JPS5731130A - Method and device for plasma chemical vapour deposition - Google Patents
Method and device for plasma chemical vapour depositionInfo
- Publication number
- JPS5731130A JPS5731130A JP10612880A JP10612880A JPS5731130A JP S5731130 A JPS5731130 A JP S5731130A JP 10612880 A JP10612880 A JP 10612880A JP 10612880 A JP10612880 A JP 10612880A JP S5731130 A JPS5731130 A JP S5731130A
- Authority
- JP
- Japan
- Prior art keywords
- area
- electrode
- holding disks
- films
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To improve the productivity of the plasma CVD method by expanding the effective area of a substrate on which thin-films are laminated more than the area of one main surface of a vacuum tank of the device. CONSTITUTION:A plurality of the substates 1 are fast stuck to holding disks 2, which are mutually arranged approximately parallel and temperature thereof is controlled, and the holding disks 2 have structure which can maintain mutual positional relationship constantly as necessary. Sections 3 where keeping the mutual positions fixedly have a large number of through-holes 4 so as not to prevent a flow of a raw material gas. The substrate 1 and the holding disks 2 are used as the first electrodes, and the gas is introduced into a hollow section 7 formed by the second electrode 6, and discharged from a small hole group of an electrode plate 8. When the first electrodes are made negative, the second electrode is made positive and plasma is excited, films by the desired resultant are shaped selectively only on the surfaces of the substrates 1, and the utilization efficiency of the raw material gas is improved. When parameters (h) and (n) (number of sheet) are selected properly, nhL2>>L1L2 can be formed, and the area of laminating per one time can largely be expanded more than the area of the main surface of the vacuum vessel.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10612880A JPS5731130A (en) | 1980-07-31 | 1980-07-31 | Method and device for plasma chemical vapour deposition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10612880A JPS5731130A (en) | 1980-07-31 | 1980-07-31 | Method and device for plasma chemical vapour deposition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5731130A true JPS5731130A (en) | 1982-02-19 |
JPS6317221B2 JPS6317221B2 (en) | 1988-04-13 |
Family
ID=14425772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10612880A Granted JPS5731130A (en) | 1980-07-31 | 1980-07-31 | Method and device for plasma chemical vapour deposition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5731130A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5916328A (en) * | 1982-07-19 | 1984-01-27 | Semiconductor Energy Lab Co Ltd | Plasma vapor reaction device |
JPS6287344U (en) * | 1985-11-20 | 1987-06-04 | ||
JPH01157520A (en) * | 1988-11-18 | 1989-06-20 | Semiconductor Energy Lab Co Ltd | Plasma vapor reaction |
DE102020112641A1 (en) | 2020-05-11 | 2021-11-11 | Hanwha Q Cells Gmbh | Holding device and use of the holding device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100337740C (en) * | 2004-06-15 | 2007-09-19 | 刘文泉 | Crystal titanium dioxide light catalyst and synthesis thereof |
-
1980
- 1980-07-31 JP JP10612880A patent/JPS5731130A/en active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5916328A (en) * | 1982-07-19 | 1984-01-27 | Semiconductor Energy Lab Co Ltd | Plasma vapor reaction device |
JPS6287344U (en) * | 1985-11-20 | 1987-06-04 | ||
JPH0422349Y2 (en) * | 1985-11-20 | 1992-05-21 | ||
JPH01157520A (en) * | 1988-11-18 | 1989-06-20 | Semiconductor Energy Lab Co Ltd | Plasma vapor reaction |
JPH0522376B2 (en) * | 1988-11-18 | 1993-03-29 | Handotai Energy Kenkyusho | |
DE102020112641A1 (en) | 2020-05-11 | 2021-11-11 | Hanwha Q Cells Gmbh | Holding device and use of the holding device |
Also Published As
Publication number | Publication date |
---|---|
JPS6317221B2 (en) | 1988-04-13 |
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