JPS5754368A - Handotaisochinoseizohoho - Google Patents
HandotaisochinoseizohohoInfo
- Publication number
- JPS5754368A JPS5754368A JP13049480A JP13049480A JPS5754368A JP S5754368 A JPS5754368 A JP S5754368A JP 13049480 A JP13049480 A JP 13049480A JP 13049480 A JP13049480 A JP 13049480A JP S5754368 A JPS5754368 A JP S5754368A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- specific resistance
- pulled
- heat treatment
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 6
- 238000000034 method Methods 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000005259 measurement Methods 0.000 abstract 1
- 230000007935 neutral effect Effects 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13049480A JPS5754368A (ja) | 1980-09-19 | 1980-09-19 | Handotaisochinoseizohoho |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13049480A JPS5754368A (ja) | 1980-09-19 | 1980-09-19 | Handotaisochinoseizohoho |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5754368A true JPS5754368A (ja) | 1982-03-31 |
Family
ID=15035598
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13049480A Pending JPS5754368A (ja) | 1980-09-19 | 1980-09-19 | Handotaisochinoseizohoho |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5754368A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110400859A (zh) * | 2019-08-23 | 2019-11-01 | 深圳市星华灿科技有限公司 | 一种红外三极管芯片制造工艺 |
| CN110473923A (zh) * | 2019-08-23 | 2019-11-19 | 深圳市星华灿科技有限公司 | 一种红外光敏三极管芯片 |
-
1980
- 1980-09-19 JP JP13049480A patent/JPS5754368A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110400859A (zh) * | 2019-08-23 | 2019-11-01 | 深圳市星华灿科技有限公司 | 一种红外三极管芯片制造工艺 |
| CN110473923A (zh) * | 2019-08-23 | 2019-11-19 | 深圳市星华灿科技有限公司 | 一种红外光敏三极管芯片 |
| CN110400859B (zh) * | 2019-08-23 | 2020-06-23 | 深圳市星华灿科技有限公司 | 一种红外三极管芯片制造工艺 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5754368A (ja) | Handotaisochinoseizohoho | |
| JPS559414A (en) | Manufacturing method of semiconductor device | |
| Yeh | Thermal oxidation of silicon | |
| JPS57194525A (en) | Manufacture of semiconductor device | |
| JPS5687354A (en) | Formation of resistor body | |
| JPS57167669A (en) | Capacitor and manufacture thereof | |
| JPS56157022A (en) | Manufacture of semiconductor device | |
| JPS57211737A (en) | Manufacture of semiconductor substrate | |
| JPS5458381A (en) | Manufacture for semiconductor device | |
| JPS649615A (en) | Manufacture of semiconductor device | |
| JPS5754333A (ja) | Handotaisochitosonoseizohoho | |
| JPS57153438A (en) | Manufacture of semiconductor substrate | |
| JPS57130448A (en) | Manufacture of semiconductor device | |
| HEIJNEN et al. | Measurement and calculation of parameters in the silox diffusion process(semiconductor devices) | |
| JPS5693370A (en) | Manufacture of mos-type semiconductor device | |
| JPS5687362A (en) | Manufacture of semiconductor device | |
| JPS55143039A (en) | Treating method of semiconductor wafer with heat | |
| JPS57201032A (en) | Silicon single crystal semiconductor device | |
| JPS56116618A (en) | Manufacture of semiconductor device | |
| JPS5693358A (en) | Manufacture of resistor | |
| JPS5555524A (en) | Method of manufacturing semiconductor device | |
| JPS5346292A (en) | Production of semiconductor device | |
| JPS55157264A (en) | Manufacturing method for semiconductor device | |
| JPS5651871A (en) | Manufacture of complementary type mos semiconductor device | |
| JPS54138382A (en) | Manufacture for semiconductor integrated circuit device |