JPS5683033A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5683033A
JPS5683033A JP5206880A JP5206880A JPS5683033A JP S5683033 A JPS5683033 A JP S5683033A JP 5206880 A JP5206880 A JP 5206880A JP 5206880 A JP5206880 A JP 5206880A JP S5683033 A JPS5683033 A JP S5683033A
Authority
JP
Japan
Prior art keywords
plasma processing
gas
semiconductor
uniformalized
volume
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5206880A
Other languages
Japanese (ja)
Inventor
Itaru Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP5206880A priority Critical patent/JPS5683033A/en
Publication of JPS5683033A publication Critical patent/JPS5683033A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To uniformalize both the volume of the plasma processing and the characteristics of the semiconductor device by a method wherein the feeding quantity of reaction gas from a gas feeder arranged facing to a semiconductor wafer is changed according to the position of a semiconductor thin plate. CONSTITUTION:Using the plasma processing device of paralleled-flat-plate type structure wherein the substrate supporting member 2 containing a heating apparatus and the gas feeder 3 are arranged facing each other in a vacuum deaeratable container 1, the feeding quantity of gas is changed by varying the interval between the gas feeding small holes 5', provided facing to the semiconductor wafer 4 and the plasma processing is performed. Hence, the volume of the plasma processing is uniformalized, the variation of the thickness of the deposited thin film and the quantity of etching are eliminated, the characteristics of the semiconductor are uniformalized and the yield rate can be improved as well.
JP5206880A 1980-04-18 1980-04-18 Manufacture of semiconductor device Pending JPS5683033A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5206880A JPS5683033A (en) 1980-04-18 1980-04-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5206880A JPS5683033A (en) 1980-04-18 1980-04-18 Manufacture of semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP16064979A Division JPS6053751B2 (en) 1979-12-10 1979-12-10 plasma processing equipment

Publications (1)

Publication Number Publication Date
JPS5683033A true JPS5683033A (en) 1981-07-07

Family

ID=12904490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5206880A Pending JPS5683033A (en) 1980-04-18 1980-04-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5683033A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5046074A (en) * 1973-08-28 1975-04-24
JPS5458361A (en) * 1977-10-19 1979-05-11 Hitachi Ltd Plasma gas phase processor
JPS5530827A (en) * 1978-08-24 1980-03-04 Nec Kyushu Ltd Plasmaetching device
JPS55166926A (en) * 1979-06-15 1980-12-26 Pioneer Electronic Corp Dry etching apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5046074A (en) * 1973-08-28 1975-04-24
JPS5458361A (en) * 1977-10-19 1979-05-11 Hitachi Ltd Plasma gas phase processor
JPS5530827A (en) * 1978-08-24 1980-03-04 Nec Kyushu Ltd Plasmaetching device
JPS55166926A (en) * 1979-06-15 1980-12-26 Pioneer Electronic Corp Dry etching apparatus

Similar Documents

Publication Publication Date Title
EP0218193A3 (en) Process and apparatus for continuous production of lightweight arrays of photovoltaic cells
IE811017L (en) Chemical vapor deposition of films on silicon wafers
JPS5748226A (en) Plasma processing method and device for the same
JPS55125681A (en) Manufacture of photovoltaic device
JPS5737821A (en) Vapor phase reaction device
JPS5683033A (en) Manufacture of semiconductor device
JPS6412522A (en) Semiconductor crystal epitaxy method
JPS56138921A (en) Method of formation for impurity introduction layer
JPS5756036A (en) Plasma chemical vapor phase reactor
JPS56169116A (en) Manufacture of amorphous silicon film
JPS57100720A (en) Manufacture of amorphous semiconductor film
JPS6477120A (en) Formation of wiring of semiconductor device
JPS53131300A (en) Production of silicon oxide film
JPS5731130A (en) Method and device for plasma chemical vapour deposition
JPS53110378A (en) Plasma carrying device
JPS6484717A (en) Semiconductor thin film vapor growth apparatus
JPS5518077A (en) Device for growing film under gas
JPS6441211A (en) Semiconductor growth device
JPS5678422A (en) Preparation of electrically conductive transparent thin film
JP2562686B2 (en) Plasma processing device
JPS57113214A (en) Manufacture of amorphous semiconductor film
EP0304073A3 (en) Method for manufacturing semiconductor device with schottky electrodes
JPS6411323A (en) Semiconductor manufacturing device
JPS5789217A (en) Manufacturing device of semiconductor
JPS6441212A (en) Semiconductor crystal growth method