JPS5691363A - Use of electron gun and electron beam device - Google Patents

Use of electron gun and electron beam device

Info

Publication number
JPS5691363A
JPS5691363A JP16816979A JP16816979A JPS5691363A JP S5691363 A JPS5691363 A JP S5691363A JP 16816979 A JP16816979 A JP 16816979A JP 16816979 A JP16816979 A JP 16816979A JP S5691363 A JPS5691363 A JP S5691363A
Authority
JP
Japan
Prior art keywords
cross
electron
electron beam
electron gun
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16816979A
Other languages
Japanese (ja)
Other versions
JPH0156501B2 (en
Inventor
Tadahiro Takigawa
Isao Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16816979A priority Critical patent/JPS5691363A/en
Priority to US06/216,948 priority patent/US4424448A/en
Priority to DE8080108139T priority patent/DE3071935D1/en
Priority to DE8585109319T priority patent/DE3072128D1/en
Priority to EP80108139A priority patent/EP0031579B1/en
Priority to EP85109319A priority patent/EP0168064B1/en
Publication of JPS5691363A publication Critical patent/JPS5691363A/en
Publication of JPH0156501B2 publication Critical patent/JPH0156501B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/248—Components associated with high voltage supply

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

PURPOSE:To perform the operation under optimal use condition, by using an electron gun having single crystal cathode chip and an electro-optical mirror tube and operating with a bias electron where the cross-over image is circular while the emission pattern image will show the anisotropy. CONSTITUTION:The forgel type electron gun in an electron beam device for reducing for reducing the cross-over and forming a fine probe has a single crystal lanthanum hexaboride LaB6 chip 101 and a heater 102 fixed to a holding tool 103, then located together with a wenelt 105 and an anode 106 in specific dimensional relation. The bias voltage between the chip 101 and the wenelt 105 is selected such that the cross-over image of the electron beam is circular while the emission pattern will show the anisotropy thus to form the cross-over image. Consequently when employing specific bias voltage and obtaining the optimal value for the LaB6 electron gun, accurate electron beam irradiation can be performed.
JP16816979A 1979-12-26 1979-12-26 Use of electron gun and electron beam device Granted JPS5691363A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP16816979A JPS5691363A (en) 1979-12-26 1979-12-26 Use of electron gun and electron beam device
US06/216,948 US4424448A (en) 1979-12-26 1980-12-16 Electron beam apparatus
DE8080108139T DE3071935D1 (en) 1979-12-26 1980-12-22 Method for determining the optimum operative conditions of the electron gun of an electron beam apparatus
DE8585109319T DE3072128D1 (en) 1979-12-26 1980-12-22 A method for determining the optimum operative conditions of an electron gun
EP80108139A EP0031579B1 (en) 1979-12-26 1980-12-22 Method for determining the optimum operative conditions of the electron gun of an electron beam apparatus
EP85109319A EP0168064B1 (en) 1979-12-26 1980-12-22 A method for determining the optimum operative conditions of an electron gun

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16816979A JPS5691363A (en) 1979-12-26 1979-12-26 Use of electron gun and electron beam device

Publications (2)

Publication Number Publication Date
JPS5691363A true JPS5691363A (en) 1981-07-24
JPH0156501B2 JPH0156501B2 (en) 1989-11-30

Family

ID=15863073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16816979A Granted JPS5691363A (en) 1979-12-26 1979-12-26 Use of electron gun and electron beam device

Country Status (1)

Country Link
JP (1) JPS5691363A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5818833A (en) * 1981-07-27 1983-02-03 Denki Kagaku Kogyo Kk Method of generating low temperature of high density electron beam and its system
JPS5823155A (en) * 1981-07-30 1983-02-10 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン Device for aligning and controlling charged particle beam
JPS5840729A (en) * 1981-09-02 1983-03-09 Denki Kagaku Kogyo Kk High brightness utilizing method from single crystal lanthanum boride cathode
JPS58129736A (en) * 1982-01-28 1983-08-02 Toshiba Corp Opto-electronic mirror cylinder
JP2003297272A (en) * 2002-04-04 2003-10-17 Ebara Corp Electron beam apparatus and method of manufacturing device using the same
JP2011040341A (en) * 2009-08-18 2011-02-24 Nuflare Technology Inc Electron gun, charged particle beam lithography system, and charged particle beam lithography method
JP2013239514A (en) * 2012-05-14 2013-11-28 Jeol Ltd Electron gun, drive device thereof and control method thereof
JP2020004557A (en) * 2018-06-27 2020-01-09 株式会社日立製作所 electronic microscope

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5818833A (en) * 1981-07-27 1983-02-03 Denki Kagaku Kogyo Kk Method of generating low temperature of high density electron beam and its system
JPS5823155A (en) * 1981-07-30 1983-02-10 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン Device for aligning and controlling charged particle beam
JPS5840729A (en) * 1981-09-02 1983-03-09 Denki Kagaku Kogyo Kk High brightness utilizing method from single crystal lanthanum boride cathode
JPH0418408B2 (en) * 1981-09-02 1992-03-27 Denki Kagaku Kogyo Kk
JPS58129736A (en) * 1982-01-28 1983-08-02 Toshiba Corp Opto-electronic mirror cylinder
JP2003297272A (en) * 2002-04-04 2003-10-17 Ebara Corp Electron beam apparatus and method of manufacturing device using the same
JP2011040341A (en) * 2009-08-18 2011-02-24 Nuflare Technology Inc Electron gun, charged particle beam lithography system, and charged particle beam lithography method
JP2013239514A (en) * 2012-05-14 2013-11-28 Jeol Ltd Electron gun, drive device thereof and control method thereof
JP2020004557A (en) * 2018-06-27 2020-01-09 株式会社日立製作所 electronic microscope

Also Published As

Publication number Publication date
JPH0156501B2 (en) 1989-11-30

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