JPS5731130A - Method and device for plasma chemical vapour deposition - Google Patents

Method and device for plasma chemical vapour deposition

Info

Publication number
JPS5731130A
JPS5731130A JP10612880A JP10612880A JPS5731130A JP S5731130 A JPS5731130 A JP S5731130A JP 10612880 A JP10612880 A JP 10612880A JP 10612880 A JP10612880 A JP 10612880A JP S5731130 A JPS5731130 A JP S5731130A
Authority
JP
Japan
Prior art keywords
area
electrode
holding disks
films
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10612880A
Other languages
Japanese (ja)
Other versions
JPS6317221B2 (en
Inventor
Seiichi Nagata
Koshiro Mori
Shinichiro Ishihara
Masatoshi Kitagawa
Takashi Hirao
Masaharu Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP10612880A priority Critical patent/JPS5731130A/en
Publication of JPS5731130A publication Critical patent/JPS5731130A/en
Publication of JPS6317221B2 publication Critical patent/JPS6317221B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To improve the productivity of the plasma CVD method by expanding the effective area of a substrate on which thin-films are laminated more than the area of one main surface of a vacuum tank of the device. CONSTITUTION:A plurality of the substates 1 are fast stuck to holding disks 2, which are mutually arranged approximately parallel and temperature thereof is controlled, and the holding disks 2 have structure which can maintain mutual positional relationship constantly as necessary. Sections 3 where keeping the mutual positions fixedly have a large number of through-holes 4 so as not to prevent a flow of a raw material gas. The substrate 1 and the holding disks 2 are used as the first electrodes, and the gas is introduced into a hollow section 7 formed by the second electrode 6, and discharged from a small hole group of an electrode plate 8. When the first electrodes are made negative, the second electrode is made positive and plasma is excited, films by the desired resultant are shaped selectively only on the surfaces of the substrates 1, and the utilization efficiency of the raw material gas is improved. When parameters (h) and (n) (number of sheet) are selected properly, nhL2>>L1L2 can be formed, and the area of laminating per one time can largely be expanded more than the area of the main surface of the vacuum vessel.
JP10612880A 1980-07-31 1980-07-31 Method and device for plasma chemical vapour deposition Granted JPS5731130A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10612880A JPS5731130A (en) 1980-07-31 1980-07-31 Method and device for plasma chemical vapour deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10612880A JPS5731130A (en) 1980-07-31 1980-07-31 Method and device for plasma chemical vapour deposition

Publications (2)

Publication Number Publication Date
JPS5731130A true JPS5731130A (en) 1982-02-19
JPS6317221B2 JPS6317221B2 (en) 1988-04-13

Family

ID=14425772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10612880A Granted JPS5731130A (en) 1980-07-31 1980-07-31 Method and device for plasma chemical vapour deposition

Country Status (1)

Country Link
JP (1) JPS5731130A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5916328A (en) * 1982-07-19 1984-01-27 Semiconductor Energy Lab Co Ltd Plasma vapor reaction device
JPS6287344U (en) * 1985-11-20 1987-06-04
JPH01157520A (en) * 1988-11-18 1989-06-20 Semiconductor Energy Lab Co Ltd Plasma vapor reaction
DE102020112641A1 (en) 2020-05-11 2021-11-11 Hanwha Q Cells Gmbh Holding device and use of the holding device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100337740C (en) * 2004-06-15 2007-09-19 刘文泉 Crystal titanium dioxide light catalyst and synthesis thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5916328A (en) * 1982-07-19 1984-01-27 Semiconductor Energy Lab Co Ltd Plasma vapor reaction device
JPS6287344U (en) * 1985-11-20 1987-06-04
JPH0422349Y2 (en) * 1985-11-20 1992-05-21
JPH01157520A (en) * 1988-11-18 1989-06-20 Semiconductor Energy Lab Co Ltd Plasma vapor reaction
JPH0522376B2 (en) * 1988-11-18 1993-03-29 Handotai Energy Kenkyusho
DE102020112641A1 (en) 2020-05-11 2021-11-11 Hanwha Q Cells Gmbh Holding device and use of the holding device

Also Published As

Publication number Publication date
JPS6317221B2 (en) 1988-04-13

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