JPS621267B2 - - Google Patents

Info

Publication number
JPS621267B2
JPS621267B2 JP54164988A JP16498879A JPS621267B2 JP S621267 B2 JPS621267 B2 JP S621267B2 JP 54164988 A JP54164988 A JP 54164988A JP 16498879 A JP16498879 A JP 16498879A JP S621267 B2 JPS621267 B2 JP S621267B2
Authority
JP
Japan
Prior art keywords
groove
mask pattern
oxidation
layer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54164988A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5687367A (en
Inventor
Takashi Matsumoto
Kunihiko Wada
Tsutomu Ogawa
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16498879A priority Critical patent/JPS5687367A/ja
Publication of JPS5687367A publication Critical patent/JPS5687367A/ja
Publication of JPS621267B2 publication Critical patent/JPS621267B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149Source or drain regions of field-effect devices
    • H10D62/151Source or drain regions of field-effect devices of IGFETs 

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP16498879A 1979-12-19 1979-12-19 Manufacture of semiconductor device Granted JPS5687367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16498879A JPS5687367A (en) 1979-12-19 1979-12-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16498879A JPS5687367A (en) 1979-12-19 1979-12-19 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5687367A JPS5687367A (en) 1981-07-15
JPS621267B2 true JPS621267B2 (enrdf_load_stackoverflow) 1987-01-12

Family

ID=15803695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16498879A Granted JPS5687367A (en) 1979-12-19 1979-12-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5687367A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS5687367A (en) 1981-07-15

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