JPS5688317A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5688317A
JPS5688317A JP16589779A JP16589779A JPS5688317A JP S5688317 A JPS5688317 A JP S5688317A JP 16589779 A JP16589779 A JP 16589779A JP 16589779 A JP16589779 A JP 16589779A JP S5688317 A JPS5688317 A JP S5688317A
Authority
JP
Japan
Prior art keywords
film
silicon
semiconductor device
single crystal
noncrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16589779A
Other languages
English (en)
Inventor
Yoshiiku Togei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16589779A priority Critical patent/JPS5688317A/ja
Publication of JPS5688317A publication Critical patent/JPS5688317A/ja
Pending legal-status Critical Current

Links

Classifications

    • H10P34/42—

Landscapes

  • Recrystallisation Techniques (AREA)
JP16589779A 1979-12-20 1979-12-20 Manufacture of semiconductor device Pending JPS5688317A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16589779A JPS5688317A (en) 1979-12-20 1979-12-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16589779A JPS5688317A (en) 1979-12-20 1979-12-20 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5688317A true JPS5688317A (en) 1981-07-17

Family

ID=15821049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16589779A Pending JPS5688317A (en) 1979-12-20 1979-12-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5688317A (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58206121A (ja) * 1982-05-27 1983-12-01 Toshiba Corp 薄膜半導体装置の製造方法
US4498951A (en) * 1981-10-09 1985-02-12 Hitachi, Ltd. Method of manufacturing single-crystal film
JPS6235569A (ja) * 1985-08-09 1987-02-16 Agency Of Ind Science & Technol Ｍｉｓ型トランジスタ及びその製造方法
JPH01286366A (ja) * 1988-05-12 1989-11-17 Mitsubishi Electric Corp 半導体装置の製造方法
JPH01287964A (ja) * 1988-05-13 1989-11-20 Seiko Epson Corp 半導体装置の製造方法
JPH05136169A (ja) * 1992-01-27 1993-06-01 Seiko Epson Corp 薄膜トランジスタの製造方法
JPH06314698A (ja) * 1993-03-05 1994-11-08 Semiconductor Energy Lab Co Ltd 薄膜半導体装置およびその作製方法
JPH06314785A (ja) * 1993-03-05 1994-11-08 Semiconductor Energy Lab Co Ltd 薄膜半導体装置およびその作製方法
JP2001291870A (ja) * 2000-04-06 2001-10-19 Sony Corp 薄膜トランジスタ及びその製造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4498951A (en) * 1981-10-09 1985-02-12 Hitachi, Ltd. Method of manufacturing single-crystal film
JPS58206121A (ja) * 1982-05-27 1983-12-01 Toshiba Corp 薄膜半導体装置の製造方法
JPS6235569A (ja) * 1985-08-09 1987-02-16 Agency Of Ind Science & Technol Ｍｉｓ型トランジスタ及びその製造方法
JPH01286366A (ja) * 1988-05-12 1989-11-17 Mitsubishi Electric Corp 半導体装置の製造方法
JPH01287964A (ja) * 1988-05-13 1989-11-20 Seiko Epson Corp 半導体装置の製造方法
JPH05136169A (ja) * 1992-01-27 1993-06-01 Seiko Epson Corp 薄膜トランジスタの製造方法
JPH06314698A (ja) * 1993-03-05 1994-11-08 Semiconductor Energy Lab Co Ltd 薄膜半導体装置およびその作製方法
JPH06314785A (ja) * 1993-03-05 1994-11-08 Semiconductor Energy Lab Co Ltd 薄膜半導体装置およびその作製方法
JP2001291870A (ja) * 2000-04-06 2001-10-19 Sony Corp 薄膜トランジスタ及びその製造方法

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