JPS57100734A - Etching method for semiconductor substrate - Google Patents

Etching method for semiconductor substrate

Info

Publication number
JPS57100734A
JPS57100734A JP55176674A JP17667480A JPS57100734A JP S57100734 A JPS57100734 A JP S57100734A JP 55176674 A JP55176674 A JP 55176674A JP 17667480 A JP17667480 A JP 17667480A JP S57100734 A JPS57100734 A JP S57100734A
Authority
JP
Japan
Prior art keywords
etching
region
silicon dioxide
depth
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55176674A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6359532B2 (en:Method
Inventor
Shigeo Kodama
Takaaki Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55176674A priority Critical patent/JPS57100734A/ja
Publication of JPS57100734A publication Critical patent/JPS57100734A/ja
Publication of JPS6359532B2 publication Critical patent/JPS6359532B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/00—

Landscapes

  • Weting (AREA)
JP55176674A 1980-12-15 1980-12-15 Etching method for semiconductor substrate Granted JPS57100734A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55176674A JPS57100734A (en) 1980-12-15 1980-12-15 Etching method for semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55176674A JPS57100734A (en) 1980-12-15 1980-12-15 Etching method for semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS57100734A true JPS57100734A (en) 1982-06-23
JPS6359532B2 JPS6359532B2 (en:Method) 1988-11-21

Family

ID=16017733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55176674A Granted JPS57100734A (en) 1980-12-15 1980-12-15 Etching method for semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS57100734A (en:Method)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5683546A (en) * 1992-10-23 1997-11-04 Ricoh Seiki Company, Ltd. Method of etching silicon substrate at different etching rates for different planes of the silicon to form an air bridge
CN109445245A (zh) * 2018-10-15 2019-03-08 上海华虹宏力半导体制造有限公司 一种掩模板、晶圆、晶粒以及等离子刻蚀裂片的方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5683546A (en) * 1992-10-23 1997-11-04 Ricoh Seiki Company, Ltd. Method of etching silicon substrate at different etching rates for different planes of the silicon to form an air bridge
CN109445245A (zh) * 2018-10-15 2019-03-08 上海华虹宏力半导体制造有限公司 一种掩模板、晶圆、晶粒以及等离子刻蚀裂片的方法

Also Published As

Publication number Publication date
JPS6359532B2 (en:Method) 1988-11-21

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