JPS5645027A - Electron beam lithography - Google Patents

Electron beam lithography

Info

Publication number
JPS5645027A
JPS5645027A JP12122079A JP12122079A JPS5645027A JP S5645027 A JPS5645027 A JP S5645027A JP 12122079 A JP12122079 A JP 12122079A JP 12122079 A JP12122079 A JP 12122079A JP S5645027 A JPS5645027 A JP S5645027A
Authority
JP
Japan
Prior art keywords
scanning
width
electron beam
scanning direction
pitch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12122079A
Other languages
Japanese (ja)
Inventor
Makoto Nakase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP12122079A priority Critical patent/JPS5645027A/en
Publication of JPS5645027A publication Critical patent/JPS5645027A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To permit a simple electron beam lithography to reduce the proximity effect and to obtain a desired resist pattern by setting the half-width of an electron beam spot in the scanning direction so as to be smaller than the scanning pitch. CONSTITUTION:When lithography is performed by scanning with a spotlike electron beam, the half-width of the electron beam spot at least in the scanning direction is set to be smaller than the scanning pitch, preferably, the half-width is set to be 2/5-3/5 of the scanning pitch. This permits the proximity effect to be greatly reduced, and thus any pattern, large or small, to be obtained more close to a desired geometry and dimension. Moreover, it is effective to set the half-width A1 in the direction perpendicular to the scanning direction so as to be almost equal to the scanning pitch B, and the half-width A2 in the scanning direction to be a smaller ellipse than the scanning pitch B. This permits the pattern edge perpendicular to the scanning direction to be almost straight as well as the proximity effect to be reduced by the difference between the half-width A2 and the scanning pitch B, so that a desired resist pattern is obtained.
JP12122079A 1979-09-20 1979-09-20 Electron beam lithography Pending JPS5645027A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12122079A JPS5645027A (en) 1979-09-20 1979-09-20 Electron beam lithography

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12122079A JPS5645027A (en) 1979-09-20 1979-09-20 Electron beam lithography

Publications (1)

Publication Number Publication Date
JPS5645027A true JPS5645027A (en) 1981-04-24

Family

ID=14805855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12122079A Pending JPS5645027A (en) 1979-09-20 1979-09-20 Electron beam lithography

Country Status (1)

Country Link
JP (1) JPS5645027A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0247404U (en) * 1988-09-28 1990-03-30
JPH0558868U (en) * 1992-01-17 1993-08-03 株式会社神戸製鋼所 Gas engine
JP2005032838A (en) * 2003-07-08 2005-02-03 Canon Inc Method and device for charged particle beam lithography and method of manufacturing device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136188A (en) * 1974-07-22 1976-03-26 Varian Associates

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136188A (en) * 1974-07-22 1976-03-26 Varian Associates

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0247404U (en) * 1988-09-28 1990-03-30
JPH0558868U (en) * 1992-01-17 1993-08-03 株式会社神戸製鋼所 Gas engine
JP2005032838A (en) * 2003-07-08 2005-02-03 Canon Inc Method and device for charged particle beam lithography and method of manufacturing device
JP4494734B2 (en) * 2003-07-08 2010-06-30 キヤノン株式会社 Charged particle beam drawing method, charged particle beam exposure apparatus, and device manufacturing method

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