JPS57104226A - Plasma vapor phase growing apparatus - Google Patents
Plasma vapor phase growing apparatusInfo
- Publication number
- JPS57104226A JPS57104226A JP18158780A JP18158780A JPS57104226A JP S57104226 A JPS57104226 A JP S57104226A JP 18158780 A JP18158780 A JP 18158780A JP 18158780 A JP18158780 A JP 18158780A JP S57104226 A JPS57104226 A JP S57104226A
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- phase growing
- anode
- cathode
- plasma vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18158780A JPS57104226A (en) | 1980-12-22 | 1980-12-22 | Plasma vapor phase growing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18158780A JPS57104226A (en) | 1980-12-22 | 1980-12-22 | Plasma vapor phase growing apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57104226A true JPS57104226A (en) | 1982-06-29 |
Family
ID=16103411
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18158780A Pending JPS57104226A (en) | 1980-12-22 | 1980-12-22 | Plasma vapor phase growing apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57104226A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5972126A (ja) * | 1982-10-16 | 1984-04-24 | Agency Of Ind Science & Technol | パタ−ンを有する半導体薄膜の製造法 |
KR100506588B1 (ko) * | 2002-08-26 | 2005-08-09 | (주) 플라즈닉스 | 플라즈마를 이용하여 피처리물을 처리하는 장치 |
-
1980
- 1980-12-22 JP JP18158780A patent/JPS57104226A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5972126A (ja) * | 1982-10-16 | 1984-04-24 | Agency Of Ind Science & Technol | パタ−ンを有する半導体薄膜の製造法 |
JPH0441489B2 (ja) * | 1982-10-16 | 1992-07-08 | Kogyo Gijutsu Incho | |
KR100506588B1 (ko) * | 2002-08-26 | 2005-08-09 | (주) 플라즈닉스 | 플라즈마를 이용하여 피처리물을 처리하는 장치 |
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