JPS6489433A - Resist-pattern forming method - Google Patents

Abstract

PURPOSE:To make the difference between sizes in X-Y directions of a resist pattern very small and to improve the machining accuracy of the pattern, in a resist-pattern forming method, by making the beam width in the beam scanning direction narrower than a specified size, and performing exposure. CONSTITUTION:When resist is exposed, a beam width in the beam scanning direction is made narrower than 0.5mum at the least. With respect to the total energy, which is received with the resist, the amount in the direction Y is smaller than the amount in the direction X. When the level in the direction X is made to be 1, the level in the direction Y is about 0.8. Meanwhile, the beam distribution becomes steep since the beam width is made narrow. The length X1 of a blanking pattern is about the same as a conventional length X0. Meanwhile, the length Y1 of a blanking pattern in the direction Y is made longer than a conventional length Y0 slightly by Y. Therefore the difference in sizes in the X-Y directions becomes smaller than the difference in conventional sizes. Thus, pattern machining accuracy can be improved.