JPS5763744A - Electron gun - Google Patents

Electron gun

Info

Publication number
JPS5763744A
JPS5763744A JP13806880A JP13806880A JPS5763744A JP S5763744 A JPS5763744 A JP S5763744A JP 13806880 A JP13806880 A JP 13806880A JP 13806880 A JP13806880 A JP 13806880A JP S5763744 A JPS5763744 A JP S5763744A
Authority
JP
Japan
Prior art keywords
electron emissive
chip
lanthanum hexaboride
film
limiting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13806880A
Other languages
Japanese (ja)
Inventor
Yasuo Furukawa
Masaki Yamabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13806880A priority Critical patent/JPS5763744A/en
Publication of JPS5763744A publication Critical patent/JPS5763744A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06Electron sources; Electron guns
    • H01J37/073Electron guns using field emission, photo emission, or secondary emission electron sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Solid Thermionic Cathode (AREA)

Abstract

PURPOSE:To improve the controllability of luminance and emittance with grid bias voltage by limiting an electron emissive surface of a lanthanum hexaboride chip only to the tip-top of the chip. CONSTITUTION:The surface of a tip-top of a lanthanum hexaboride chip 11 which serves as an electron emissive member is covered with an electron emissive surface limiting film 13 except a desired electron emissive surface 12. Carbon or zirconium boride of extremely limited reactivity with lanthanum hexaboride at an elevated temperature and of large work function for thermion emission is used as a material for the limiting film 13, and the film 13 is formed by highpolymer sintering method or spattering. Thus, the controllability of luminance and emittance can be improved, and the contamination in an exposing device and the increase of a high voltage power source capacity can be prevented.
JP13806880A 1980-10-02 1980-10-02 Electron gun Pending JPS5763744A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13806880A JPS5763744A (en) 1980-10-02 1980-10-02 Electron gun

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13806880A JPS5763744A (en) 1980-10-02 1980-10-02 Electron gun

Publications (1)

Publication Number Publication Date
JPS5763744A true JPS5763744A (en) 1982-04-17

Family

ID=15213216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13806880A Pending JPS5763744A (en) 1980-10-02 1980-10-02 Electron gun

Country Status (1)

Country Link
JP (1) JPS5763744A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5960952A (en) * 1982-09-30 1984-04-07 Fujitsu Ltd Electron gun for electron-beam exposure device
JPS6147038A (en) * 1984-07-02 1986-03-07 ジエイソン ジヨン キム Thermion cathode and method of producing same
JPS63172931U (en) * 1987-04-30 1988-11-10
JPH0794072A (en) * 1993-07-29 1995-04-07 Nec Kansai Ltd Hot cathode for electron radiation, its manufacture, and electron beam working device using it
EP1564774A1 (en) 2004-02-10 2005-08-17 NuFlare Technology, Inc. High brightness thermionic cathode
WO2007055154A1 (en) 2005-11-08 2007-05-18 Advantest Corporation Electron gun, electron beam exposure system and exposure method
EP2216797A1 (en) * 2007-11-30 2010-08-11 Denki Kagaku Kogyo Kabushiki Kaisha Electron emitting source and manufacturing method of electron emitting source
JP2014102929A (en) * 2012-11-19 2014-06-05 Nuflare Technology Inc Cathode and method for manufacturing cathode

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5960952A (en) * 1982-09-30 1984-04-07 Fujitsu Ltd Electron gun for electron-beam exposure device
JPS6147038A (en) * 1984-07-02 1986-03-07 ジエイソン ジヨン キム Thermion cathode and method of producing same
JPS63172931U (en) * 1987-04-30 1988-11-10
JPH0794072A (en) * 1993-07-29 1995-04-07 Nec Kansai Ltd Hot cathode for electron radiation, its manufacture, and electron beam working device using it
EP1564774B1 (en) * 2004-02-10 2012-04-25 NuFlare Technology, Inc. High brightness thermionic cathode
EP1564774A1 (en) 2004-02-10 2005-08-17 NuFlare Technology, Inc. High brightness thermionic cathode
JP2005228741A (en) * 2004-02-10 2005-08-25 Nuflare Technology Inc High-luminance thermionic cathode
WO2007055154A1 (en) 2005-11-08 2007-05-18 Advantest Corporation Electron gun, electron beam exposure system and exposure method
EP1947674A4 (en) * 2005-11-08 2011-12-07 Advantest Corp Electron gun, electron beam exposure system and exposure method
EP1947674A1 (en) * 2005-11-08 2008-07-23 Advantest Corporation Electron gun, electron beam exposure system and exposure method
EP2216797A1 (en) * 2007-11-30 2010-08-11 Denki Kagaku Kogyo Kabushiki Kaisha Electron emitting source and manufacturing method of electron emitting source
EP2216797A4 (en) * 2007-11-30 2012-01-04 Denki Kagaku Kogyo Kk Electron emitting source and manufacturing method of electron emitting source
US8456076B2 (en) 2007-11-30 2013-06-04 Denki Kagaku Kogyo Kabushiki Kaisha Electron emitting source and manufacturing method of electron emitting source
JP2014102929A (en) * 2012-11-19 2014-06-05 Nuflare Technology Inc Cathode and method for manufacturing cathode

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