JP2002203797A - Semiconductor manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make the temperature of a wafer uniform. SOLUTION: An auxiliary heater 3 for compensating for the decrease in the temperature of an end section 1A of a heater 1 is provided at the end section of at least the central side of the resistance heating type heater 1 where power is applied, or an auxiliary heater that is separate from the heater for compensating for the decrease in the temperature at the end section of the heater is connected to the end section of the resistance heating type heater where power is applied.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus such as a CVD (chemical vapor deposition) apparatus, and more particularly to a heater for heating a wafer used in a single-wafer CVD apparatus.

[0002]

2. Description of the Related Art One of semiconductor manufacturing processes is a process of heating a silicon wafer in a low-pressure reaction gas atmosphere to deposit a reaction product on the wafer surface (CVD). As a CVD apparatus for depositing this reaction product, a wafer
There is a single-wafer CVD apparatus that processes each sheet.

FIG. 4 is a structural explanatory view showing an example of a single-wafer CVD apparatus to which the present invention is applied, FIG. 5 is a plan view showing an example of the heater in FIG. 4, and FIG. 6 is a front view thereof. In FIG. 4, a wafer table 5 is provided in the reaction chamber 4, and a susceptor 6 is provided on the wafer table 5, and a wafer 7 is mounted on the susceptor 6.

[0004] A resistance heating type heater 1 is provided below the wafer mounting table 5. The heater 1 heats the susceptor 6 and further heats the wafer 7. A nozzle 8 for ejecting a reaction gas is fixed to the upper wall of the reaction chamber 4 above the wafer 7.

[0005] Such a single-wafer CVD apparatus has a reaction chamber 4
The inside is decompressed, a reaction gas is ejected from a nozzle 8 and the wafer 7 is heated by the heater 1 via the susceptor 6.
This is a device that generates a CVD film on the wafer surface.

A conventional heater 1 for heating a wafer used in the above-mentioned single-wafer CVD apparatus is a resistance heating type spiral heater as shown in FIGS. 5 and 6, and electrodes for applying power to both ends thereof. Terminal 2 is connected. The temperature of the wafer 7 is controlled by changing the power applied between the electrode terminals 2.

[0007] In the CVD process, a CVD film formed by deposition of a reaction product varies depending on the temperature of the wafer surface. Therefore, in order to obtain a uniform film thickness,
The wafer temperature must be controlled by the temperature control by the heater 1.

[0008]

However, in the above-mentioned conventional heater, Mo, which introduces electric power to be applied to the heater 1, are used.
Since the temperature of the electrode terminal 2 such as Sus is significantly lower than that of the other heater portions due to heat radiation from the electrode portion, a low temperature portion is generated in the wafer temperature, and a CVD film having a uniform thickness is formed on the wafer surface. There is a problem that it cannot be obtained.

The diameter of the susceptor 6 is larger than the diameter of the wafer 7.
Is large, and the diameter of the heater 1 is determined correspondingly. Therefore, of the electrode terminal 2 portion at the center of the heater 1 and the electrode terminal 2 at the outer portion, mainly the electrode terminal 2 at the center portion The temperature of the part becomes a problem.

[0010]

According to the present invention, in order to solve the above-mentioned problems, a wafer is placed on a susceptor provided in a reaction chamber, and a resistance heating type heater is provided below the susceptor. In a semiconductor manufacturing apparatus that heat-processes a wafer through a heater, an auxiliary heater for compensating for a temperature drop at an end portion of the heater is provided at least at an end on the center side of the resistance heating heater to which power is applied. Also,
In a semiconductor manufacturing apparatus in which a wafer is placed on a susceptor provided in a reaction chamber, a resistance heating type heater is provided below the susceptor, and the heater heats the wafer via the susceptor, the resistance heating is applied. An auxiliary heater separate from the heater for compensating for a temperature drop at the end of the heater is connected to the end of the mold heater.

[0011]

With this configuration, the temperature drop at the end of the heater can be compensated for by the auxiliary heater, and a CVD film having a uniform film thickness can be obtained on the wafer surface.

[0012]

FIG. 1A is a plan view showing a first embodiment of a heater according to the semiconductor manufacturing apparatus of the present invention, and FIG. 1B is a front view thereof. In the first embodiment, in the single-wafer CVD apparatus shown in FIG. 4, a central end of a resistance heating type spiral heater 1 to which electric power is applied is bent downward, and this portion is
Is configured as an auxiliary heater 3 for compensating for the temperature drop of the end portion 1A.

When electric power is applied between the electrode terminals 2 of the spiral heater 1 in the first embodiment, the auxiliary heater 3 can compensate for the temperature drop of the electrode terminal 2 on the center side of the heater 1.

FIG. 2 is a front view showing a second embodiment. In the second embodiment, two auxiliary heaters 3 are connected to an end of the resistance heating type spiral heater 1 on the center side. The second embodiment has the same operation and effect as the first embodiment of FIG.

FIG. 3 is a front view showing a third embodiment. In the third embodiment, an auxiliary heater 3 is connected to a center electrode terminal 2 of a resistance heating type spiral heater 1, and an electrode terminal 2A is connected to the auxiliary heater 3. The third embodiment has the same operation and effect as those of the first and second embodiments.

The surface temperature of the wafer 7 is heated to a maximum of about 1500 ° C., and the wafer temperature at the time of film formation is about 1000 ° C. The electrode terminal 2 for applying power to the heater 1 is generally connected to the end of the heater 1 with screws or the like so as not to be loosened, so that heat generation at the terminal portion is reduced.

[0017]

As described above, according to the present invention, a wafer is placed on a susceptor provided in a reaction chamber, a resistance heating type heater is provided below the susceptor, and the heater controls the wafer via the susceptor. In a semiconductor manufacturing apparatus for performing heat treatment, an auxiliary heater for compensating for a temperature drop at an end portion of the resistance heating type heater to which power is applied is provided at least at an end on the center side, or power is applied to the resistance heating type heater. An auxiliary heater separate from the heater that compensates for the temperature drop at the end of the heater is connected to the end of the resistance heating type heater, so that the temperature drop at the end of the heater is compensated by the auxiliary heater. Since the temperature of the wafer can be made uniform, a CVD film having a uniform thickness can be obtained on the wafer surface.

[Brief description of the drawings]

FIG. 1A is a plan view showing a first embodiment of a heater according to a semiconductor manufacturing apparatus of the present invention, and FIG. 1B is a front view thereof.

FIG. 2 is a front view showing a second embodiment.

FIG. 3 is a front view showing a third embodiment.

FIG. 4 is a configuration explanatory view showing one example of a single wafer type CVD apparatus to which the present invention is applied.

FIG. 5 is a plan view showing an example of the heater in FIG.

FIG. 6 is a front view thereof.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Resistance heating type (spiral type) heater 1A end part 2 Electrode terminal 2A Electrode terminal 3 Auxiliary heater 4 Reaction chamber 5 Wafer mounting table 6 Susceptor 7 Wafer 8 Nozzle

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (Reference) H05B 3/68 H05B 3/68 (72) Inventor Fumihide Ikeda 3-14-20 Higashinakano, Nakano-ku, Tokyo Hitachi Kokusai Inc. F term in electricity (reference)

Claims (2)

[Claims] 1. A wafer is placed on a susceptor provided in a reaction chamber, and a resistance heater is provided below the susceptor.
In a semiconductor manufacturing apparatus for heating a wafer through a susceptor by the heater, an auxiliary heater for compensating for a temperature drop at an end portion of the heater is provided at least at an end of a resistance heating type heater to which power is applied. Semiconductor manufacturing equipment. 2. A wafer is placed on a susceptor provided in a reaction chamber, and a resistance heater is provided below the susceptor.
In a semiconductor manufacturing apparatus for heating a wafer through a susceptor by the heater, an auxiliary part separate from the heater is provided at an end of a resistance heating type heater to which electric power is applied to compensate for a temperature drop at the end of the heater. A semiconductor manufacturing device connected to a heater.