JPS57104258A - Metal oxide semiconductor - Google Patents

Metal oxide semiconductor

Info

Publication number
JPS57104258A
JPS57104258A JP55180381A JP18038180A JPS57104258A JP S57104258 A JPS57104258 A JP S57104258A JP 55180381 A JP55180381 A JP 55180381A JP 18038180 A JP18038180 A JP 18038180A JP S57104258 A JPS57104258 A JP S57104258A
Authority
JP
Japan
Prior art keywords
gate
shaped
impurity
concentration
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55180381A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6364909B2 (enrdf_load_stackoverflow
Inventor
Hideshi Ito
Kazutoshi Ashikawa
Tetsuo Iijima
Mitsuo Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55180381A priority Critical patent/JPS57104258A/ja
Publication of JPS57104258A publication Critical patent/JPS57104258A/ja
Publication of JPS6364909B2 publication Critical patent/JPS6364909B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
JP55180381A 1980-12-22 1980-12-22 Metal oxide semiconductor Granted JPS57104258A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55180381A JPS57104258A (en) 1980-12-22 1980-12-22 Metal oxide semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55180381A JPS57104258A (en) 1980-12-22 1980-12-22 Metal oxide semiconductor

Publications (2)

Publication Number Publication Date
JPS57104258A true JPS57104258A (en) 1982-06-29
JPS6364909B2 JPS6364909B2 (enrdf_load_stackoverflow) 1988-12-14

Family

ID=16082234

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55180381A Granted JPS57104258A (en) 1980-12-22 1980-12-22 Metal oxide semiconductor

Country Status (1)

Country Link
JP (1) JPS57104258A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01162372A (ja) * 1987-12-18 1989-06-26 Matsushita Electron Corp Ｍｉｓ型トランジスタ
JPH03227572A (ja) * 1989-07-04 1991-10-08 Fuji Electric Co Ltd Ｍｏｓ半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01162372A (ja) * 1987-12-18 1989-06-26 Matsushita Electron Corp Ｍｉｓ型トランジスタ
JPH03227572A (ja) * 1989-07-04 1991-10-08 Fuji Electric Co Ltd Ｍｏｓ半導体装置

Also Published As

Publication number Publication date
JPS6364909B2 (enrdf_load_stackoverflow) 1988-12-14

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