JPS64540A - Pattern forming method - Google Patents

Pattern forming method

Info

Publication number
JPS64540A
JPS64540A JP62325859A JP32585987A JPS64540A JP S64540 A JPS64540 A JP S64540A JP 62325859 A JP62325859 A JP 62325859A JP 32585987 A JP32585987 A JP 32585987A JP S64540 A JPS64540 A JP S64540A
Authority
JP
Japan
Prior art keywords
resin
pattern forming
dissolving
resolution
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62325859A
Other languages
Japanese (ja)
Other versions
JPH01540A (en
Inventor
Masataka Endo
Masaru Sasako
Kazufumi Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of JPH01540A publication Critical patent/JPH01540A/en
Publication of JPS64540A publication Critical patent/JPS64540A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/30—Introducing nitrogen atoms or nitrogen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/28—Chemically modified polycondensates

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To prevent the deterioration of resolution and contrast of a resist pattern by forming a pattern forming material comprising a specified resin and a solvent capable of dissolving said resin on a substrate, and by selectively exposing said material with a far UV light, followed by developing the exposed material. CONSTITUTION:A resist film 2 is formed on the substrate 1, using the pattern forming material comprising the resin which contains a binding unit shown by formula I and is low in absorption at about 249nm wavelength after exposing the far UV light, and the solvent capable of dissolving said resin. Next, the resist film 2 is exposed by for example, excimer laser 4 and developed. Thus, the resist pattern 2a with the high contrast, resolution and accuracy is formed, and as a result, the minute working of a semiconductor element and the improvement of a production yield are permitted.
JP62325859A 1986-12-25 1987-12-23 Pattern forming method Pending JPS64540A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP61-311356 1986-12-25
JP31135686 1986-12-25
JP61-312039 1986-12-26
JP62-24084 1987-02-04
JP62-24086 1987-02-04

Publications (2)

Publication Number Publication Date
JPH01540A JPH01540A (en) 1989-01-05
JPS64540A true JPS64540A (en) 1989-01-05

Family

ID=18016171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62325859A Pending JPS64540A (en) 1986-12-25 1987-12-23 Pattern forming method

Country Status (1)

Country Link
JP (1) JPS64540A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01124849A (en) * 1986-08-08 1989-05-17 Matsushita Electric Ind Co Ltd Pattern forming method
WO1998017644A1 (en) * 1996-10-23 1998-04-30 Akzo Nobel N.V. Cross-linkers for cross-linkable optical polycarbonates

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01124849A (en) * 1986-08-08 1989-05-17 Matsushita Electric Ind Co Ltd Pattern forming method
WO1998017644A1 (en) * 1996-10-23 1998-04-30 Akzo Nobel N.V. Cross-linkers for cross-linkable optical polycarbonates

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