JPS57103317A - Method for patterning - Google Patents
Method for patterningInfo
- Publication number
- JPS57103317A JPS57103317A JP17955180A JP17955180A JPS57103317A JP S57103317 A JPS57103317 A JP S57103317A JP 17955180 A JP17955180 A JP 17955180A JP 17955180 A JP17955180 A JP 17955180A JP S57103317 A JPS57103317 A JP S57103317A
- Authority
- JP
- Japan
- Prior art keywords
- light
- coating
- layer
- permeability
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To facilitate forming fine patterns by making exposure to light after depositing a layer of novolak or the like which has less permeability to gases but higher permeability to electron beams when negative type resist coatings are exposed to light under vacuum. CONSTITUTION:Negative type resist coating 3 is applied on an SiO2 layer 2 deposited on a semiconductor substrate 1 in order to make the coating 3 a desired pattern by exposing it to light. For this, the procedure described below is to be followed. A layer 4 of novolak, polyvinylidene chloride or polychlorotrifluoroethylene is formed to expose the coating 3 to light through this layer which has less permeability to gases but higher permeability to exposure light beams instead of exposing the coating 3 direct to light. By such a procedure, variation of layer thickness and deviation from design dimensions of the patterns can be minimized as the coating 3 is isolated from oxygen in the air so that operating rate of the exposure light system for fine patterning can be increased.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17955180A JPS57103317A (en) | 1980-12-18 | 1980-12-18 | Method for patterning |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17955180A JPS57103317A (en) | 1980-12-18 | 1980-12-18 | Method for patterning |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57103317A true JPS57103317A (en) | 1982-06-26 |
Family
ID=16067716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17955180A Pending JPS57103317A (en) | 1980-12-18 | 1980-12-18 | Method for patterning |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57103317A (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4841941A (en) * | 1971-10-04 | 1973-06-19 | ||
JPS507910A (en) * | 1973-05-29 | 1975-01-27 | ||
JPS53128277A (en) * | 1977-04-14 | 1978-11-09 | Fujitsu Ltd | Projection exposure method for negative resist |
JPS561941A (en) * | 1979-06-20 | 1981-01-10 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Image forming method |
-
1980
- 1980-12-18 JP JP17955180A patent/JPS57103317A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4841941A (en) * | 1971-10-04 | 1973-06-19 | ||
JPS507910A (en) * | 1973-05-29 | 1975-01-27 | ||
JPS53128277A (en) * | 1977-04-14 | 1978-11-09 | Fujitsu Ltd | Projection exposure method for negative resist |
JPS561941A (en) * | 1979-06-20 | 1981-01-10 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Image forming method |
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