JPS6433833A - Electron emitting element - Google Patents

Electron emitting element

Info

Publication number
JPS6433833A
JPS6433833A JP19136187A JP19136187A JPS6433833A JP S6433833 A JPS6433833 A JP S6433833A JP 19136187 A JP19136187 A JP 19136187A JP 19136187 A JP19136187 A JP 19136187A JP S6433833 A JPS6433833 A JP S6433833A
Authority
JP
Japan
Prior art keywords
electron emitting
electrode
emitting electrode
tip section
extracting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19136187A
Other languages
Japanese (ja)
Inventor
Ichiro Nomura
Hidetoshi Suzuki
Seishiro Yoshioka
Toshihiko Takeda
Tetsuya Kaneko
Yoshikazu Sakano
Kojiro Yokono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP19136187A priority Critical patent/JPS6433833A/en
Publication of JPS6433833A publication Critical patent/JPS6433833A/en
Pending legal-status Critical Current

Links

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

PURPOSE:To reduce the deterioration of a tip section, obtain a large discharge current, produce an element easily, and make it thin, small-sized and lightweight by providing an extracting electrode between an electron emitting electrode and a secondary electron emitting electrode and precisely forming the tip section of the electron emitting electrode and the opening section of the extracting electrode. CONSTITUTION:An extracting electrode 6 with an opening section 6a is provided between the tip section 2a of an electron extracting electrode 2 and a secondary electron emitting electrode 3, and at least the tip section 2a is machined to reduce its radius of curvature by the fine machining technique. When the low voltage is applied to this extracting electrode, electrons 4 are stably emitted, when the high voltage is applied to the secondary electron emitting electrode 3, electrons 4 hit the secondary electron emitting electrode 3 to emit many secondary electrons 5 in the rectangular direction to an insulating substrate 1. The voltage applied across the electron emitting electrode and the extracting electrode can be thereby lowered, the deterioration of the tip section can be sharply reduced, and an element can be easily made thin, small-sized and lightweight.
JP19136187A 1987-07-29 1987-07-29 Electron emitting element Pending JPS6433833A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19136187A JPS6433833A (en) 1987-07-29 1987-07-29 Electron emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19136187A JPS6433833A (en) 1987-07-29 1987-07-29 Electron emitting element

Publications (1)

Publication Number Publication Date
JPS6433833A true JPS6433833A (en) 1989-02-03

Family

ID=16273300

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19136187A Pending JPS6433833A (en) 1987-07-29 1987-07-29 Electron emitting element

Country Status (1)

Country Link
JP (1) JPS6433833A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4115890A1 (en) * 1990-05-17 1991-11-21 Futaba Denshi Kogyo Kk ELECTRON-EMITTING COMPONENT
JPH04171628A (en) * 1990-11-05 1992-06-18 Mitsubishi Electric Corp Minute vacuum tube
US5144191A (en) * 1991-06-12 1992-09-01 Mcnc Horizontal microelectronic field emission devices
US5148079A (en) * 1990-03-01 1992-09-15 Matsushita Electric Industrial Co., Ltd. Planar type cold cathode with sharp tip ends and manufacturing method therefor
JPH05504021A (en) * 1990-02-09 1993-06-24 モトローラ・インコーポレーテッド Sealed field emission device
US5281891A (en) * 1991-02-22 1994-01-25 Matsushita Electric Industrial Co., Ltd. Electron emission element
US5899548A (en) * 1994-10-19 1999-05-04 Sharp Kabushiki Kaisha Liquid crystal display device and method for manufacturing same
US5917563A (en) * 1995-10-16 1999-06-29 Sharp Kabushiki Kaisha Liquid crystal display device having an insulation film made of organic material between an additional capacity and a bus line
US5953085A (en) * 1996-11-22 1999-09-14 Sharp Kabushiki Kaisha Liquid crystal display device having a storage capacitor
US5956103A (en) * 1996-06-19 1999-09-21 Sharp Kabushiki Kaisha Active matrix substrate with the double layered structure
US6762541B1 (en) 1999-05-14 2004-07-13 Kabushiki Kaisha Toshiba Electron-emitting device and production process thereof
JP2012142267A (en) * 2010-12-31 2012-07-26 Qinghua Univ Field emission cathode element and field emission display device including the same
US8754995B2 (en) 2008-10-15 2014-06-17 Sony Corporation Liquid-crystal display device

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05504021A (en) * 1990-02-09 1993-06-24 モトローラ・インコーポレーテッド Sealed field emission device
US5148079A (en) * 1990-03-01 1992-09-15 Matsushita Electric Industrial Co., Ltd. Planar type cold cathode with sharp tip ends and manufacturing method therefor
DE4115890A1 (en) * 1990-05-17 1991-11-21 Futaba Denshi Kogyo Kk ELECTRON-EMITTING COMPONENT
US5189341A (en) * 1990-05-17 1993-02-23 Futaba Denshi Kogyo Kabushiki Kaisha Electron emitting element
JPH04171628A (en) * 1990-11-05 1992-06-18 Mitsubishi Electric Corp Minute vacuum tube
US5281891A (en) * 1991-02-22 1994-01-25 Matsushita Electric Industrial Co., Ltd. Electron emission element
US5144191A (en) * 1991-06-12 1992-09-01 Mcnc Horizontal microelectronic field emission devices
US5899548A (en) * 1994-10-19 1999-05-04 Sharp Kabushiki Kaisha Liquid crystal display device and method for manufacturing same
US7057691B2 (en) 1995-10-16 2006-06-06 Sharp Kabushiki Kaisha Semiconductor device
US6141066A (en) * 1995-10-16 2000-10-31 Sharp Kabushiki Kaisha Liquid crystal display device with active matrix substrate using source/drain electrode as capacitor conductor
US6359665B1 (en) 1995-10-16 2002-03-19 Sharp Kabushiki Kaisha Switching element substrate having additional capacity and manufacturing method thereof
US6806932B2 (en) 1995-10-16 2004-10-19 Sharp Kabushiki Kaisha Semiconductor device
US5917563A (en) * 1995-10-16 1999-06-29 Sharp Kabushiki Kaisha Liquid crystal display device having an insulation film made of organic material between an additional capacity and a bus line
US7190418B2 (en) 1995-10-16 2007-03-13 Sharp Kabushiki Kaisha Semiconductor device
US5956103A (en) * 1996-06-19 1999-09-21 Sharp Kabushiki Kaisha Active matrix substrate with the double layered structure
US5953085A (en) * 1996-11-22 1999-09-14 Sharp Kabushiki Kaisha Liquid crystal display device having a storage capacitor
US6762541B1 (en) 1999-05-14 2004-07-13 Kabushiki Kaisha Toshiba Electron-emitting device and production process thereof
US8754995B2 (en) 2008-10-15 2014-06-17 Sony Corporation Liquid-crystal display device
JP2012142267A (en) * 2010-12-31 2012-07-26 Qinghua Univ Field emission cathode element and field emission display device including the same
US8581486B2 (en) 2010-12-31 2013-11-12 Tsinghua University Field emission device and field emission display

Similar Documents

Publication Publication Date Title
JPS6433833A (en) Electron emitting element
DE3563577D1 (en) Semiconductor device for producing an electron beam
JPS57187849A (en) Electron gun
JPS5367972A (en) Electrode for elctric discharge lamp
DE3863403D1 (en) SWITCH WITH ELECTROMECHANICALLY IGNITIONED SPARK RANGE.
KR960015662A (en) Electron Emission Device with Offset Control Electrode
BR9805925A (en) Cold electrode for gas discharges
KR960030290A (en) Aging method of Field Emission Cold Cathode
MY106537A (en) Structures and processes for fabricating field emission cathodes.
EP0264709A3 (en) Hollow-anode ion-electron source
EP0772218A3 (en) Linear beam microwave tube with planar cold cathode as an electron beam source
EP0259878A3 (en) Electron emission element
EP0378338A3 (en) Discharge tube
RU2209483C2 (en) Electron-and-ion source
EP0320185A3 (en) Thyratrons
JPS6413183A (en) Emission display element
EP0361357A3 (en) Discharge lamp
JPS6486430A (en) High-frequency oscillator
JPS57141839A (en) Cathode made of lanthanum hexaboride single crystal
JPS646344A (en) Electron gun structure body for linear beam type electron tube
JPS6443055A (en) Electromagnetic accelerator
JPS55126956A (en) Compact flashing tube
JPS6454635A (en) Structure for thermionic cathode
FR2356264A1 (en) High power electron tube - has control electrode with equipotential electric field surfaces
JPS6489517A (en) Etching device