JPS621267B2 - - Google Patents
Info
- Publication number
- JPS621267B2 JPS621267B2 JP54164988A JP16498879A JPS621267B2 JP S621267 B2 JPS621267 B2 JP S621267B2 JP 54164988 A JP54164988 A JP 54164988A JP 16498879 A JP16498879 A JP 16498879A JP S621267 B2 JPS621267 B2 JP S621267B2
- Authority
- JP
- Japan
- Prior art keywords
- groove
- mask pattern
- oxidation
- layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16498879A JPS5687367A (en) | 1979-12-19 | 1979-12-19 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16498879A JPS5687367A (en) | 1979-12-19 | 1979-12-19 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5687367A JPS5687367A (en) | 1981-07-15 |
| JPS621267B2 true JPS621267B2 (enrdf_load_stackoverflow) | 1987-01-12 |
Family
ID=15803695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16498879A Granted JPS5687367A (en) | 1979-12-19 | 1979-12-19 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5687367A (enrdf_load_stackoverflow) |
-
1979
- 1979-12-19 JP JP16498879A patent/JPS5687367A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5687367A (en) | 1981-07-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI779568B (zh) | 碳化矽ｍｏｓｆｅｔ裝置的製造方法 | |
| JPH05206451A (ja) | Ｍｏｓｆｅｔおよびその製造方法 | |
| JPH0575117A (ja) | 半導体装置及びその製造方法 | |
| JPS61247051A (ja) | 半導体装置の製造方法 | |
| JPS5951153B2 (ja) | 半導体装置の製造方法 | |
| JPH04277617A (ja) | 半導体装置の製造方法 | |
| JPS621267B2 (enrdf_load_stackoverflow) | ||
| JPS6310896B2 (enrdf_load_stackoverflow) | ||
| JPH07297275A (ja) | 半導体装置の製造方法 | |
| JPS5933271B2 (ja) | 半導体装置の製造方法 | |
| JP2594121B2 (ja) | 半導体装置の製造方法 | |
| JPS6294985A (ja) | Ｍｏｓ型半導体装置の製造方法 | |
| JP5187988B2 (ja) | 半導体装置及びその製造方法 | |
| JPH1174513A (ja) | 絶縁ゲート型半導体装置およびその製造方法 | |
| JPH05259446A (ja) | 半導体装置の製造方法 | |
| JPS63177565A (ja) | 半導体集積回路装置およびその製造方法 | |
| JP3848782B2 (ja) | 半導体装置の製造方法 | |
| JPS6147650A (ja) | 半導体集積回路装置の製造方法 | |
| JP2512760B2 (ja) | 半導体集積回路の製法 | |
| JPS6126223B2 (enrdf_load_stackoverflow) | ||
| JPS5951152B2 (ja) | 半導体装置の製造方法 | |
| JPS6390150A (ja) | 半導体装置の製造方法 | |
| JPH0330307B2 (enrdf_load_stackoverflow) | ||
| JPH0253950B2 (enrdf_load_stackoverflow) | ||
| JPH06151579A (ja) | 半導体装置及びその製造方法 |