughput. can.

In addition, in the above embodiment, the wafer 1 and the resistance heater 3
Although the case has been described in which the temperature of the wafer 1 is controlled by bringing the wafers into close contact with each other, the present invention is not limited to this.
The wafer 1 and the resistance heater 3 are not placed in close contact with each other, but the wafer 1 and the resistance heater 3 are arranged with an appropriate distance between them, and the temperature of the resistance heater 3 is controlled by changing the distance between the wafer 1 and the resistance heater 3 and the supplied power. The temperature of the wafer 1 may be controlled by changing the temperature.

Further, in the above embodiment, the case where the wafer l side is moved to bring it close to or in close contact with the resistance heater 3 side (fixed), but the present invention is not limited to this. The heater 3 side may be moved closer to or in close contact with the wafer 1 side (fixed).

Furthermore, although the above embodiment describes the case where the resistance heater 3 is provided below the wafer 1, the present invention is not limited to this, and as shown in FIG. 3 may be provided above Ueno\1. In this case, the processing surface of the wafer 1 is the surface on the shower 4 side (the X section shown in FIG. 2) which is the reflection side of the resistance heater 3. Furthermore, as shown in FIGS. 3(a) and 3(b), the resistance heater 3 may be shaped like a bowl so as to surround the wafer 1. In this case, the heat dissipation around the wafer 1 can be reduced. This is preferable because it allows for

(Effects of the Invention) According to the present invention, when the wafer 1 is heat-treated, the temperature distribution of the wafer can be made almost uniform to make it difficult for crystal defects to occur, and the film attached to the quartz window can be removed. It can eliminate maintenance, enable continuous growth, and improve throughput.

[Brief explanation of drawings]

FIG. 1 is a schematic diagram showing the configuration of one embodiment of a semiconductor manufacturing device according to the present invention, and FIGS. 2 and 3 are schematic diagrams showing the configuration of other embodiments. FIG. 4 is a schematic diagram of a device showing the configuration of a conventional example. ...Wafer, ...Support stand, ...Resistance heater, ...Shower, Temperature measurement means, ...Thermoelectric vs. . . . chamber, . . . wafer moving device.

Claims (1)

[Claims] A wafer (1) and a resistance heater (
3) are arranged to face each other, and a means for changing the distance between the resistance heater (3) and the wafer (1) is provided.