JPS5693244A - Electron gun - Google Patents
Electron gunInfo
- Publication number
- JPS5693244A JPS5693244A JP16986479A JP16986479A JPS5693244A JP S5693244 A JPS5693244 A JP S5693244A JP 16986479 A JP16986479 A JP 16986479A JP 16986479 A JP16986479 A JP 16986479A JP S5693244 A JPS5693244 A JP S5693244A
- Authority
- JP
- Japan
- Prior art keywords
- plane
- chip
- single crystal
- inclined surfaces
- emission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/13—Solid thermionic cathodes
- H01J1/15—Cathodes heated directly by an electric current
- H01J1/16—Cathodes heated directly by an electric current characterised by the shape
Landscapes
- Solid Thermionic Cathode (AREA)
Abstract
PURPOSE:To prevent the emission pattern and cross-over form from splitting by selecting the bearing of a face with low work function of a single crystal material and exposuring a face with high work function on inclined surfaces at the top of the chip. CONSTITUTION:The axis bearing of a quadrangular prism-shaped LaB6 single crystal chip is selected in the direction of <100> or within 5 deg. from <100>, the top of the chip is cut to form a quadrangular pyramid so that four inclined surfaces coincide with <111> plane, and the top is cut to form a falt surface of 50mumX 50mum. Work functions of LaB6 are 2.3eV on <310> plane, 2.6eV on <100> plane, 2.7eV on <100> plane, and 3.6eV on <111> plane, thus, when thermions are emitted from the single crystal chip, electrons are emitted from the top flat surface prior to emission from inclined surfaces. Thus, the splitting of the emission patern and cross over form into several spots due to the chip temperature and bias voltage is prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16986479A JPS5693244A (en) | 1979-12-26 | 1979-12-26 | Electron gun |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16986479A JPS5693244A (en) | 1979-12-26 | 1979-12-26 | Electron gun |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5693244A true JPS5693244A (en) | 1981-07-28 |
JPH0128450B2 JPH0128450B2 (en) | 1989-06-02 |
Family
ID=15894356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16986479A Granted JPS5693244A (en) | 1979-12-26 | 1979-12-26 | Electron gun |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5693244A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57196445A (en) * | 1981-05-26 | 1982-12-02 | Ibm | Forming electron beam generator |
US4486684A (en) * | 1981-05-26 | 1984-12-04 | International Business Machines Corporation | Single crystal lanthanum hexaboride electron beam emitter having high brightness |
JP2005228741A (en) * | 2004-02-10 | 2005-08-25 | Nuflare Technology Inc | High-luminance thermionic cathode |
JP2019114340A (en) * | 2017-12-21 | 2019-07-11 | 株式会社ニューフレアテクノロジー | Cathode |
WO2022064557A1 (en) * | 2020-09-23 | 2022-03-31 | 株式会社日立ハイテク | Electron source, method for manufacturing same, and electron beam device in which same is used |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5211056A (en) * | 1975-07-16 | 1977-01-27 | Nippon Steel Corp | Surface form detecting method |
JPS5648029A (en) * | 1979-09-26 | 1981-05-01 | Toshiba Corp | Electron gun |
-
1979
- 1979-12-26 JP JP16986479A patent/JPS5693244A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5211056A (en) * | 1975-07-16 | 1977-01-27 | Nippon Steel Corp | Surface form detecting method |
JPS5648029A (en) * | 1979-09-26 | 1981-05-01 | Toshiba Corp | Electron gun |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57196445A (en) * | 1981-05-26 | 1982-12-02 | Ibm | Forming electron beam generator |
US4468586A (en) * | 1981-05-26 | 1984-08-28 | International Business Machines Corporation | Shaped electron emission from single crystal lanthanum hexaboride with intensity distribution |
US4486684A (en) * | 1981-05-26 | 1984-12-04 | International Business Machines Corporation | Single crystal lanthanum hexaboride electron beam emitter having high brightness |
JPH0158817B2 (en) * | 1981-05-26 | 1989-12-13 | Intaanashonaru Bijinesu Mashiinzu Corp | |
JP2005228741A (en) * | 2004-02-10 | 2005-08-25 | Nuflare Technology Inc | High-luminance thermionic cathode |
JP2019114340A (en) * | 2017-12-21 | 2019-07-11 | 株式会社ニューフレアテクノロジー | Cathode |
WO2022064557A1 (en) * | 2020-09-23 | 2022-03-31 | 株式会社日立ハイテク | Electron source, method for manufacturing same, and electron beam device in which same is used |
Also Published As
Publication number | Publication date |
---|---|
JPH0128450B2 (en) | 1989-06-02 |
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