JPS5687367A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5687367A
JPS5687367A JP16498879A JP16498879A JPS5687367A JP S5687367 A JPS5687367 A JP S5687367A JP 16498879 A JP16498879 A JP 16498879A JP 16498879 A JP16498879 A JP 16498879A JP S5687367 A JPS5687367 A JP S5687367A
Authority
JP
Japan
Prior art keywords
groove
layer
pattern
film
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16498879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS621267B2 (enrdf_load_stackoverflow
Inventor
Takashi Matsumoto
Kunihiko Wada
Tsutomu Ogawa
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16498879A priority Critical patent/JPS5687367A/ja
Publication of JPS5687367A publication Critical patent/JPS5687367A/ja
Publication of JPS621267B2 publication Critical patent/JPS621267B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP16498879A 1979-12-19 1979-12-19 Manufacture of semiconductor device Granted JPS5687367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16498879A JPS5687367A (en) 1979-12-19 1979-12-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16498879A JPS5687367A (en) 1979-12-19 1979-12-19 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5687367A true JPS5687367A (en) 1981-07-15
JPS621267B2 JPS621267B2 (enrdf_load_stackoverflow) 1987-01-12

Family

ID=15803695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16498879A Granted JPS5687367A (en) 1979-12-19 1979-12-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5687367A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS621267B2 (enrdf_load_stackoverflow) 1987-01-12

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