JPS56123639A - Electron gun - Google Patents

Electron gun

Info

Publication number
JPS56123639A
JPS56123639A JP2764180A JP2764180A JPS56123639A JP S56123639 A JPS56123639 A JP S56123639A JP 2764180 A JP2764180 A JP 2764180A JP 2764180 A JP2764180 A JP 2764180A JP S56123639 A JPS56123639 A JP S56123639A
Authority
JP
Japan
Prior art keywords
facets
cathode
tip
crystal
evaporation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2764180A
Other languages
Japanese (ja)
Inventor
Isao Sasaki
Hitoshi Mikami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2764180A priority Critical patent/JPS56123639A/en
Publication of JPS56123639A publication Critical patent/JPS56123639A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/13—Solid thermionic cathodes
    • H01J1/15—Cathodes heated directly by an electric current
    • H01J1/16—Cathodes heated directly by an electric current characterised by the shape

Landscapes

  • Electron Sources, Ion Sources (AREA)
  • Solid Thermionic Cathode (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To maintain characteristic stabilization of emission electrons for a long time in such a way that the tip of the cathode composed of single crystal chips is formed on the surface the minute facets which are emissive of electrons and deposited by evaporation from the crystal surfaces. CONSTITUTION:The structure is made up so that LaB6 single crystal chips 1 which have (100) azimuths as crystal axis are used as the cathode, and its tip includes the plural number of faces (111) so-called ''facets'' formed in asperity. These faces are the same ones which are produced by evaporation from the crystal surfaces by using the cathode, and the convex parts enclosed by four facets 5a-5d are formed into a square pyramidal shape. These facets are precisely formed, and even if they are served for a long time after that, the chip tip form can be always maintained. In consequence, emission electron characteristic can be stabilized.
JP2764180A 1980-03-05 1980-03-05 Electron gun Pending JPS56123639A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2764180A JPS56123639A (en) 1980-03-05 1980-03-05 Electron gun

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2764180A JPS56123639A (en) 1980-03-05 1980-03-05 Electron gun

Publications (1)

Publication Number Publication Date
JPS56123639A true JPS56123639A (en) 1981-09-28

Family

ID=12226554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2764180A Pending JPS56123639A (en) 1980-03-05 1980-03-05 Electron gun

Country Status (1)

Country Link
JP (1) JPS56123639A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008204868A (en) * 2007-02-21 2008-09-04 Nano Geometry Kenkyusho:Kk Manufacturing method of field emission electron gun, field emission electron gun by the same, regeneration method of charged particle beam device and field emission electron gun, charged particle beam device and field emission electron gun by the same, and multiply-divided emitter electrode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008204868A (en) * 2007-02-21 2008-09-04 Nano Geometry Kenkyusho:Kk Manufacturing method of field emission electron gun, field emission electron gun by the same, regeneration method of charged particle beam device and field emission electron gun, charged particle beam device and field emission electron gun by the same, and multiply-divided emitter electrode

Similar Documents

Publication Publication Date Title
JPS55154044A (en) Electrode structure of electron gun and its manufacture
DE3563577D1 (en) Semiconductor device for producing an electron beam
JPS5679828A (en) Electron gun
JPS56123639A (en) Electron gun
JPS5588233A (en) Hexaboride single crystal cathode
GB1455387A (en) Cathode ray storage tube having a target dielectric provided with particulate segments of collector electrode extending therethrough
JPS5214347A (en) Field emission electron gun
JPS57128433A (en) High luminance electron gun
JPS5693244A (en) Electron gun
JPS56147346A (en) Electron source
JPS5674388A (en) Cutting method
JPS5550558A (en) Operating method of scanning conversion type storage tube
JPS56132736A (en) Electron gun
JPS56145639A (en) Electron gun
JPS5490963A (en) Index color receiving tube
JPS5292473A (en) Main lens electric field forming method of inline type 3 beam electron gun
JPS544567A (en) Growing apparatus of ion beam crystal
JPS54107884A (en) Vacuum depositing method for silicon
JPS5740844A (en) Thermoelectron emission type electron gun
JPS5418679A (en) Electron impact type ion source device
JPS51124362A (en) Field emission type electron gun
JPS5643791A (en) Semiconductor laser and method of producing thereof
JPS6437061A (en) Photodetector
JPS54115058A (en) Getter for cathode ray tube
JPS55113245A (en) Flat type cathode ray tube