JPS5763744A - Electron gun - Google Patents
Electron gunInfo
- Publication number
- JPS5763744A JPS5763744A JP13806880A JP13806880A JPS5763744A JP S5763744 A JPS5763744 A JP S5763744A JP 13806880 A JP13806880 A JP 13806880A JP 13806880 A JP13806880 A JP 13806880A JP S5763744 A JPS5763744 A JP S5763744A
- Authority
- JP
- Japan
- Prior art keywords
- electron emissive
- chip
- lanthanum hexaboride
- film
- limiting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Solid Thermionic Cathode (AREA)
Abstract
PURPOSE:To improve the controllability of luminance and emittance with grid bias voltage by limiting an electron emissive surface of a lanthanum hexaboride chip only to the tip-top of the chip. CONSTITUTION:The surface of a tip-top of a lanthanum hexaboride chip 11 which serves as an electron emissive member is covered with an electron emissive surface limiting film 13 except a desired electron emissive surface 12. Carbon or zirconium boride of extremely limited reactivity with lanthanum hexaboride at an elevated temperature and of large work function for thermion emission is used as a material for the limiting film 13, and the film 13 is formed by highpolymer sintering method or spattering. Thus, the controllability of luminance and emittance can be improved, and the contamination in an exposing device and the increase of a high voltage power source capacity can be prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13806880A JPS5763744A (en) | 1980-10-02 | 1980-10-02 | Electron gun |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13806880A JPS5763744A (en) | 1980-10-02 | 1980-10-02 | Electron gun |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5763744A true JPS5763744A (en) | 1982-04-17 |
Family
ID=15213216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13806880A Pending JPS5763744A (en) | 1980-10-02 | 1980-10-02 | Electron gun |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5763744A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5960952A (en) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | Electron gun for electron-beam exposure device |
JPS6147038A (en) * | 1984-07-02 | 1986-03-07 | ジエイソン ジヨン キム | Thermion cathode and method of producing same |
JPS63172931U (en) * | 1987-04-30 | 1988-11-10 | ||
JPH0794072A (en) * | 1993-07-29 | 1995-04-07 | Nec Kansai Ltd | Hot cathode for electron radiation, its manufacture, and electron beam working device using it |
EP1564774A1 (en) | 2004-02-10 | 2005-08-17 | NuFlare Technology, Inc. | High brightness thermionic cathode |
WO2007055154A1 (en) | 2005-11-08 | 2007-05-18 | Advantest Corporation | Electron gun, electron beam exposure system and exposure method |
EP2216797A1 (en) * | 2007-11-30 | 2010-08-11 | Denki Kagaku Kogyo Kabushiki Kaisha | Electron emitting source and manufacturing method of electron emitting source |
JP2014102929A (en) * | 2012-11-19 | 2014-06-05 | Nuflare Technology Inc | Cathode and method for manufacturing cathode |
-
1980
- 1980-10-02 JP JP13806880A patent/JPS5763744A/en active Pending
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5960952A (en) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | Electron gun for electron-beam exposure device |
JPS6147038A (en) * | 1984-07-02 | 1986-03-07 | ジエイソン ジヨン キム | Thermion cathode and method of producing same |
JPS63172931U (en) * | 1987-04-30 | 1988-11-10 | ||
JPH0794072A (en) * | 1993-07-29 | 1995-04-07 | Nec Kansai Ltd | Hot cathode for electron radiation, its manufacture, and electron beam working device using it |
EP1564774B1 (en) * | 2004-02-10 | 2012-04-25 | NuFlare Technology, Inc. | High brightness thermionic cathode |
EP1564774A1 (en) | 2004-02-10 | 2005-08-17 | NuFlare Technology, Inc. | High brightness thermionic cathode |
JP2005228741A (en) * | 2004-02-10 | 2005-08-25 | Nuflare Technology Inc | High-luminance thermionic cathode |
WO2007055154A1 (en) | 2005-11-08 | 2007-05-18 | Advantest Corporation | Electron gun, electron beam exposure system and exposure method |
EP1947674A4 (en) * | 2005-11-08 | 2011-12-07 | Advantest Corp | Electron gun, electron beam exposure system and exposure method |
EP1947674A1 (en) * | 2005-11-08 | 2008-07-23 | Advantest Corporation | Electron gun, electron beam exposure system and exposure method |
EP2216797A1 (en) * | 2007-11-30 | 2010-08-11 | Denki Kagaku Kogyo Kabushiki Kaisha | Electron emitting source and manufacturing method of electron emitting source |
EP2216797A4 (en) * | 2007-11-30 | 2012-01-04 | Denki Kagaku Kogyo Kk | Electron emitting source and manufacturing method of electron emitting source |
US8456076B2 (en) | 2007-11-30 | 2013-06-04 | Denki Kagaku Kogyo Kabushiki Kaisha | Electron emitting source and manufacturing method of electron emitting source |
JP2014102929A (en) * | 2012-11-19 | 2014-06-05 | Nuflare Technology Inc | Cathode and method for manufacturing cathode |
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