JPS5690500A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS5690500A JPS5690500A JP16852179A JP16852179A JPS5690500A JP S5690500 A JPS5690500 A JP S5690500A JP 16852179 A JP16852179 A JP 16852179A JP 16852179 A JP16852179 A JP 16852179A JP S5690500 A JPS5690500 A JP S5690500A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- data
- error
- error correction
- read
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000001514 detection method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Static Random-Access Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
PURPOSE: To reduce read-out time and make reliability higher by incorporating an error correction system so as to output correction data by performing decoding processing only when there are data in the read-out data.
CONSTITUTION: An error correction encoding circuit 6 and an error correction decoding circuit 7 are provided, besides a memory cell part 1, a sensing circuit 2, an address decoder 3, a data input circuit 4 and a data output circuit 5. The read-out data X1WX8 from the sensing circuit 2 are directly sent to the data output circuit 5; at the same time, the data X1X8 and the error correction codes Y1WY4 are sent to the error correction decoding circuit 7. In said circuit 7, error checking is performed and only when there is an error, an error detection signal D is outputted to an error detection signal line 8 and correction data X1'WX8' are formed and are sent to said circuit 5. All the constituting elements are integrated on the same semiconductor substrate.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16852179A JPS5690500A (en) | 1979-12-25 | 1979-12-25 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16852179A JPS5690500A (en) | 1979-12-25 | 1979-12-25 | Semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5690500A true JPS5690500A (en) | 1981-07-22 |
Family
ID=15869560
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16852179A Pending JPS5690500A (en) | 1979-12-25 | 1979-12-25 | Semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5690500A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59201296A (en) * | 1983-04-28 | 1984-11-14 | Fujitsu Ltd | Error correction checking system of memory provided with ecc |
JPS61126696A (en) * | 1984-11-22 | 1986-06-14 | Toshiba Corp | Semiconductor memory device |
KR100801083B1 (en) | 2006-12-28 | 2008-02-05 | 삼성전자주식회사 | Cyclic redundancy check code generating circuit, semiconductor memory device and driving method thereof |
-
1979
- 1979-12-25 JP JP16852179A patent/JPS5690500A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59201296A (en) * | 1983-04-28 | 1984-11-14 | Fujitsu Ltd | Error correction checking system of memory provided with ecc |
JPS6240742B2 (en) * | 1983-04-28 | 1987-08-29 | Fujitsu Ltd | |
JPS61126696A (en) * | 1984-11-22 | 1986-06-14 | Toshiba Corp | Semiconductor memory device |
KR100801083B1 (en) | 2006-12-28 | 2008-02-05 | 삼성전자주식회사 | Cyclic redundancy check code generating circuit, semiconductor memory device and driving method thereof |
US8321777B2 (en) | 2006-12-28 | 2012-11-27 | Samsung Electronics Co., Ltd. | Cyclic redundancy check code generating circuit, semiconductor memory device, and method of driving semiconductor memory device |
US8966338B2 (en) | 2006-12-28 | 2015-02-24 | Samsung Electronics Co., Ltd. | Cyclic redundancy check code generating circuit, semiconductor memory device, and method of driving semiconductor memory device |
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