JPH09326387A - Film formation method and its device - Google Patents
Film formation method and its deviceInfo
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- JPH09326387A JPH09326387A JP14417596A JP14417596A JPH09326387A JP H09326387 A JPH09326387 A JP H09326387A JP 14417596 A JP14417596 A JP 14417596A JP 14417596 A JP14417596 A JP 14417596A JP H09326387 A JPH09326387 A JP H09326387A
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- power source
- power
- reaction chamber
- thin film
- processed
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、主として半導体集
積回路の製造において、半導体基板の表面上に絶縁薄膜
を堆積形成する絶縁薄膜形成方法等に好適に適用される
薄膜形成方法及びその装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming method and apparatus suitable for use in an insulating thin film forming method of depositing an insulating thin film on the surface of a semiconductor substrate, mainly in the manufacture of semiconductor integrated circuits. Is.
【０００２】[0002]
【従来の技術】半導体集積回路の製造において、アルミ
ニウム配線を終えた半導体基板表面上に、保護膜として
シリコン窒化膜をプラズマ気相成長法（Ｐ−ＣＶＤ法と
略称する）によって形成することが一般的に行なわれて
いる。この場合、反応ガスとしてシラン、アンモニア及
び窒素が一般的に用いられる。2. Description of the Related Art In the manufacture of semiconductor integrated circuits, it is common to form a silicon nitride film as a protective film on the surface of a semiconductor substrate having aluminum wiring completed by plasma vapor deposition (abbreviated as P-CVD method). Is being carried out. In this case, silane, ammonia and nitrogen are generally used as the reaction gas.
【０００３】ところで、近年は半導体集積回路の高集積
化に伴って、アルミニウム配線の微細化が進み、膜応力
によるアルミニウム配線の断線（ストレスマイグレーシ
ョン）が問題となってきた。そこで、周波数の異なる２
つの電源をＰ−ＣＶＤ装置に設置してプラズマを発生さ
せ、低応力の保護膜を形成することにより、信頼性の向
上が図られている。By the way, in recent years, with the high integration of semiconductor integrated circuits, the miniaturization of aluminum wiring has progressed, and disconnection (stress migration) of aluminum wiring due to film stress has become a problem. Therefore, 2
Reliability is improved by installing two power sources in a P-CVD apparatus to generate plasma and form a low-stress protective film.
【０００４】図４は、従来の低応力の保護膜を形成する
薄膜形成装置を示す。図４において、１１は反応室、１
２は反応ガス吹き出し口を有し、高周波電力が印加され
る上部電極、１３は被処理体、１４は反応室１１内に配
置された導電性の支持台、１５は支持台１４を加熱する
ためのヒータ、１６は反応室へのガス導入口、１７はガ
スを導入した時に反応室内を真空に保持するための排気
口、１８は支持台１４に電力を印加するための第１の電
源、１９は上部電極１２に電力を印加するための第２の
電源である。一般的に、第１の電源１８には３００〜５
００ｋＨｚの低周波電源が、第２の電源１９には１３．
５６ＭＨｚの高周波電源がそれぞれ使用されている。FIG. 4 shows a conventional thin film forming apparatus for forming a low stress protective film. In FIG. 4, 11 is a reaction chamber, 1
2 is an upper electrode to which a high-frequency power is applied, which has a reaction gas outlet, 13 is an object to be treated, 14 is a conductive support placed in the reaction chamber 11, and 15 is for heating the support 14. , 16 is a gas introduction port to the reaction chamber, 17 is an exhaust port for keeping the reaction chamber vacuum when gas is introduced, 18 is a first power source for applying electric power to the support base 14, 19 Is a second power source for applying power to the upper electrode 12. Generally, the first power supply 18 has 300-5
A low frequency power source of 00 kHz is supplied to the second power source 19.
A 56 MHz high frequency power supply is used.
【０００５】以上の構成において、支持台１４に載置さ
れた被処理体１３はヒータ１５により約３５０℃に加熱
される。ガス導入口１６より反応ガスを導入し、上部電
極１２に第２の電源１９より高周波電力、支持台１４に
第１の電源１８より低周波電力を同時に印加することに
より、上部電極１２と支持台１４間にプラズマが発生し
て反応ガスが分解して被処理体１３上に堆積し、低応力
のシリコン窒化膜が被処理体１３上に形成される。In the above structure, the object to be processed 13 placed on the support 14 is heated to about 350 ° C. by the heater 15. By introducing a reactive gas from the gas inlet 16 and simultaneously applying high-frequency power from the second power supply 19 to the upper electrode 12 and low-frequency power from the first power supply 18 to the support 14, the upper electrode 12 and the support Plasma is generated between 14 and the reaction gas is decomposed and deposited on the object to be processed 13, and a low-stress silicon nitride film is formed on the object to be processed 13.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、従来の
薄膜形成装置では、半導体基板から成る被処理体１３上
にＰ−ＣＶＤ法により薄膜を形成する際に、図５に示す
ように、第１の電源１８と第２の電源１９を同時に印加
しているため、第１の電源＋第２の電源の印加電力が急
速に立ち上がる。そのために両電源による放電が互いに
干渉し合い、プラズマ放電が起こり難くなる。その結果
プラズマ中に微粒子が多量に生成し、その微粒子を取り
囲む形で被処理体上に薄膜が形成されてしまい、製品の
信頼性が損なわれてしまうという問題があった。However, in the conventional thin film forming apparatus, as shown in FIG. 5, when the thin film is formed on the object 13 made of the semiconductor substrate by the P-CVD method, the first thin film forming apparatus is used. Since the power source 18 and the second power source 19 are applied at the same time, the applied power of the first power source + the second power source rises rapidly. Therefore, the discharges from both power sources interfere with each other and plasma discharge is less likely to occur. As a result, a large amount of fine particles are generated in the plasma, and a thin film is formed on the object to be processed so as to surround the fine particles, which deteriorates the reliability of the product.
【０００７】本発明は上記従来の問題点に鑑み、半導体
基板上にＰ−ＣＶＤ法により薄膜を形成するに際してプ
ラズマ放電開始時に放電を安定して発生させ、良質の薄
膜を形成する薄膜形成方法及びその装置を提供すること
を目的としている。In view of the above-mentioned conventional problems, the present invention provides a thin film forming method for forming a good quality thin film by stably generating discharge at the start of plasma discharge when forming a thin film on a semiconductor substrate by P-CVD. The purpose is to provide the device.
【０００８】[0008]
【課題を解決するための手段】本発明の薄膜形成方法
は、互いに異なった周波数ｆ1 、ｆ2 を有する第１と第
２の電源により反応室内にプラズマを発生させ、反応室
内に導入した反応ガスをプラズマ放電エネルギーにより
活性化させ、反応ガスを化学的気相成長法により被処理
体へ堆積させる薄膜形成方法において、第１の電源と第
２の電源を適当な時間差を設けて印加することにより、
プラズマ放電を安定して発生させるようにしている。According to the thin film forming method of the present invention, a plasma is generated in a reaction chamber by a first power source and a second power source having different frequencies f 1 and f 2 , and the reaction is introduced into the reaction chamber. In a thin film forming method in which a gas is activated by plasma discharge energy and a reaction gas is deposited on an object to be processed by a chemical vapor deposition method, a first power source and a second power source are applied with an appropriate time difference. Due to
The plasma discharge is generated stably.
【０００９】詳しくは、第１の電源を印加した後その投
入電力が所望の投入電力の９５％に達するまでの間に第
２の電源を印加するのが好ましく、また第１の電源の立
ち上がり時間をτ1 、第２の電源の立ち上がり時間をτ
2 、その立ち上がり時間を電源を印加してから所望の電
力に達するまでの時間として、第１の電源と第２の電源
を、その印加時間差ｔが、０＜ｔ≦τ1 −τ2 （但し、
τ1 ＞τ2 ）の条件を満たすように印加するのがより好
ましく、さらにはほぼｔ＝τ1 −τ2 の時間差で印加す
るのが最適である。また、これらの場合に低い周波数ｆ
1 の電源から印加するのが好ましい。More specifically, it is preferable to apply the second power source after applying the first power source until the applied power reaches 95% of the desired input power, and the rise time of the first power source is also applied. Is τ 1 , and the rise time of the second power supply is τ
2. The rising time is defined as the time from applying the power supply to reaching the desired power, and the difference in application time between the first power supply and the second power supply is 0 <t ≦ τ 1 −τ 2 (however, ,
It is more preferable to apply so as to satisfy the condition of τ 1 > τ 2 ), and it is optimal to apply with a time difference of approximately t = τ 1 −τ 2 . Also, in these cases, the low frequency f
It is preferable to apply from a power source of 1 .
【００１０】また、本発明の薄膜形成装置は、真空保持
可能な反応容器と、反応容器内で被処理体を保持する手
段と、被処理体に対向する位置に配設された反応ガス吹
き出し電極と、反応ガス吹き出し電極に周波数の異なる
電力を印加する２つの電源と、周波数の異なる２つの電
源を時間差を設けて印加する手段とを備えることによ
り、上記薄膜形成方法を実施するようにしている。又
は、第１の電源を被処理体の保持手段に印加し、第２の
電源を反応ガス吹き出し電極に印加しても同様の作用が
得られる。Further, the thin film forming apparatus of the present invention is provided with a reaction container capable of holding a vacuum, a means for holding an object to be processed in the reaction container, and a reaction gas blowing electrode arranged at a position facing the object to be processed. And a means for applying two power sources having different frequencies to the reactive gas blowing electrode and a means for applying two power sources having different frequencies with a time difference, thereby implementing the above-described thin film forming method. . Alternatively, the same effect can be obtained by applying the first power source to the holding means of the object to be processed and applying the second power source to the reactive gas blowing electrode.
【００１１】[0011]
（第１の実施形態）以下、本発明の第１の実施形態の薄
膜形成装置について図１、図２を参照して説明する。(First Embodiment) A thin film forming apparatus according to a first embodiment of the present invention will be described below with reference to FIGS.
【００１２】図１において、１は反応室、２は反応ガス
吹き出し口を有し高周波電力が印加される上部電極、３
は被処理体、４は反応室１内に配置された導電性の支持
台、５は支持台４を加熱するためのヒータ、６は反応室
１へのガス導入口、７はガスを導入した時に反応室１内
を真空に保持するための排気口、８は支持台４に電力を
印加するための第１の電源、９は上部電極２に電力を印
加するための第２の電源である。第１の電源８に４５０
ｋＨｚの低周波電源、第２の電源に１３．５６ＭＨｚの
高周波電源が使用されている。１０は第１の電源８と第
２の電源９を時間差ｔで印加するための電源印加タイミ
ング制御装置である。In FIG. 1, 1 is a reaction chamber, 2 is an upper electrode having a reaction gas outlet, and high frequency power is applied, 3
Is an object to be treated, 4 is a conductive support placed in the reaction chamber 1, 5 is a heater for heating the support 4, 6 is a gas inlet to the reaction chamber 1, and 7 is a gas. Occasionally, an exhaust port for maintaining a vacuum inside the reaction chamber 1, 8 is a first power source for applying power to the support 4, and 9 is a second power source for applying power to the upper electrode 2. . 450 to the first power supply 8
A low frequency power source of kHz and a high frequency power source of 13.56 MHz are used as the second power source. Reference numeral 10 is a power supply application timing control device for applying the first power supply 8 and the second power supply 9 with a time difference t.
【００１３】ガス導入口６よりシラン１２０ＳＣＣＭ
（但し、ＳＣＣＭは０℃、大気圧換算ｃｃ／分）、アン
モニア１５０ＳＣＣＭ、窒素２０００ＳＣＣＭを導入
し、反応室１内を約２．０Ｔｏｒｒに圧力調整する。支
持台４上にシリコンウエハを載置してヒータ５により約
３５０℃に保持した後、第１の電源８を２５０Ｗ印加
し、電源印加タイミング制御装置１０により時間差で
０．０１秒後、第２の電源９を３００Ｗ印加すると、シ
リコンウエハ上にシリコン窒化膜が形成される。Silane 120 SCCM from gas inlet 6
(However, SCCM is 0 ° C., atmospheric pressure conversion cc / min), ammonia 150 SCCM, nitrogen 2000 SCCM are introduced, and the pressure in the reaction chamber 1 is adjusted to about 2.0 Torr. After placing the silicon wafer on the support 4 and holding it at about 350 ° C. by the heater 5, 250 W of the first power supply 8 is applied, and after a time lag of 0.01 seconds by the power supply application timing control device 10, When the power source 9 of 300 W is applied, a silicon nitride film is formed on the silicon wafer.
【００１４】上記電源印加タイミング制御装置１０で設
定される時間差ｔは、τ1 を第１の電源８の立ち上がり
時間、τ2 を第２の電源９の立ち上がり時間、その立ち
上がり時間は電源を印加してから所望の電力に達するま
での時間として、ｔ＝（τ1−τ2 ）（但し、τ1 ＞τ
2 ）とされている。なお、ｔは、０＜ｔ≦（τ1 −
τ2 ）であればよいが、（τ1 −τ2 ）にできる限り近
くして第１の電源８と第２の電源９がほぼ同時に所望の
電力に達するようにするのが最適である。The time difference t set by the power supply application timing control device 10 is as follows: τ 1 is the rise time of the first power supply 8, τ 2 is the rise time of the second power supply 9, and the power is applied for the rise time. T = (τ 1 −τ 2 ) (where τ 1 > τ
2 ) Note that t is 0 <t ≦ (τ 1 −
τ 2 ), but it is optimal that the first power source 8 and the second power source 9 reach the desired power almost at the same time as close as possible to (τ 1 −τ 2 ).
【００１５】図２は本実施形態における第１の電源８と
第２の電源９の印加電力と時間の関係を示したものであ
る。第１の電源＋第２の電源の印加電力を時間差をもっ
て放電開始することにより、放電開始時の印加電力の上
昇が緩やかとなるため、安定したプラズマ放電が得ら
れ、信頼性の優れた良質なシリコン窒化膜を形成するこ
とができる。FIG. 2 shows the relationship between the applied power of the first power source 8 and the second power source 9 and time in this embodiment. By starting the discharge of the applied power of the first power supply + the second power supply with a time lag, the increase of the applied power at the start of discharge is moderated, so that stable plasma discharge can be obtained and the reliability is high. A silicon nitride film can be formed.
【００１６】（第２の実施形態）図３は、本発明の第２
の実施形態における第１の電源８と第２の電源９の印加
電力と時間の関係を示したものである。反応ガス流量等
の条件は第１の実施形態と同様である。(Second Embodiment) FIG. 3 shows a second embodiment of the present invention.
9 shows the relationship between the applied power of the first power supply 8 and the second power supply 9 and time in the embodiment of FIG. The conditions such as the flow rate of the reaction gas are the same as those in the first embodiment.
【００１７】本実施形態では、電源印加タイミング制御
装置１０により第１の電源８を印加した後、その第１の
電源８の投入電力が２５０Ｗの９５％に達するまでの間
の適当な時間差を設けて第２の電源９を印加している。
このように第１の電源８と第２の電源９を時間差を設け
て印加することにより、第１電源８と第２の電源９を同
時に印加した時に比べ、放電開始時における第１の電源
＋第２の電源の印加電力の上昇が緩やかとなるため安定
したプラズマ放電が得られ、信頼性の優れた良質なシリ
コン窒化膜を形成することができる。In the present embodiment, an appropriate time difference is provided between the first power source 8 is applied by the power source application timing control device 10 and the input power of the first power source 8 reaches 95% of 250 W. The second power source 9 is applied.
By thus applying the first power source 8 and the second power source 9 with a time lag, the first power source + at the start of discharge can be compared with the case where the first power source 8 and the second power source 9 are simultaneously applied. Since the increase in the power applied by the second power source becomes gentle, stable plasma discharge can be obtained, and a high-quality silicon nitride film with excellent reliability can be formed.
【００１８】以上の説明ではシリコン窒化膜を形成する
例について説明したが、ＴＥＯＳ（テトラエトキシシラ
ン）膜、ＳｉＯＦ膜等、２電源を使用するＰ−ＣＶＤ装
置でも同様に実施可能である。In the above description, an example of forming a silicon nitride film has been described, but a P-CVD apparatus using two power supplies, such as a TEOS (tetraethoxysilane) film and a SiOF film, can be similarly used.
【００１９】なお、上記実施形態では上部電極に第２の
電源、支持台に第１の電源を各々印加したが、上部電極
に第１と第２の電源を印加する装置構成でも同様に実施
可能である。In the above embodiment, the second power source is applied to the upper electrode and the first power source is applied to the support, respectively. However, a device configuration in which the first and second power sources are applied to the upper electrode can be similarly applied. Is.
【００２０】[0020]
【発明の効果】本発明の薄膜形成方法によれば、以上の
説明から明らかなように、第１と第２の電源を適当な時
間差を設けて印加することにより、放電開始時での印加
電力の上昇を緩やかにできて、プラズマ放電を安定して
発生させることができ、Ｐ−ＣＶＤ法により信頼性の優
れた良質の薄膜を形成することができる。According to the thin film forming method of the present invention, as is apparent from the above description, by applying the first and second power supplies with an appropriate time difference, the applied power at the start of discharge can be improved. Can be moderately increased, plasma discharge can be stably generated, and a high-quality thin film having excellent reliability can be formed by the P-CVD method.
【００２１】また、本発明の薄膜形成装置によれば、反
応ガス吹き出し電極に対して、又は被処理物の保持手段
と反応ガス吹き出し電極のそれぞれに、互いに周波数の
異なる電力を印加する２つの電源を時間差を設けて印加
する手段とを備えるので、上記薄膜形成方法を実施して
良質の薄膜を形成することができる。Further, according to the thin film forming apparatus of the present invention, two power supplies for applying electric power having different frequencies to the reaction gas blowing electrode, or to the holding means of the object to be treated and the reaction gas blowing electrode, respectively. Is provided with a time difference, so that a thin film of good quality can be formed by implementing the above-mentioned thin film forming method.
【図１】本発明の第１の実施形態における薄膜形成装置
の概略構成図である。FIG. 1 is a schematic configuration diagram of a thin film forming apparatus according to a first embodiment of the present invention.
【図２】同実施形態における印加電力と時間の関係を示
す図である。FIG. 2 is a diagram showing a relationship between applied power and time in the same embodiment.
【図３】本発明の第２の実施形態における印加電力と時
間の関係を示す図である。FIG. 3 is a diagram showing a relationship between applied power and time in the second embodiment of the present invention.
【図４】従来例の薄膜形成装置の概略構成図である。FIG. 4 is a schematic configuration diagram of a conventional thin film forming apparatus.
【図５】従来例における印加電力と時間の関係を示す図
である。FIG. 5 is a diagram showing a relationship between applied power and time in a conventional example.
【符号の説明】 １ 反応室 ２ 上部電極 ３ 被処理体 ４ 支持台 ８ 第１の電源 ９ 第２の電源 １０ 電源印加タイミング制御装置[Explanation of reference numerals] 1 reaction chamber 2 upper electrode 3 object to be treated 4 support base 8 first power supply 9 second power supply 10 power supply application timing control device
Claims (6)
る第１と第２の電源により反応室内にプラズマを発生さ
せ、反応室内に導入した反応ガスをプラズマ放電エネル
ギーにより活性化させ、反応ガスを化学的気相成長法に
より被処理体へ堆積させる薄膜形成方法において、第１
の電源と第２の電源を適当な時間差を設けて印加するこ
とを特徴とする薄膜形成方法。1. A plasma is generated in a reaction chamber by a first and a second power source having frequencies f 1 and f 2 different from each other, and the reaction gas introduced into the reaction chamber is activated by plasma discharge energy. In a thin film forming method for depositing a film on an object to be processed by a chemical vapor deposition method.
And a second power source are applied with an appropriate time difference, and applied.
所望の投入電力の９５％に達するまでの間に第２の電源
を印加することを特徴とする請求項１記載の薄膜形成方
法。2. The method for forming a thin film according to claim 1, wherein the second power source is applied after the first power source is applied and until the input power reaches 95% of the desired input power. .
２の電源の立ち上がり時間をτ2 、立ち上がり時間を電
源を印加してから所望の電力に達するまでの時間とし
て、第１の電源と第２の電源を、その印加時間差ｔが、
０＜ｔ≦τ1 −τ2 （但し、τ1 ＞τ2 ）の条件を満た
すように印加することを特徴とする請求項１記載の薄膜
形成方法。3. A tau 1 the rise time of the first power source, 2 a rise time tau of the second power supply, as the time from application of power the rise time to reach the desired power, the first power supply And the second power source, the difference t in the application time is
The thin film forming method according to claim 1, wherein the voltage is applied so as to satisfy a condition of 0 <t ≦ τ 1 −τ 2 (where τ 1 > τ 2 ).
を特徴とする請求項１〜３の何れかに記載の薄膜形成方
法。4. The thin film forming method according to claim 1, wherein the voltage is applied from a power source having a low frequency f 1 .
処理体を保持する支持手段と、被処理体に対向する位置
に配置されかつ周波数の異なる２つの電源が印加される
とともに反応ガスを吹き出す上部電極と、周波数の異な
る２つの電源を時間差を設けて上部電極に印加する手段
とを備えたことを特徴とする薄膜形成装置。5. A reaction chamber capable of holding a vacuum, a supporting means for holding an object to be processed in the reaction chamber, two power sources arranged at positions facing the object to be processed and having different frequencies, and a reaction gas. And a means for applying two power supplies having different frequencies to the upper electrode with a time difference.
処理体を保持するとともに第１の電源が印加される支持
手段と、被処理体に対向する位置に配置されかつ第１の
電源と周波数の異なる第２の電源が印加されるとともに
反応ガスを吹き出す上部電極と、周波数の異なる２つの
電源を時間差を設けて印加する手段とを備えたことを特
徴とする薄膜形成装置。6. A reaction chamber capable of holding a vacuum, a support means for holding an object to be processed in the reaction chamber and applying a first power source, and a first power source arranged at a position facing the object to be processed. And an upper electrode that blows out a reaction gas while a second power source having a different frequency is applied, and a means for applying two power sources having different frequencies with a time lag applied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14417596A JP3414934B2 (en) | 1996-06-06 | 1996-06-06 | Thin film formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14417596A JP3414934B2 (en) | 1996-06-06 | 1996-06-06 | Thin film formation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09326387A true JPH09326387A (en) | 1997-12-16 |
| JP3414934B2 JP3414934B2 (en) | 2003-06-09 |
Family
ID=15355959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14417596A Expired - Fee Related JP3414934B2 (en) | 1996-06-06 | 1996-06-06 | Thin film formation method |
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| Country | Link |
|---|---|
| JP (1) | JP3414934B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001077035A (en) * | 1999-09-07 | 2001-03-23 | Nec Kyushu Ltd | Device and method for manufacturing semiconductor |
| KR20030067308A (en) * | 2002-02-08 | 2003-08-14 | 주식회사 유진테크 | method for silicon nitride film using CVD apparatus of single chamber type |
| WO2005059202A1 (en) * | 2003-12-16 | 2005-06-30 | Konica Minolta Holdings, Inc. | Method for forming thin film and base having thin film formed by such method |
| WO2005059203A1 (en) * | 2003-12-16 | 2005-06-30 | Konica Minolta Holdings, Inc. | Transparent high-gas-barrier base and method for producing same |
| JP2007138301A (en) * | 1998-10-07 | 2007-06-07 | Lg Philips Lcd Co Ltd | Thin film forming apparatus |
-
1996
- 1996-06-06 JP JP14417596A patent/JP3414934B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007138301A (en) * | 1998-10-07 | 2007-06-07 | Lg Philips Lcd Co Ltd | Thin film forming apparatus |
| JP2001077035A (en) * | 1999-09-07 | 2001-03-23 | Nec Kyushu Ltd | Device and method for manufacturing semiconductor |
| KR20030067308A (en) * | 2002-02-08 | 2003-08-14 | 주식회사 유진테크 | method for silicon nitride film using CVD apparatus of single chamber type |
| WO2005059202A1 (en) * | 2003-12-16 | 2005-06-30 | Konica Minolta Holdings, Inc. | Method for forming thin film and base having thin film formed by such method |
| WO2005059203A1 (en) * | 2003-12-16 | 2005-06-30 | Konica Minolta Holdings, Inc. | Transparent high-gas-barrier base and method for producing same |
| JPWO2005059203A1 (en) * | 2003-12-16 | 2007-07-12 | コニカミノルタホールディングス株式会社 | Transparent and highly gas-barrier substrate and method for producing the same |
| JP4821324B2 (en) * | 2003-12-16 | 2011-11-24 | コニカミノルタホールディングス株式会社 | Transparent and highly gas-barrier substrate and method for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3414934B2 (en) | 2003-06-09 |
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