JPS57107033A - Formation of minute pattern - Google Patents

Formation of minute pattern

Info

Publication number
JPS57107033A
JPS57107033A JP18434580A JP18434580A JPS57107033A JP S57107033 A JPS57107033 A JP S57107033A JP 18434580 A JP18434580 A JP 18434580A JP 18434580 A JP18434580 A JP 18434580A JP S57107033 A JPS57107033 A JP S57107033A
Authority
JP
Japan
Prior art keywords
film
photoresist
photosensitive wavelength
pattern
longer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18434580A
Other languages
Japanese (ja)
Inventor
Toshio Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP18434580A priority Critical patent/JPS57107033A/en
Publication of JPS57107033A publication Critical patent/JPS57107033A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a mask suitable for forming an electrode wiring film, etc. having a minute pattern by a method wherein two layers and more of a photoresist having a longer photosensitive wavelength and a photoresist having a shorter photosensitive wavelength, which are formed in inverted ? shape in its cross-section profile, are laminated on a substrate and a pattern is formed by exposing to light in turn from the photoresist having a longer wavelength. CONSTITUTION:A positive photoresist film 2 having a longer photosensitive wavelength, which is formed in inverted ? shape in its cross-section profile, is attached onto a substrate 1 to be used for a semiconductor, ceramic or a crystal vibrator, etc. and subsequently a positive photoresist film 3 having a short photosensitive wavelength is laminated thereon. Subsequently, the film 2 and 3 are exposed by using a super high tension mercury lamp for the film 2 and a Xe-Hg lamp for the film 3 respectively and a pattern is formed by using for the film 2 organic alkali solution and for the film 3 second petroleum organic solvent of ketone compound respectively. According to such a constitution, the film 2 is formed small and the film 3 is formed large to obtain a mask suitable for forming an electrode wiring film.
JP18434580A 1980-12-25 1980-12-25 Formation of minute pattern Pending JPS57107033A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18434580A JPS57107033A (en) 1980-12-25 1980-12-25 Formation of minute pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18434580A JPS57107033A (en) 1980-12-25 1980-12-25 Formation of minute pattern

Publications (1)

Publication Number Publication Date
JPS57107033A true JPS57107033A (en) 1982-07-03

Family

ID=16151648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18434580A Pending JPS57107033A (en) 1980-12-25 1980-12-25 Formation of minute pattern

Country Status (1)

Country Link
JP (1) JPS57107033A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6091639A (en) * 1983-10-26 1985-05-23 Alps Electric Co Ltd Formation of photo resist pattern

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6091639A (en) * 1983-10-26 1985-05-23 Alps Electric Co Ltd Formation of photo resist pattern

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