JPS5687354A - Formation of resistor body - Google Patents

Formation of resistor body

Info

Publication number
JPS5687354A
JPS5687354A JP16440679A JP16440679A JPS5687354A JP S5687354 A JPS5687354 A JP S5687354A JP 16440679 A JP16440679 A JP 16440679A JP 16440679 A JP16440679 A JP 16440679A JP S5687354 A JPS5687354 A JP S5687354A
Authority
JP
Japan
Prior art keywords
polycrystalline
film
resistor
resistance value
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16440679A
Other languages
English (en)
Inventor
Keiichi Kagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP16440679A priority Critical patent/JPS5687354A/ja
Publication of JPS5687354A publication Critical patent/JPS5687354A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP16440679A 1979-12-17 1979-12-17 Formation of resistor body Pending JPS5687354A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16440679A JPS5687354A (en) 1979-12-17 1979-12-17 Formation of resistor body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16440679A JPS5687354A (en) 1979-12-17 1979-12-17 Formation of resistor body

Publications (1)

Publication Number Publication Date
JPS5687354A true JPS5687354A (en) 1981-07-15

Family

ID=15792526

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16440679A Pending JPS5687354A (en) 1979-12-17 1979-12-17 Formation of resistor body

Country Status (1)

Country Link
JP (1) JPS5687354A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842273A (ja) * 1981-09-07 1983-03-11 Nec Corp 半導体装置の製造方法
US4560419A (en) * 1984-05-30 1985-12-24 Inmos Corporation Method of making polysilicon resistors with a low thermal activation energy
US4679170A (en) * 1984-05-30 1987-07-07 Inmos Corporation Resistor with low thermal activation energy
JPS63114159A (ja) * 1986-08-08 1988-05-19 シリコニクス　インコ−ポレイテツド トリム可能な高い値の多結晶シリコン抵抗
JPH02278865A (ja) * 1989-04-20 1990-11-15 Nec Corp 半導体装置及びその製造方法
KR20040044725A (ko) * 2002-11-21 2004-05-31 삼성전자주식회사 저농도 이온 도핑된 실리콘 저항 측정용 샘플 및 이의제조 방법

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842273A (ja) * 1981-09-07 1983-03-11 Nec Corp 半導体装置の製造方法
US4560419A (en) * 1984-05-30 1985-12-24 Inmos Corporation Method of making polysilicon resistors with a low thermal activation energy
US4679170A (en) * 1984-05-30 1987-07-07 Inmos Corporation Resistor with low thermal activation energy
JPS63114159A (ja) * 1986-08-08 1988-05-19 シリコニクス　インコ−ポレイテツド トリム可能な高い値の多結晶シリコン抵抗
JPH02278865A (ja) * 1989-04-20 1990-11-15 Nec Corp 半導体装置及びその製造方法
KR20040044725A (ko) * 2002-11-21 2004-05-31 삼성전자주식회사 저농도 이온 도핑된 실리콘 저항 측정용 샘플 및 이의제조 방법

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