JPS5710985A - Solid image pickup element - Google Patents
Solid image pickup elementInfo
- Publication number
- JPS5710985A JPS5710985A JP8508280A JP8508280A JPS5710985A JP S5710985 A JPS5710985 A JP S5710985A JP 8508280 A JP8508280 A JP 8508280A JP 8508280 A JP8508280 A JP 8508280A JP S5710985 A JPS5710985 A JP S5710985A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- films
- gate
- depth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8508280A JPS5710985A (en) | 1980-06-25 | 1980-06-25 | Solid image pickup element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8508280A JPS5710985A (en) | 1980-06-25 | 1980-06-25 | Solid image pickup element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5710985A true JPS5710985A (en) | 1982-01-20 |
JPS6229913B2 JPS6229913B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-06-29 |
Family
ID=13848680
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8508280A Granted JPS5710985A (en) | 1980-06-25 | 1980-06-25 | Solid image pickup element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5710985A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6179380A (ja) * | 1984-09-27 | 1986-04-22 | Matsushita Electronics Corp | 固体撮像素子 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5665577A (en) * | 1979-11-01 | 1981-06-03 | Nec Corp | Solidstate image sensor |
-
1980
- 1980-06-25 JP JP8508280A patent/JPS5710985A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5665577A (en) * | 1979-11-01 | 1981-06-03 | Nec Corp | Solidstate image sensor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6179380A (ja) * | 1984-09-27 | 1986-04-22 | Matsushita Electronics Corp | 固体撮像素子 |
Also Published As
Publication number | Publication date |
---|---|
JPS6229913B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-06-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS56120166A (en) | Semiconductor ic device and manufacture thereof | |
JPS5778167A (en) | Charge transfer area image sensor | |
JPS56169369A (en) | High withstand voltage mos field effect semiconductor device | |
JPS56103578A (en) | Solid state pickup element | |
JPS55151363A (en) | Mos semiconductor device and fabricating method of the same | |
JPS5710985A (en) | Solid image pickup element | |
JPS64764A (en) | Semiconductor device | |
JPS5556663A (en) | Insulating-gate type field-effect transistor | |
JPS5773975A (en) | Mis type field effect transistor and manufacture thereof | |
JPS5788772A (en) | Vertical mis semiconductor device | |
JPS5742167A (en) | Production of mos type semiconductor device | |
JPS5538019A (en) | Manufacturing of semiconductor device | |
JPS572579A (en) | Manufacture of junction type field effect transistor | |
JPS5756973A (en) | Manufacture of insulated gate type field effect transistor | |
JPS56147447A (en) | Manufacture of mosic | |
JPS57172771A (en) | Semiconductor memory device | |
JPS5752167A (en) | Insulated gate type field effect transistor and manufacture thereof | |
JPS57120371A (en) | Manufacture of complementary type mos semiconductor | |
JPS5626472A (en) | Semiconductor memory | |
JPS5492180A (en) | Manufacture of semiconductor device | |
JPS5646571A (en) | Manufacture of solid image pickup element | |
JPS5464480A (en) | Semiconductor device | |
JPS5732673A (en) | Semiconductor device and manufacture thereof | |
JPS57106078A (en) | Mos semiconductor device | |
JPS5583265A (en) | Semiconductor device and method of fabricating the same |